May 13 – 16, 2013
Compound Semiconductor Manufacturing Technology Conference
Location: New Orleans, LA
SESSION 9a: WBG Power Devices
"Emerging Applications for GaN Transistors"
Speaker: David Reusch, PhD; Director of Applications, Efficient Power Conversion Corporation
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Rump Session B: GaN wants to be a Billionaire? Who will call to assist the answer?
Participant: David Reusch, PhD; Director of Applications, Efficient Power Conversion Corporation
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May 16, 2013
PCIM Europe
Location: Nuremberg, Germany
"GaN on Silicon Technology, Devices and Applications"
Speaker: Alex Lidow, PhD; CEO of Efficient Power Conversion Corporation
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April 23, 2013
Designwest
Location: San Jose, CA
"Emerging Applications for GaN Transistors"
Speaker: Alex Lidow, PhD; CEO of Efficient Power Conversion Corporation
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April 8, 2013
2013 CPES Conference Program
Location: Blacksburg, VA
"GaN Transistors – Successes and Challenges Ahead"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
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March 17 – 21, 2013
APEC
Location: Long Beach, CA
"Design of a High Frequency, Low Loss eGaN Converter with Reduced Parasitic Inductances"
Speaker: David Reusch, PhD; Director of Applications Engineering, Efficient Power Conversion Corporation
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"eGaN FETs Enable Low Power High Frequency Wireless Energy Converters"
Speaker: Michael de Rooij, PhD; Senior Director of Applications, Efficient Power Conversion Corporation
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"Using eGaN FETs for Envelope Tracking"
Speaker: Johan Strydom, PhD; Vice President of Applications, Efficient Power Conversion Corporation
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"eGaN FET Based High Frequency Resonant Converter"
Speaker: David Reusch, PhD; Director of Applications, Efficient Power Conversion Corporation
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"GaN Transistors for Efficient Power Conversion"
Speakers: Alex Lidow, PhD; CEO, Efficient Power Conversion Corporation, Michael de Rooij, PhD; Senior Director of Applications, Efficient Power Conversion Corporation, Johan Strydom, PhD; Vice President of Applications, Efficient Power Conversion Corporation, David Reusch, PhD; Director of Applications Engineering, Efficient Power Conversion Corporation
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"Session 2: Wide band-gap semiconductors - Prime time or promises?"
Chair: Kevin Parmenter, Excelsys Technologies Ltd.
Panelists: Tim Mcdonald, International Rectifier
Dr. Alex Lidow, CEO of EPC Efficient Power Conversion
Dr. Dan Kinser, CTO Fairchild
Dr. Primit Parkh, CEO Transphorm
Dr. John Palmour, CTO of CREE
Greg J. Miller Sr., Vice President - Applications Engineering at Sarda Technologies, Inc.
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March 13, 2013
GOMAC Tech Conference
Location: Las Vegas, Nevada
"Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FETs in DC-DC Converters"
Speakers: Johan Strydom, PhD; VP Applications Engineering, Efficient Power Conversion Corporation, Tom Gati, Microsemi Corporation
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November 16, 2012
National Taiwan University Forum
Location: Taiwan
"Emerging Applications for GaN Transistors"
Speaker: Alex Lidow, PhD; CEO, Efficient Power Conversion Corporation
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"How to Use eGaN FETs"
Speaker: Peter Cheng; Field Applications Engineering Manager, Efficient Power Conversion
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October 25, 2012
PSMA Power Technology Roadmap Webinar
"Silicon is in Retreat -- GaN has Become Mainstream"
Speaker: Alex Lidow, PhD; CEO, Efficient Power Conversion Corporation
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October 7 – 12, 2012
ECS – PriME 2012
"eGaN FETs in Low Power Wireless Energy Converters"
Speaker: Michael de Rooij, PhD; Director Applications Engineering, Efficient Power Conversion Corporation
Location: Honolulu, HI
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September 19 – 21, 2012
Darnell’s Power Forum
Location: San Jose, CA
"Emerging Applications for GaN Transistors"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
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"Enabling Envelope Tracking through GaN Transistors"
Speaker: Johan Strydom, PhD; VP Applications Engineering, Efficient Power Conversion Corporation
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"Isolated DC-DC Converters with eGaN® FETs"
Speaker: Johan Strydom, PhD; VP Applications Engineering, Efficient Power Conversion Corporation
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"Putting GaN to Work in your Power Supply"
Speaker: Robert V. White; Embedded Power Labs
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Round Table Discussion
"After we reach maximum efficiency - What's next?"
