eGaN® FETs offer significantly lower capacitance and inductance and zero QRR in a smaller device for a given RDS(on) than comparable MOSFETs. This reduces switching losses resulting in higher efficiency and/or higher switching frequency. Photo-Voltaic (PV) inverter size and cost are dominated by thermal management and passive elements used for bulk energy storage and filtering. Using eGaN FETs to increase efficiency and/or increase switching frequency can reduce the size and cost of the system.
Power Inverter Reference Material
Concept for multi-level inverter
- Multi-level inverter using EPC2010C, 200 V eGaN FETs
- Inverter efficiency estimated at 98% at 150 kHz