Pushing frequency higher to reduce the size and cost of energy storage and transmission elements such as capacitors, inductors and transformers has been discussed for many years but, with traditional silicon power devices, the tradeoff between frequency and efficiency has been too costly to implement. eGaN FETs now make it possible for designers to reduce the space occupied by their DC-DC converters in 4 cell and industrial systems by increasing frequency while still exceeding the efficiency of converters based on conventional power MOSFETs.