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Events

  

Friday, November 07, 2014 4:30 PM - 4:50 PM
IEEE PEAC 2014
Location: Shanghai, China

“Highly Efficient Gallium Nitride Transistors Designed for High Power Density and High Output Current DC-DC Converters”
Speaker: David Reusch, Ph.D.; Director of Applications Engineering, Efficient Power Conversion

Continuing to raise the bar for power conversion performance, eGaN® FETs are steadily improving performance in high power density and high current applications. In this paper we will discuss the latest developments in DC-DC converters, including a major improvement in eGaN FETs with the latest generation devices. This new family of eGaN FETs is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOSFET in high frequency power conversion. The final demonstrations will include a 12 V to 1.2 V, 40 A POL converter operating at a switching frequency of 1 MHz achieving efficiencies above 91.5%, and a 48 V to 12 V, 30 A non-isolated buck DC-DC intermediate bus converter operating at a switching frequency of 300 kHz achieving efficiencies above 98%.

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Tuesday, January 27, 2015 - Friday, January 30, 2015
DesignCon 2015
Location: Santa Clara, CA

“Faster and Lower Cost than Silicon – GaN is Making a New Future!”
Keynote Speaker: Alex Lidow, Ph.D; CEO and Co-Founder, Efficient Power Conversion

For the first time in 60 years there is a serious contender to the dominance of silicon in the world of electronics. Gallium nitride, grown as a thin layer on top of a standard silicon substrate, has demonstrated both a dramatic improvement in transistor performance and the ability to be produced at a lower cost than their aging silicon ancestors. In this keynote talk, the focus will be on enhancement-mode GaN transistors, the challenges that we have uncovered in areas of test and measurement, and the new applications that have emerged as a result of their ability to switch higher voltages and higher currents faster than anything before. Three examples of the impact of this capability in emerging applications – LiDAR (Light Distancing and Ranging), envelope tracking, and high-efficiency wireless energy transfer – will be discussed, including comparisons between the capability of GaN and silicon.

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Wednesday, March 11, 2015 10:25 AM - 10:30 AM
Compound Semiconductor International Conference
Location: Munich, Germany

“Ditching the package to drive down GaN transistor costs”
Keynote Speaker: Alex Lidow, Ph.D, CEO and co-founder

In the world of switching power transistors, the package surrounding the semiconductor has always reduced the performance and increased the cost of the device. Generalizing customers’ dissatisfaction with transistor packaging, there are five key complaints: (1) packages take up too much space, (2) packages add too much electrical resistance, (3) packages add too much inductance, (4) packages add too much thermal resistance, and (5) packages add too much cost. In this presentation we will discuss the reasons why everyone should consider ditching transistors in a package and convert to chip scale LGA gallium nitride transistors that address each of the key complaints.

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