EPC Participant: Alex Lidow, PhD; CEO, Efficient Power Conversion
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May 22, 2012
Credit Suisse Private Semi Conference
"Gallium Nitride Transistors for Efficient Power Conversion"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: San Francisco, CA
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April 23, 2012
CS Mantech
"Gallium Nitride Transistors for Efficient Power Conversion"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Boston, MA
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March 22, 2012
GOMAC Tech Conference
"Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FET Characteristics"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Las Vegas, Nevada
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February 23, 2012
IIC China Conference
"eGaN FETs for Efficient Power Conversion"
Speaker: Alex Lidow, PhD; CEO, Efficient Power Conversion Corporation
Location: Shenzhen, China
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February 9, 2012
Applied Power Electronics Conference
"Paralleling eGaN FETs"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Orlando, Florida
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February 5, 2012
Applied Power Electronics Conference
"Putting GaN To Work In Your Power Supply"
Speaker: Robert V. White; Embedded Power Labs, Highland Ranch, CO
Location: Orlando, Florida
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December 1, 2011
2011 EDN China Innovation Conference and Awards
"eGaN® FETs in High Performance DC-DC Conversion"
Speaker: Stephen Tsang; VP Sales - Asia, Efficient Power Conversion Corporation
Location: Shanghai, China
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October 11, 2011
IEEE Bipolar / BiCMOS Circuits and Technology Meeting
"Is it the End of the Road for Silicon in Power Conversion?"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Atlanta, Georgia
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October 13, 2011
ECS Meeting and Electrochemical Energy Summit
"eGaN® FETs Compared with Silicon MOSFETs in High Performance Power Conversion Systems"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Boston, Massachusetts
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September 26, 2011
Darnell’s Power Forum
"eGaN® FETs in High Frequency Power Conversion"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: San Jose, CA
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September 17 – 22, 2011
ECCE 2011: IEEE Energy Conversion Congress & Exposition
"GaN as a Displacement Technology for Silicon in Power Management"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Phoenix, AZ
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June 22, 2011
PCIM Asia 2011: Power Electronics/Intelligent Motion/Power Quality
"Driving eGaN® FETs in High Performance Power Conversion Systems"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Shanghai, China
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May 11, 2011
IBM Power Symposium
"High Step Down Ratio Buck Converters with eGaN® FETs"
Speakers: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Johan Strydom PhD; Vice President Applications Engineering, Efficient Power Conversion
Location: Raleigh, NC
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March 24, 2011
GOMAC Tech Conference
"Enhancement Mode Gallium Nitride (eGaN®) Characteristics under Long Term Stress"
Alexander Lidow; CEO, Efficient Power Conversion Corporation
J. Brandon Witcher; Senior Member of the Technical Staff, Sandia National Laboratories
Ken Smalley; Product Engineer, Microsemi Corporation
Enhancement mode HEMT transistors built with Gallium-Nitride-on-silicon (eGaN) have been in the commercial marketplace for more than a year as a replacement for silicon power MOSFETs. Superior conductivity and switching characteristics allow designers to greatly reduce system power losses, size, weight, and cost. Military and space applications would benefit from using eGaN transistors, but the parts would be required to operate reliably under harsh environmental conditions. In this paper we present results demonstrating the stability of these devices at temperature and under radiation exposure.
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October 12, 2010
GOMAC Tech Conference
"Is it the End of the Road for Silicon in Power Management?"
Alexander Lidow; CEO, Efficient Power Conversion Corporation
Dr. Alex Lidow, CEO of Efficient Power Conversion, presented "Is it the End of the Road for Silicon in Power Management?" at the IEEE SCV Electron Devices Society (EDS) on October 12th, 2010.
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