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Events

  

Sunday, September 06, 2015 - Wednesday, September 09, 2015
IEEE 82nd Vehicular Technology Conference (VTC2015)
Location: Boston, MA

"Automotive Compatible Single Amplifier Multi-mode Wireless Power for Mobile Devices"
Speaker: Michael de Rooij, Ph.D., Executive Director of Application Engineering

The proliferation of wireless power products for mobile applications is leading to consumer confusion and hindering adoption of this technology. A simple eGaN® FET based single amplifier topology capable of operating to all of the mobile device wireless power standards is presented. The high reliability of eGaN FETs further make this solution suitable for automotive applications. This paper presents the proposed topology with experimental verification that demonstrates excellent performance at both low frequencies (Qi & PMA standards) and high frequency (A4WP standard).

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Sunday, September 20, 2015
ECCE 2115
Location: Montreal, Quebec

"Improving DC-DC Converter Performance with GaN Transistors"
Speaker: David Reusch, Ph.D., Director of Applications

Gallium Nitride (GaN) power semiconductors are being adopted in an increasing number of power conversion applications. The technology is rapidly developing and product experience in the field is expanding. This tutorial will begin with a discussion of the state-of-the art in GaN technology, including an overview of GaN technology, GaN transistor structures and the latest electrical performance.

The tutorial will continue with design basics fundamental to GaN transistors including drivers, layout, paralleling, dead-time management, and thermal considerations. Following the design basics will be design examples with a focus on 48 VIN to 1 VOUT network and telecom power supplies. Different architectures will be compared and the benefits of GaN transistors will be quantified over Si MOSFETs for various approaches to get 48 VIN to load.

The tutorial concludes with a look into future of this relatively young technology and its potential to improve performance in existing applications and enable new applications not possible with aging silicon MOSFETs. Beyond the discrete transistor, the extension of GaN technology to fully integrated circuits will be discussed, furthering the potential of GaN to raise the bar in power conversion performance.

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Tuesday, September 29, 2015
Darnell’s Energy Summit
Location: Los Angeles, CA

Plenary Session: "The GaN Effect – How GaN is Changing the Way We Live"
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder

Enhancement-mode gallium nitride transistors have been commercially available for over six years and is leading to our elimination of battery chargers and power cords. GaN technology is enabling higher speed wireless data, better cars and superior health care. In this talk we will review the state-of-the-art applications for GaN power devices and present our view of the roadmap for this technology.

Mention “EPC” when registering to receive a discounted registration fee

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Tuesday, September 29, 2015
Darnell’s Energy Summit
Location: Los Angeles, CA

Session 3, Devices and Materials Roundtable Session: "Practical Layout Techniques to Fully Extract the Benefits of Gallium Nitride Power Transistors"
Speaker: Ivan Chan, Field Applications Engineer

The trend for electronics is to continually push towards miniaturization while increasing performance. With silicon MOSFET technology fast approaching its theoretical limit, enhancement-mode gallium nitride (eGaN®) FETs from EPC have emerged to offer a step change improvement in power FET switching performance, enabling next-generation power density possibilities by decreasing size and boosting efficiency. This presentation will explore the recommended layout techniques required to fully extract the benefits of gallium nitride power transistors. A unique paralleling topology optimized for the fast switching nature of eGaN FETs will be presented as well.

Mention “EPC” when registering to receive a discounted registration fee

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Wednesday, September 30, 2015
Darnell’s Energy Summit
Location: Los Angeles, CA

Session 6, Power System Design: "6.78 MHz Wireless Power Performance Evaluation of Monolithically Integrated eGaN®FETs in a ZVS Class D Topology Driving an A4WP Compliant Load"
Speaker: Michael de Rooij, Ph.D., Executive Director of Applications

In this paper we present two new monolithically integrated eGaN FETs suitable for a high efficiency ZVS Class D topology capable of driving A4WP wireless power applications. Two amplifiers will be experimentally tested, one driving to the class 2 A4WP specifications and the other to the class 3 A4WP specifications. The integrate eGaN FETs have been specifically designed for these applications to yield the highest possible amplifier efficiency. Testing will determine the maximum coil impedance range that each of the amplifiers are capable of driving before becoming non-compliant to the A4WP standard.

Mention “EPC” when registering to receive a discounted registration fee

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Tuesday, November 03, 2015
The IEEE 11th International Conference on ASIC (ASICON 2015)
Location: Chengdu, China

"Improving DC-DC Converter Performance with GaN Transistors"
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

Gallium Nitride (GaN) power semiconductors are being adopted in an increasing number of power conversion applications. The technology is rapidly developing and product experience in the field is expanding. This presentation will begin with a discussion of the state-of-the art in GaN technology, including an overview of GaN technology, GaN transistor structures and the latest electrical performance.

The presentation will continue with design examples with a focus on 48 VIN to 1 VOUT network and telecom power supplies. Different architectures will be compared and the benefits of GaN transistors will be quantified over Si MOSFETs for various approaches to get 48 VIN to load.

The presentation concludes with a look into future and GaN’s potential to improve performance in existing applications and enable new applications not possible with aging silicon MOSFETs. Beyond the discrete transistor, the extension of GaN technology to fully integrated circuits will be discussed, furthering the potential of GaN to raise the bar in power conversion performance.

View event details