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Presentations

  

March 24, 2016
Applied Power Electronics Conference
Location: Long Beach, CA

Technical Session: "Envelope Tracking GaN Power Supply for 4G Cell Phone Base Stations"
Speaker: Yuanzhe Zhang, Ph.D., Director of Applications Engineering

This paper introduces an envelope tracking (ET) power supply for 4G cell phone base stations using EPC eGaN® FETs. An analytical model was developed for design optimization and verified by single phase synchronous buck converter using zero-voltage switching (ZVS) technique. The model was then extended to four phases and was used to design a 60 W ET power supply with 20 MHz large signal bandwidth. At 25 MHz per-phase switching frequency, measured static power stage efficiency peaks at 96.5% with 68 W output power delivered from 30 V. Experimental results demonstrate accurate tracking of 20 MHz 7dB PAPR LTE envelope with 92% efficiency, delivering 62 W average power from 30 V.

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March 23, 2016
Applied Power Electronics Conference
Location: Long Beach, CA

Technical Session: “Thermal Evaluation of Chip–Scale Packaged Gallium Nitride Transistors"
Speaker: David Reusch, Ph.D., Executive Director of Applications Engineering

With power converters demanding higher power density, transistors must be accommodated in an ever decreasing board space. Beyond gallium nitride (GaN) based power transistors’ ability to improve electrical efficiency, they must also be more thermally efficient. In this paper we will evaluate the thermal performance of chip-scale packaged enhancement-mode GaN field effect transistors (eGaN® FETs) and compare their in-circuit electrical and thermal performance with state-of-art Si MOSFETs. The paper will conclude with the proposal of a thermal figure of merit for designers to use as a tool to quickly compare the thermal efficiency of device packaging technologies.

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March 22, 2016
Applied Power Electronics Conference
Location: Long Beach, CA

Industry Session: "Introducing eGaN IC Targeting Highly Resonant Wireless Power"
Speaker: Michael de Rooij, Ph.D., Vice President of Applications

EPC has previously demonstrated the ability of eGaN FETs to enable wireless energy transfer in various amplifier topologies. The ZVS class D has shown particular promise in these applications due to its low output impedance and ability to drive wide load impedance ranges. In this article EPC introduces the eGaN IC that was specifically designed to maximize amplifier efficiency in a ZVS class D topology. The new eGaN IC incorporates a half bridge topology and a synchronous bootstrap FET that is used to eliminate gate driver induced reverse recovery losses.

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March 20, 2016
Applied Power Electronics Conference
Location: Long Beach, CA

Professional Education Seminar:"Getting from 48 V to Load Voltage: Improving Low Voltage DC-DC Converter Performance with GaN Transistors"
Speakers: Alex Lidow, Ph.D., CEO and Co-Founder, David Reusch, Ph.D., Executive Director of Applications Engineering, John Glaser, Ph.D., Director of Applications

Gallium Nitride (GaN) power semiconductors are being adopted in an increasing number of power conversion applications. The technology is rapidly developing and product experience in the field is expanding. This tutorial will begin with a discussion of the state-of-the art in GaN technology, including an overview of GaN technology, GaN transistor structures and the latest electrical performance.

The tutorial will continue with design basics fundamental to GaN transistors including drivers, layout, paralleling, dead-time management, and thermal considerations. Following the design basics will be design examples with a focus on 48 VIN to 1 VOUT network and telecom power supplies. Different architectures will be compared and the benefits of GaN transistors will be quantified over Si MOSFETs for various approaches to get 48 VIN to load.

The tutorial concludes with a look into future of this relatively young technology and its potential to improve performance in existing applications and enable new applications not possible with aging silicon MOSFETs. Beyond the discrete transistor, the extension of GaN technology to fully integrated circuits will be discussed, furthering the potential of GaN to raise the bar in power conversion performance.

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September 29, 2015
Darnell’s Energy Summit
Location: Los Angeles, CA

Plenary Session: "The GaN Effect – How GaN is Changing the Way We Live"
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder

Enhancement-mode gallium nitride transistors have been commercially available for over six years and is leading to our elimination of battery chargers and power cords. GaN technology is enabling higher speed wireless data, better cars and superior health care. In this talk we will review the state-of-the-art applications for GaN power devices and present our view of the roadmap for this technology.

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September 20 – September 24, 2015
IEEE Energy Conversion Congress & Expo
Location: Montreal, Quebec

"Improving High Frequency DC-DC Converter Performance with Monolithic Half Bridge GaN ICs"
Speaker: David Reusch, Ph.D., Executive Director of Applications

The rapid maturation of GaN power transistors continues to enable new capabilities in high frequency power conversion. In this paper we will evaluate one of the latest technological advancements in eGaN® FETs, monolithic integration. The benefits of monolithic integration for GaN power transistors with regards to parasitic reduction, die size optimization, and thermal performance will be discussed. Experimental results for a 12 VIN to 1 VOUT buck converter operating at a switching frequency of 1 MHz and up to 40 A of output current will be demonstrated with 30 V eGaN monolithic half bridge (HB) ICs. For an 80 V eGaN monolithic HB IC, 48 VIN to 1 VOUT and 1.8 VOUT point-of-load (POL) converters will be demonstrated at switching frequencies up to 500 kHz and output currents up to 30 A.

