Power Inverter Applications

Power Inverter Applications

Power Inverter Applications

eGaN® FETs offer significantly lower capacitance and inductance and zero QRR in a smaller device for a given RDS(on) than comparable MOSFETs. This reduces switching losses resulting in higher efficiency and/or higher switching frequency. Photo-Voltaic (PV) inverter size and cost are dominated by thermal management and passive elements used for bulk energy storage and filtering. Using eGaN FETs to increase efficiency and/or increase switching frequency can reduce the size and cost of the system.

Power Inverter Reference Material

Concept for multi-level inverter

  • Multi-level inverter using EPC2010C, 200 V eGaN FETs
  • Inverter efficiency estimated at 98% at 150 kHz
Multi-level Inverter

Recommended Devices for Power Inverter Designs

Part
Number
Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V)
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs)
LGA Package
(mm)
Half-Bridge
Development
Boards
EPC2047 Single 200 10 8.2 2.9 1.8 60 160 4.6 x 1.6 EPC9081
EPC2034 Single 200 10 8.8 3.0 1.8 75 200 4.6 x 2.6 EPC9048
EPC2010C Single 200 25 3.7 1.3 0.7 40 90 3.6 x 1.6 EPC9003C
EPC2019 Single 200 50 1.8 0.60 0.35 18 42 2.8 x 0.95 EPC9014
EPC2012C Single 200 100 1.0 0.3 0.2 10 22 1.7 x 0.9 EPC9004C
EPC2025 Single 300 120 1.8 0.72 0.32 22 20 1.95 x 1.95 EPC9042

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