EPC’s latest generation eGaN technology cuts the size of our devices in half but triples their performance. This reduction in cost and improvement in performance creates a “virtuous cycle” that is expanding the gap in both performance and cost between eGaN® FETs and ICs and the aging silicon power MOSFET. The thesis for EPC was, and still is, to develop products that are both higher performance AND lower cost than comparable silicon. Our first generation, launched in 2010, fulfilled the first half of this promise. By the fourth generation, we crossed the cost threshold and there is no looking back. Now, with this fifth generation, we open an even wider gap in both performance and cost, thus reinforcing our claim that GaN will crush silicon.