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September 6 – September 9, 2015
IEEE 82nd Vehicular Technology Conference (VTC2015)
Location: Boston, Massachusetts

"Automotive Compatible Single Amplifier Multi-mode Wireless Power for Mobile Devices"
Speaker: Ivan Chan, Field Applications Engineer

The proliferation of wireless power products for mobile applications is leading to consumer confusion and hindering adoption of this technology. A simple eGaN® FET based single amplifier topology capable of operating to all of the mobile device wireless power standards is presented. The high reliability of eGaN FETs further make this solution suitable for automotive applications. This paper presents the proposed topology with experimental verification that demonstrates excellent performance at both low frequencies (Qi & PMA standards) and high frequency (A4WP standard).

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September 1, 2015
IIC Power Management and Power Semiconductor Conference
Location: Shenzhen, China

"Performance Comparison for A4WP Class-3 Wireless Power Compliance between eGaN® FET and MOSFET in a ZVS Class D Amplifier"
Speaker: Larry Chen, FAE Manager, Efficient Power Conversion Corporation

eGaN FETs have repeatedly demonstrated higher efficiency than MOSFETs in wireless power transfer amplifiers when operated over a wide impedance range using a ZVS Class D amplifier. In this presentation, we will examine a method to further improve the performance of eGaN FETs by replacing the bootstrap diode of the high side gate driver with an eGaN FET that is driven synchronously with the lower device gate. The integrated bootstrap diode of the gate driver has reverse recovery losses (PQRR), as it is very difficult to monolithically integrate a Schottky diode on the same wafer as the gate driver circuit. This limits high frequency performance of the amplifier because the frequency dependent reverse recovery losses are dissipated in the upper device. The technique that replaces the internal bootstrap diode of the gate driver will be implemented and evaluated using an eGaN FET based ZVS Class D amplifier and compared to an equivalent MOSFET version operated over a wide load impedance range of ±35j Ω to the A4WP Class-3 drive specifications. The results show that the eGaN FET based amplifier losses were reduced between 15% and 48%, and it could operate over a wider load impedance range, by as much as 20j Ω, than the comparable best-in-class MOSFET amplifier.

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June 24, 2015 – June 26, 2015
PCIM Asia 2015
Location: Shanghai, China

"Performance Comparison for A4WP Class-3 Wireless Power Compliance between eGaN® FET and MOSFET in a Class E Amplifier"
Speaker: Michael de Rooij, PhD., Senior Executive Director of Applications

eGaN FETs have previously demonstrated higher efficiency in wireless power transfer solutions when operating on-resonance using a Class E amplifier. [1] In this article we further examine how eGaN FETs continue to outperform MOSFETs in the Class E amplifier when operated over a large reflected load impedance range. Large reflected impedances are part of the requirements for A4WP compliance that address convenience of use for wireless power transfer solutions. The total imaginary component for A4WP class-3 compliance is very wide and requires very high voltages at the extremes to yield the currents required. In this this evaluation, the imaginary component variation will be reduced to 0j Ω though -30j Ω which allows for a 3-bit discrete adaptive matching retuning circuit to control the entire A4WP compliance range of +10jΩ through -150jΩ. The performance will further be compared to that of an equivalent MOSFET version of the amplifier.

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May 21, 2015
PCIM EU
Location: Nuremberg, Germany

“Performance Comparison for A4WP Class-3 Wireless Power Compliance between eGaN® FET and MOSFET in a ZVS Class D Amplifier”
Speaker: Michael de Rooij, Ph.D.; Executive Director of Applications, Efficient Power Conversion

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May 20, 2015
PCIM EU
Location: Nuremberg, Germany

“Enhancement-Mode Gallium Nitride Transistors in Automotive Applications”
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

Enhancement-mode gallium nitride transistors have been in production for over 5 years. As the technology has matured it has been adopted into a number of automotive applications such as cockpit wireless charging, LiDAR sensing, and EV charging with many more to follow. In this paper, we will discuss the current and future applications of GaN technology in these automotive applications, as well as motor drives for electric and hybrid vehicles. We will also discuss the timing and the value added by GaN in each application.

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May 20, 2015
PCIM EU
Location: Nuremberg, Germany

“High Power Fully Regulated Eighth-Brick DC-DC Converter with GaN FETs”
Speaker: John Glaser, Ph.D., Director of Applications, Efficient Power Conversion

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May 19, 2015
PCIM EU
Location: Nuremberg, Germany

“Monolithic GaN Integration for Higher DC-DC Efficiency and Power Density”
Speaker: David Reusch, Ph.D., Director of Applications, Efficient Power Conversion

Power converters are constantly trending towards higher output power, higher efficiency, and higher power density. To provide improved performance better power devices are required. For silicon (Si) power devices, the gains in performance have slowed as the technology has matured and approaches its theoretical limits[1]. Gallium nitride (GaN) devices have emerged as a possible replacement for silicon devices in various power conversion applications and as an enabler of new applications not previously possible [1]-[4]. In this paper we will discuss the latest eGaN®FETs developments, including a major improvement with the latest generation of discrete devices and introduce a new family of monolithic half bridge ICs offering unmatched high frequency performance. These new families of eGaN FETs are widening the performance gap with the aging power MOSFET in high frequency power conversion by providing significant gains in key switching figures of merit, continued reductions of performance limiting in-circuit parasitics, and improved thermal performance.

