Thirty years of silicon power-MOSFET development taught us that one of the key variables controlling the adoption rate of a disruptive technology is whether or not the product is reliable enough to use in the application. This principle has guided the design of EPC’s enhancement mode Gallium Nitride devices. EPC has published articles describing the reliability tests performed and the results achieved for EPC’s first generation eGaN FETs. Reliability testing has demonstrated that the technology is now ready for general commercial use. We will continue to add new documents to this knowledge base on a regular basis.