GaN FET vs. MOSFET: 48 V – 1.8 V DC-DC Conversion
Powering Communications…. Increase Output Power AND Efficiency!
Isolated DC-DC converters are used in many telecom/datacom applications. The continually increasing demand to get more power out of less space is driving demand for faster, more efficient power switches.
Low conduction losses, low switching losses, and low drive power, along with low inductance are the keys to the eGaN® FET’s advantage in Isolated DC-DC converter designs.
eGaN FETs enable:
- Higher Power Density
- Higher Current at High Frequency and High Efficiency
- Higher Duty Cycles in Resonant designs, delivering more power per cycle
DC-DC Convertor Handbook