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May 11, 2015 - May 13, 2015
ISPSD 2015
Location: Hong Kong

Plenary Session: “GaN Transistors – Giving New Life to Moore’s Law”
Plenary Speaker: Alex Lidow, Ph.D; CEO, Efficient Power Conversion

Enhancement-mode gallium nitride transistors have been commercially available for over five years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this presentation, we will discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore’s Law is alive and well in the world of power semiconductor technology. We will also enumerate the advantages of GaN over silicon in terms of performance, cost, and reliability.

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March 15, 2015 - March 19, 2015
APEC 2015
Location: Charlotte, NC

“Low Voltage GaN – Discussion of Initial Application Adoption and State of Reliability Achievement”
Industry Session Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

This presentation will show the benefits derived from the latest generation GaN transistors in emerging applications such as Class-D audio, LiDAR, wireless power transmission, and RF envelope tracking. All these cases support the rapidly evolving trend of conversion from power MOSFETs and LDMOS to gallium nitride transistors. We will also show the latest reliability results from both qualification testing and accelerated life testing.

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“The ZVS Voltage Mode Class D Amplifier, an eGaN® FET-Enabled Topology for Highly Resonant Wireless Energy Transfer”
Technical Session Speaker: Michael de Rooij, Ph.D., Executive Director of Applications Engineering

The popularity of highly resonant, loosely coupled, wireless energy transfer systems operating at 6.78 MHz has increased dramatically over the last few years [1, 2, 3, 4]. In this paper we present the zero voltage switching (ZVS) voltage mode class D amplifier topology [5, 6, 7] and evaluate its performance using eGaN FETs and MOSFETs. The comparison will look at peak power performance, load variation performance, load regulation performance, the impact of foreign metal objects on device performance, and how to tune the source coil to ensure optimal performance over the entire operating load range. The comparison will be experimentally verified using the 2 different coil sets namely; A4WP Class 3 Source with Category 3 Device coil set and a WiTricity Coil set [8]. The paper will conclude by summarizing the supporting experimental evidence that shows that the ZVS class D is superior to all other topologies for wireless energy transfer.

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“Effectively Paralleling Gallium Nitride Transistors for High Current and High Frequency Applications”
Speaker: David Reusch, Ph.D., Director of Applications

Gallium nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and switching speeds beyond the capability of silicon (Si) power MOSFETs. In this paper, we will discuss paralleling high speed GaN transistors in applications requiring higher output current. This work will discuss the impact of in-circuit parasitics on performance and propose printed circuit board (PCB) layout methods to improve parallel performance of high speed GaN transistors. Four parallel half bridges in an optimized layout operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A single phase buck converter achieving efficiencies above 96.5% from 35% to 100% load will be demonstrated. Also in this paper, we will discuss the latest eGaN® FET developments including the fourth generation devices designed for higher current handling capability.

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March 11, 2015
Compound Semiconductor International Conference
Location: Munich, Germany

“Ditching the package to drive down GaN transistor costs”
Keynote Speaker: Alex Lidow, Ph.D; , CEO and co-founder

In the world of switching power transistors, the package surrounding the semiconductor has always reduced the performance and increased the cost of the device. Generalizing customers’ dissatisfaction with transistor packaging, there are five key complaints: (1) packages take up too much space, (2) packages add too much electrical resistance, (3) packages add too much inductance, (4) packages add too much thermal resistance, and (5) packages add too much cost. In this presentation we will discuss the reasons why everyone should consider ditching transistors in a package and convert to chip scale LGA gallium nitride transistors that address each of the key complaints.

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September 23, 2014 - September 26, 2014
Darnell Energy Summit
Location: Richmond, VA

Plenary Session: “GaN Transistors – Giving New Life to Moore’s Law”
Speaker: Alex Lidow, Ph.D; CEO, Efficient Power Conversion Corporation

Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this presentation, we will discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore’s Law is alive and well in the world of power semiconductor technology. We will also show the benefits derived from the latest generation eGaN® FETs in new emerging applications such as Class – D audio, LiDAR, wireless power transmission, and RF envelope tracking. All cases support the rapidly evolving trend of conversion from power MOSFETs and LDMOS to gallium nitride transistors.

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Educational Seminar: “GaN Transistors for Efficient Power Conversion”
Speakers: Alex Lidow, Ph.D; CEO, Efficient Power Conversion Corporation
David Reusch, Ph.D.; Director of Applications, Efficient Power Conversion

Gallium Nitride is beginning to be broadly accepted in many power conversion and RF applications. The technology is rapidly developing and product experience in the field is expanding. This seminar will begin with Alex Lidow explaining how GaN High Electron Mobility Transistors (HEMT) work followed by an update on the state-of-the art in the technology from the many new entrants into this field. Included in this update will be the latest manufacturing technologies, cost requirements and comparisons, reliability data and acceleration factors.

David Reusch will follow with a tutorial on how to use these high performance devices. They will start with drivers, layout, and thermal considerations for high performance and high frequency power conversion, and then move to several applications examples including high frequency Envelope Tracking (ET), Class-D Audio, RF amplifiers, DC-DC converters, and Wireless Power Transmission.

The seminar concludes with a look into future of the relatively young technology.

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Technical Session: “Pushing the State of the Art in High Frequency Hard-Switching Converters using eGaN®FETs”
Speaker: Johan Strydom, Ph.D.; V.P. of Applications Engineering

With hard-switching times in the sub nano-second range, eGaN FETs are expanding the power designer’s useable switching frequency range into the tens of megahertz. Slew rates of up to 75V/ns push the system performance limitations outside of the power devices and into the surrounding components and layout parasitics. In this presentation we will discuss some of these limitations, while demonstrating the ability of the latest generation of gallium nitride transistors to address high frequency hard-switching power applications, such as RF envelope tracking, at efficiencies not currently realizable using traditional silicon MOSFETs.

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Technical Session: “Performance comparison using eGaN®FETs in 6.78 MHz class E and ZVS class D Wireless Power Transfer”
Speaker: Michael de Rooij, Ph.D.; Executive Director of Applications Engineering

The popularity of highly resonant wireless power transfer, based on the A4WP standard, operating at 6.78 MHz has increased dramatically over the last few years. In this paper we compare two popular topology candidates, the single ended class E and the ZVS class D when realized using eGaN FETs. The comparison will look at peak power performance, load variation performance, load regulation performance and impact of foreign metal objects on the performance of the devices. The comparison will be experimentally verified using the same Source and Device coil set.

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Technical Session: “Advances in DC-DC converters with eGaN® FETs”
Speaker: David Reusch, Ph.D.; Director of Applications Engineering, Efficient Power Conversion

Continuing to raise the bar for power conversion, eGaN FETs are steadily improving performance in high power density and high current applications. In this presentation we will discuss the latest developments in non-isolated and isolated DC-DC converters with eGaN FETs, including techniques for effectively paralleling GaN devices in high current applications, the development of high power density GaN building blocks, and major improvements in eGaN FETs with the latest generation devices. This new family of eGaN FETs is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the aging power MOSFET in high frequency power conversion.

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September 4, 2014
IIC China Power Management Conference
Location: Shenzhen, China

"Power Management & Power Semiconductor: Generation 4 eGaN® FETs"
Speaker: Peter Cheng, Asia Pac FAE Director

In this paper we will discuss the latest developments in DC-DC converters with eGaN FETs, including a major improvement in eGaN FETs with the latest generation devices. This new family of eGaN FETs is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the aging power MOSFET in high frequency power conversion. Our demonstrations will include a 12 V to 1.2 V, 40 A POL converter operating at a switching frequency of 1 MHz achieving efficiencies above 91.5%, and a 48 V to 12 V, 30 A non-isolated DC-DC intermediate bus converter operating at a switching frequency of 300 kHz achieving efficiencies above 98%.

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September 3, 2014
IEEE PELS Webinar
Location: IEEE Webinar Series

"Gallium Nitride FETs for Envelope Tracking Buck Converters"
Speaker: Johan Strydom, Ph.D.; Vice President, Applications

Discrete GaN power devices offer superior hard-switching performance over MOSFETs and are crucial for the development of switching converters for Envelope Tracking, if the system bandwidth requirements are to be met. The system performance is greatly impacted by aspects outside the active power devices, such as high-speed gate drivers and printed circuit board (PCB) layout. In this seminar, the latest family of high frequency enhancement mode gallium nitride power transistors on silicon (eGaN® FETs) is presented in a few multi-megahertz buck converters. The different system level parasitics are discussed and their impact evaluated based the experimental results.

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August 26, 2014
Wireless Power World 2014
Location: Shanghai, China

"eGaN® FET based Wireless Energy Transfer using a New Zero Voltage Switching Class-D Topology"
Speaker: Johan Strydom, Ph.D.; Vice President, Applications

The popularity of highly resonant, loosely coupled, wireless energy transfer systems operating at 6.78 MHz has increased dramatically over the last few years. In this presentation a performance comparison between the class E and a new Zero Voltage Switching (ZVS) voltage mode class D amplifier topologies is presented and is realized using both MOSFETs and eGaN FETs for a given coil system. The comparison will look at peak power performance, load variation performance, load regulation performance, and the impact of foreign metal objects on the performance of the devices. The results are expanded to show comparative A4WP Class 3 efficiency results using a CAT3 load coil.

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August 7, 2014
PSMA Webinar
Location: PSMA Roadmap Presentation

"GaN Transistors – Giving New Life to Moore’s Law "
Speakers: Alex Lidow, Ph.D., CEO and co-founder, David Reusch, Ph.D., Director of Applications

Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this presentation, we will discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore’s Law is alive and well in the world of power semiconductor technology. We will also show the benefits derived from the latest generation eGaN® FETs in new emerging applications such as Class-D audio, LiDAR, wireless power transmission, and RF envelope tracking. All cases support the rapidly evolving trend of conversion from power MOSFETs and LDMOS to gallium nitride transistors.

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June 17, 2014
PCIM Asia
Location: Shanghai, China

"Performance Evaluation of eGaN® FETs in Low Power High Frequency Class E Wireless Energy Converter"
Speaker: Michael de Rooij; Executive Director of Application Engineering

EPC has previously demonstrated the ability of eGaN FETs to enable wireless energy transfer using a class D system with efficiency over 70%. EPC further demonstrates eGaN FETs used in class E wireless system that showed a 20 percentage point improvement in efficiency over the class D using the same coils and device load. The design will also operate with loosely coupled coils and will operate in the 6.78 MHz ISM band.

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June 1, 2014 - Friday, June 6, 2014
International Microwave Symposium
Location: Tampa Bay, Florida

"GaN-based Power Supplies and Power Supply Modulators for Efficient Powering of RF PAs "
Speaker: Michael de Rooij; Executive Director of Application Engineering

Enhancement mode Gallium Nitride FETs are normally-off switches and are rapidly replacing Silicon power MOSFETS in many power management applications. The fast switching characteristics of these wide band-gap (WBG) materials, combined with the absence of reverse recovery characteristics of these switches enable higher efficiency and power density in switching DC-DC power supplies.

This presentation will introduce the characteristics of eGaN® FETs and how they compare with today’s Silicon power MOSFETs for implementing static switching power supplies. Emphasis will be placed on the implementation of eGaN DC-DC power converters, highlighting the challenges associated with designing envelope tracking and other applications in RF power amplifiers loads.

The discussion will detail best-practice design flow, device sizing considerations, and accurate prediction of loading requirements. At the end of the presentation, the audience will have a broad knowledge of the benefits of eGaN FETs and the key design parameters to achieve best performance when used in power management circuits, particularly for powering RF amplifiers.

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May 20, 2014 – Thursday, May 22, 2014
PCIM Europe
Location: Nuremberg, Germany

"Multi Megahertz Buck Converters using eGaN® FETs for Envelope Tracking"
Speaker: Johan Strydom, Ph.D.; Vice President of Applications, Efficient Power Conversion Corporation

With discrete GaN devices capable of switching at slew rates up to 70V/ns, the system performance is greatly impacted by aspects outside the active power devices, such as high speed gate drivers and printed circuit board (PCB) layout. In this paper, the latest family of high frequency enhancement mode gallium nitride power transistors (eGaN® FETs) is presented for use in multi megahertz buck converters. These devices were designed to address high-frequency hard-switching power applications not practical with discrete Si MOSFETs, thus enabling applications such as envelope tracking that require high-frequency at higher voltages. A number of 10 MHz buck converters are presented with voltages up to 42V and output power up to 40W. In this paper, the limitation to switching at these levels using discrete device are also discussed.

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"eGaN® FET based Wireless Energy Transfer Topology Performance Comparisons"
Speaker: Michael de Rooij, Ph.D.; Executive Director of Applications, Efficient Power Conversion Corporation

eGaN FETs have previously been demonstrated in a classic voltage mode class D wireless energy transfer system that had a peak efficiency over 70% and provide a 4% higher in total efficiency than a comparable MOSFET version. In this article eGaN FETs are again employed and compared in highly resonant wireless energy transfer where various topologies, such as the current mode class D, single ended class E, and a novel high efficiency voltage mode class D. The comparisons will be based on efficiency and sensitivity to load and coil coupling variations. Each of the topologies will be experimentally tested based on using the same source and device coil set with the same device rectifier. The experimental units will operate with loosely coupled coils at 6.78 MHz (ISM band) and deliver between 15 W and 30 W (depending on topology). The design of the amplifiers will look at ways that the device parameters, such as COSS can be absorbed into the coil or matching network.

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"Improving Performance of High Speed GaN Transistors Operating in Parallel for High Current Applications"
Speaker: David Reusch, Ph.D.; Director of Applications, Efficient Power Conversion Corporation

Gallium nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and switching speeds beyond the capability of silicon power MOSFETs. In this paper, we will discuss paralleling high speed GaN devices in applications requiring higher output current. This work will discuss the impact of in-circuit parasitics on performance and propose PCB layout methods to improve parallel performance of high speed GaN transistors. A 48V to 12V, 480W, 40A buck converter operating at a switching frequency of 300kHz in an optimized parallel layout achieving efficiencies above 96.5% from 35% to 100% load is demonstrated.

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May 27, 2014
ECTC 2014
Location: Lake Buena Vista, FL

"Wireless Energy Transfer – Technology Drivers"
Speaker: Michael de Rooij, Ph.D.; Executive Director of Applications

Special Session on Wireless Power Transfer Systems

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April 10, 2014
International Workshop on Wide Bandgap Semiconductors
Location: Hsinchu, Taiwan

"Crushing Silicon with GaN"
Speaker: Alex Lidow, Ph.D.; CEO, Efficient Power Conversion Corporation

It has been four years since the first gallium nitride transistors were delivered as power MOSFET replacements in a commercial DC-¬DC application. Since that time there has been major interest, and rapid progress in the development and commercialization of this new technology. There have been many product launches, and even more product pre-¬launches. Silicon is in retreat. In this speech we will give an update on GaN technology, the key -- and surprising -- new applications, the latest products on the market, the latest road maps into the future, and the relative competitive position vis-a-vis the power MOSFET and SiC.

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April 3, 2014
GOMAC Tech
Location: Charleston, South Carolina

"Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FETs for High Frequency DC-DC Conversion"
Speaker: Alex Lidow, Ph.D.; CEO, Efficient Power Conversion Corporation

Enhancement-mode GaN-on-Si (eGaN) FETs have showed superior performance and also demonstrated their ability to operate reliably under harsh environmental conditions and high radiation conditions. In this paper we present results characterizing a newly released family of enhancement mode GaN HEMT transistors designed for higher frequency operation. The stability of these devices under radiation exposure as well as showing their capability in high-performance DC-DC converters operating at 10 MHz will be presented.

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March 20, 2014
Applied Power Electronics Conference and Exposition
Location: Fort Worth, TX

"GaN: Raising the Bar for Power Conversion Performance"
Speaker: David Reusch, Ph.D.; Director of Applications, Efficient Power Conversion Corporation

Gallium nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and switching speeds beyond the capability of silicon (Si) power MOSFETs. We will demonstrate the ability of enhancement mode GaN transistors (eGaN®FETs) to improve performance in a variety applications, ranging from 2 A point of load (POL) converters operating at 10MHz to 40 A server power supplies operating at 300kHz. A new family of EPC8000 eGaN FETs, targeting an order of magnitude increase in switching frequency will also be introduced, further raising the bar for high frequency power conversion.

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March 20, 2014
Applied Power Electronics Conference and Exposition
Location: Fort Worth, TX

"Design and Evaluation of a 10 MHz Gallium Nitride Based 42 V DC-DC Converter"
Speaker: Johan Strydom, Ph.D.; Vice President of Applications, Efficient Power Conversion Corporation

Gallium nitride (GaN) based power devices are becoming common place due to their ability to achieve higher efficiencies and higher switching frequencies than is possible with silicon (Si) power MOSFETs. With discrete eGaN®FETs capable of switching at slew rates beyond 40V/ns, the system performance is greatly impacted by aspects outside the power devices, such as high speed gate drivers and printed circuit board (PCB) layout. In this paper, these limitations are identified and discussed while demonstrating the ability of new family of high frequency enhancement mode gallium nitride power transistors. These devices were designed to address high frequency hard-switching power applications not practical with Si MOSFETs, thus enabling applications requiring high frequency at higher voltages. As demonstrator a 42 V, 10 MHz, 40 W buck converter suitable for envelope tracking is presented showing a peak efficiency of over 89%.

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March 19, 2014
Applied Power Electronics Conference and Exposition
Location: Fort Worth, TX

"Evaluation of Gallium Nitride Transistors in High Frequency Resonant and Soft-Switching DC-DC Converters"
Speaker: David Reusch, Ph.D.; Director of Applications, Efficient Power Conversion Corporation

The emergence of gallium nitride (GaN) based power devices offers the potential to achieve higher efficiencies and higher switching frequencies than possible with aging silicon (Si) power MOSFETs. In this paper, we will demonstrate the ability of gallium nitride transistors to improve efficiency and output power density in resonant and soft-switching applications. A figure of merit is proposed to compare the critical device parameters that influence the in-circuit performance of resonant and soft-switching applications and GaN and Si technologies are compared. To experimentally verify the benefits of replacing Si MOSFETs with enhancement mode GaN transistors (eGaN®FETs) in a high frequency resonant converter, 48 V to 12 V unregulated isolated bus converter prototypes operating at a switching frequency of 1.2 MHz and an output power of 400W are compared with Si and GaN power devices.

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March 18, 2014
Electronica China – International Power Electronics Conference
Location: Shanghai, China

"Improving Wireless Energy Transfer Performance with eGaN® FET-based Converter"
Speaker: Peter Cheng; Field Applications Engineering, Efficient Power Conversion Corporation

Gallium nitride (GaN) based power devices have emerged as a higher efficiency replacement for the aging silicon (Si) power MOSFETs, enabling the development of emerging applications such as wireless power transfer.

In the application of wireless energy transfer, an eGaN FET based voltage mode class D system was previously demonstrated with peak efficiency over 70% -- this is 4% higher efficiency in total efficiency as compared to an equivalent MOSFET. In addition, eGaN FETs in a class E wireless energy transfer system shows a 20 percentage point improvement in peak efficiency over the class D version when using the same coils and device load. The latest work will demonstrate a new Class E design that can deliver up to 30 W and operates with loosely coupled coils in the 6.78 MHz ISM band. Many of the desirable features of eGaN FETs such as low package parasitic inductance allow the class E system to operate at optimum conversion efficiency.

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March 5, 2014
IEEE PELS 2014 Webinar
Location: IEEE Webinar Series

"GaN is Crushing Silicon...and Let Me Tell You How"
EPC Speakers: Alex Lidow, Ph.D.; CEO and David Reusch, Ph.D.; Director of Applications

Gallium Nitride is beginning to be broadly accepted in many power conversion and RF applications. The technology is rapidly developing and product experience in the field is expanding. This seminar will begin with an explanation of how GaN High Electron Mobility Transistors (HEMT) work, followed by an update on the state-of-the art in the technology.

Following this update, the presentation will move to several application examples including high frequency Envelope Tracking (ET), resonant DC-DC conversion, and Wireless Power Transmission.

The seminar concludes with a look into future of the relatively young technology.

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October 28, 2013
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications
Location: Columbus, OH

"Enhancement Mode GaN on Silicon Enables Increased Performance and New Applications"
Speaker: David Reusch, Ph.D.; Director of Applications, Efficient Power Conversion Corporation

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October 11, 2013
Google + Hangout

"Digi-Key and EPC Google Hangout"

EPC and Digi-Key will be hanging out on Friday, October 11th, at 10:00am PST. Digi-Key's Anissa Lauer will be joined by Alex Lidow, Michael de Rooij & Renee Yawger from EPC to discuss the evolution of semiconductor materials. EPC will be presenting their state-of the-art enhancement mode gallium nitride power transistor technology and how to get started designing with these devices today, so you can capture the superior performance these transistors can deliver in your system.

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October 1, 2013
IMAPS 2013
Location: Orlando, FL

"Improving System Performance with eGaN® FETs in DC-DC Applications"
Speaker: David Reusch, Ph.D.; Director of Applications, Efficient Power Conversion Corporation

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June 18 – 20, 2013
PCIM Asia
Location: Shanghai, China

"Improvements in Hard- and Soft-Switching Applications with GaN Transistors"
Speaker: Johan Strydom, PhD; Vice President of Applications, Efficient Power Conversion Corporation

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May 13 – 16, 2013
Compound Semiconductor Manufacturing Technology Conference
Location: New Orleans, LA

SESSION 9a: WBG Power Devices
"Emerging Applications for GaN Transistors"
Speaker: David Reusch, PhD; Director of Applications, Efficient Power Conversion Corporation

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Rump Session B: GaN wants to be a Billionaire? Who will call to assist the answer?
Participant: David Reusch, PhD; Director of Applications, Efficient Power Conversion Corporation

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May 16, 2013
PCIM Europe
Location: Nuremberg, Germany

"GaN on Silicon Technology, Devices and Applications"
Speaker: Alex Lidow, PhD; CEO of Efficient Power Conversion Corporation

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April 23, 2013
Designwest
Location: San Jose, CA

"Emerging Applications for GaN Transistors"
Speaker: Alex Lidow, PhD; CEO of Efficient Power Conversion Corporation

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April 8, 2013
2013 CPES Conference Program
Location: Blacksburg, VA

"GaN Transistors – Successes and Challenges Ahead"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation

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March 17 – 21, 2013
APEC
Location: Long Beach, CA

"Design of a High Frequency, Low Loss eGaN Converter with Reduced Parasitic Inductances"
Speaker: David Reusch, PhD; Director of Applications Engineering, Efficient Power Conversion Corporation

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"eGaN FETs Enable Low Power High Frequency Wireless Energy Converters"
Speaker: Michael de Rooij, PhD; Senior Director of Applications, Efficient Power Conversion Corporation

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"Using eGaN FETs for Envelope Tracking"
Speaker: Johan Strydom, PhD; Vice President of Applications, Efficient Power Conversion Corporation

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"eGaN FET Based High Frequency Resonant Converter"
Speaker: David Reusch, PhD; Director of Applications, Efficient Power Conversion Corporation

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"GaN Transistors for Efficient Power Conversion"
Speakers: Alex Lidow, PhD; CEO, Efficient Power Conversion Corporation, Michael de Rooij, PhD; Senior Director of Applications, Efficient Power Conversion Corporation, Johan Strydom, PhD; Vice President of Applications, Efficient Power Conversion Corporation, David Reusch, PhD; Director of Applications Engineering, Efficient Power Conversion Corporation

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"Session 2: Wide band-gap semiconductors - Prime time or promises?"
Chair: Kevin Parmenter, Excelsys Technologies Ltd.
Panelists: Tim Mcdonald, International Rectifier
Dr. Alex Lidow, CEO of EPC Efficient Power Conversion
Dr. Dan Kinser, CTO Fairchild
Dr. Primit Parkh, CEO Transphorm
Dr. John Palmour, CTO of CREE
Greg J. Miller Sr., Vice President - Applications Engineering at Sarda Technologies, Inc.

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March 13, 2013
GOMAC Tech Conference
Location: Las Vegas, Nevada

"Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FETs in DC-DC Converters"
Speakers: Johan Strydom, PhD; VP Applications Engineering, Efficient Power Conversion Corporation, Tom Gati, Microsemi Corporation

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November 16, 2012
National Taiwan University Forum
Location: Taiwan

"Emerging Applications for GaN Transistors"
Speaker: Alex Lidow, PhD; CEO, Efficient Power Conversion Corporation

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"How to Use eGaN FETs"
Speaker: Peter Cheng; Field Applications Engineering Manager, Efficient Power Conversion

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October 25, 2012
PSMA Power Technology Roadmap Webinar

"Silicon is in Retreat -- GaN has Become Mainstream"
Speaker: Alex Lidow, PhD; CEO, Efficient Power Conversion Corporation

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October 7 – 12, 2012
ECS – PriME 2012

"eGaN FETs in Low Power Wireless Energy Converters"
Speaker: Michael de Rooij, PhD; Director Applications Engineering, Efficient Power Conversion Corporation
Location: Honolulu, HI

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September 19 – 21, 2012
Darnell’s Power Forum
Location: San Jose, CA

"Emerging Applications for GaN Transistors"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation

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"Enabling Envelope Tracking through GaN Transistors"
Speaker: Johan Strydom, PhD; VP Applications Engineering, Efficient Power Conversion Corporation

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"Isolated DC-DC Converters with eGaN® FETs"
Speaker: Johan Strydom, PhD; VP Applications Engineering, Efficient Power Conversion Corporation

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"Putting GaN to Work in your Power Supply"
Speaker: Robert V. White; Embedded Power Labs

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Round Table Discussion
"After we reach maximum efficiency - What's next?"
EPC Participant: Alex Lidow, PhD; CEO, Efficient Power Conversion

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May 22, 2012
Credit Suisse Private Semi Conference

"Gallium Nitride Transistors for Efficient Power Conversion"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: San Francisco, CA

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April 23, 2012
CS Mantech

"Gallium Nitride Transistors for Efficient Power Conversion"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Boston, MA

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March 22, 2012
GOMAC Tech Conference

"Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FET Characteristics"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Las Vegas, Nevada

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February 23, 2012
IIC China Conference

"eGaN FETs for Efficient Power Conversion"
Speaker: Alex Lidow, PhD; CEO, Efficient Power Conversion Corporation
Location: Shenzhen, China

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February 9, 2012
Applied Power Electronics Conference

"Paralleling eGaN FETs"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Orlando, Florida

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February 5, 2012
Applied Power Electronics Conference

"Putting GaN To Work In Your Power Supply"
Speaker: Robert V. White; Embedded Power Labs, Highland Ranch, CO
Location: Orlando, Florida

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December 1, 2011
2011 EDN China Innovation Conference and Awards

"eGaN® FETs in High Performance DC-DC Conversion"
Speaker: Stephen Tsang; VP Sales - Asia, Efficient Power Conversion Corporation
Location: Shanghai, China

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October 11, 2011
IEEE Bipolar / BiCMOS Circuits and Technology Meeting

"Is it the End of the Road for Silicon in Power Conversion?"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Atlanta, Georgia

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October 13, 2011
ECS Meeting and Electrochemical Energy Summit

"eGaN® FETs Compared with Silicon MOSFETs in High Performance Power Conversion Systems"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Boston, Massachusetts

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September 26, 2011
Darnell’s Power Forum

"eGaN® FETs in High Frequency Power Conversion"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: San Jose, CA

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September 17 – 22, 2011
ECCE 2011: IEEE Energy Conversion Congress & Exposition

"GaN as a Displacement Technology for Silicon in Power Management"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Phoenix, AZ

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June 22, 2011
PCIM Asia 2011: Power Electronics/Intelligent Motion/Power Quality

"Driving eGaN® FETs in High Performance Power Conversion Systems"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Shanghai, China

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May 11, 2011
IBM Power Symposium

"High Step Down Ratio Buck Converters with eGaN® FETs"
Speakers: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Johan Strydom PhD; Vice President Applications Engineering, Efficient Power Conversion
Location: Raleigh, NC

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March 24, 2011
GOMAC Tech Conference

"Enhancement Mode Gallium Nitride (eGaN®) Characteristics under Long Term Stress"
Alexander Lidow; CEO, Efficient Power Conversion Corporation
J. Brandon Witcher; Senior Member of the Technical Staff, Sandia National Laboratories
Ken Smalley; Product Engineer, Microsemi Corporation

Enhancement mode HEMT transistors built with Gallium-Nitride-on-silicon (eGaN) have been in the commercial marketplace for more than a year as a replacement for silicon power MOSFETs. Superior conductivity and switching characteristics allow designers to greatly reduce system power losses, size, weight, and cost. Military and space applications would benefit from using eGaN transistors, but the parts would be required to operate reliably under harsh environmental conditions. In this paper we present results demonstrating the stability of these devices at temperature and under radiation exposure.

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October 12, 2010
GOMAC Tech Conference

"Is it the End of the Road for Silicon in Power Management?"
Alexander Lidow; CEO, Efficient Power Conversion Corporation

Dr. Alex Lidow, CEO of Efficient Power Conversion, presented "Is it the End of the Road for Silicon in Power Management?" at the IEEE SCV Electron Devices Society (EDS) on October 12th, 2010.

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