Events

Wednesday, March 01, 2017 11:00 AM - 12:00 PM
IEEE IAS Education Webinar Series
Location: IEEE Webinar Series

Webinar: Moore’s Law is Alive with GaN Presented by: Alex Lidow, Ph.D., CEO and Co-Founder

11:00 am Eastern Standard Time (New York, GMT-05:00)

The performance of GaN transistors and integrated circuits is climbing up the learning curve in a way reminiscent of Moore’s Law in the go-go years of silicon. In this industry presentation we will show the significant improvements in performance enabled by a new generation of GaN technology in 48 V – 1 V single-stage conversion, wireless charging efficiency, and LiDAR system speed.

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Sunday, March 26, 2017 - Thursday, March 30, 2017
IEEE Applied Power Electronics Conference (APEC) 2017
Location: Tampa, Florida

APEC 2017 – The premier Global Event in Applied Power Electronics

APEC is considered to be the leading conference for practicing power electronics professionals. The APEC program addresses a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics equipment. The combination of high-quality Professional Education Seminars, a full program of refereed papers and an overflowing Exhibit Hall consistently provides an invaluable education each year.

EPC will be an active participant in the technical sessions and an exhibitor on the floor of the conference. In addition, EPC will be sponsoring a customer suite for displaying eGaN® products and demonstration units, as well as holding private meeting with customers.

Product demonstrations within the EPC booth and in the customer suite will include eGaN FETs and ICs in applications such as multi-mode wireless power, LiDAR for autonomous vehicles and AR, and single-stage 48 V – 1 V power conversion for data centers.

Make appointment to meet with EPC experts at APEC 2017

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Sunday, March 26, 2017 - Thursday, March 30, 2017
IEEE Applied Power Electronics Conference (APEC) 2017
Location: Tampa, Florida

Advancements in Reliability Evaluation of eGaN FETs and ICs Demonstrates Readiness for Mainstream Adoption Speaker: Chris Jakubiec, Director of Reliability and Failure Analysis

eGaN® FETs and ICs from Efficient Power Conversion (EPC) have been in volume production since 2010. A large set of reliability data has accompanied the qualification and production release of these products. Many cumulative test hours have been recorded based on various standard Joint Electron Device Engineering Council (JEDEC) stress tests intended for power devices and chip-scale packages. The rigorous set of stress tests that eGaN FETs and ICs have gone through prior to release into production will be detailed. Qualification tests are important, however the ultimate metric of eGaN FET device reliability is how well they are holding up within end user applications. Field reliability experience will be looked at in detail including failure modes. Additional results will be presented for accelerated stress lifetime models of both the die and Wafer Level Chip-Scale Package (WLCSP) board level reliability. This presentation will demonstrate that eGaN FET devices are capable of exceeding reliability standards for which traditional silicon power devices have been measured against, and eGaN FET devices are ready for mainstream adoption.

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Sunday, March 26, 2017 - Thursday, March 30, 2017
IEEE Applied Power Electronics Conference (APEC) 2017
Location: Tampa, Florida

Re-evaluating 48 VIN Server Architectures with High Performance GaN Transistors Speaker: David Reusch, Ph.D., Executive Director of Applications Engineering

Gallium Nitride (GaN) integrated circuits and discrete transistors give the power system engineer a new set of tools for improving efficiency, cost, and power density in server and telecom systems. In this industry session we will examine the new benchmarks in performance as well as the various tradeoffs involved in designing power systems that take an input of 48 V and deliver it to the final destination – a 1 V digital load.

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Sunday, March 26, 2017 - Thursday, March 30, 2017
IEEE Applied Power Electronics Conference (APEC) 2017
Location: Tampa, Florida

Deadtime Losses in eGaN® Fets and Silicon MOSFETs – How Freedom from Reverse Recovery Can Cut Your Losses Speaker: John Glaser, Ph.D., Director of Applications Engineering

There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. This presentation will focus on the use of eGaN FETs as a synchronous rectifier (SR) and the importance of dead-time management.

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Sunday, March 26, 2017 - Thursday, March 30, 2017
IEEE Applied Power Electronics Conference (APEC) 2017
Location: Tampa, Florida

Evaluation of Gate Drive Overvoltage Management Methods for Enhancement Mode Gallium Nitride Transistors Speaker: David Reusch, Ph.D., Executive Director of Applications Engineering

Gallium nitride (GaN) power devices are commercially available from a number of suppliers and the market is growing. The predominant GaN technology is normally-off enhancement mode (e-mode) power transistors. One of the main design challenges of implementing e-mode GaN transistors is the gate drive circuit, in particular, the management of the GaN transistor’s peak gate voltage. In this paper, we will discuss gate drive design fundamentals for e-mode GaN transistors, evaluate various methods for managing gate overvoltage, and propose a novel solution to effectively manage gate overvoltage in half-bridge configurations.

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Sunday, March 26, 2017 4:00 PM - 4:05 PM
IEEE Applied Power Electronics Conference (APEC) 2017
Location: Tampa, Florida

Wireless Power Class E Amplifier using a eGaN® FET and eGaN Gate Driver IC Speaker: Yuanzhe Zhang, Ph.D., Director of Applications Engineering

eGaN FETs have already proven their ability to outperform MOSFETs in many applications such as DC to DC converters. In addition, they are also enabling new applications such as highly resonant wireless power transfer, LiDAR, and envelope tracking. Widespread adoption of GaN is accelerating, and that acceleration is fueled by advances in the cost-benefit ratio. Opportunities for additional cost benefits can come from fertile targets such as improved gate driver availability, as well as the integration of discrete devices into monolithic ICs. The first level of integration came in the form of multiple power FETs, such as a half-bridge and a support FET on a single die. Next levels of integration involve gate driver or more complex functions. The integrated FET with simple gate driver from Panasonic and the integrated 650V half-bridge with analog and logics from Dialog Semiconductor are examples.

The lateral structure of GaN FETs lends itself well for circuit integration including ASIC functions such as a stand-alone gate driver. This presentation will introduce a new low-side only eGaN driver IC that can be used at high frequency and will ultimately be used for full monolithic integration of a FET plus a driver. The performance of this eGaN driver IC will be demonstrated in a differential-mode class E amplifier operating at 6.78MHz in a 33 W capable wireless power transfer application.

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Tuesday, May 16, 2017 - Wednesday, May 17, 2017
PCIM Europe 2017 Conference
Location: Nuremberg, Germany

Designing Manufacturable and Reliable Printed Circuit Boards Employing Chip Scale eGaN® FETs Presenter: Michael de Rooij, Ph.D., Vice President of Applications Engineering

PCIM in Nuremberg is an international meeting point for professionals from the field of power electronics and its applications in drive technology, as well as for power quality. Visitors will find at the conference the latest power semiconductors, passive components, products for thermal management, new materials and sensors and servo technology and products related to power quality and energy management.

EPC will be an active participant in the Poster/Dialogue sessions during the conference.

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Tuesday, June 27, 2017 - Thursday, June 29, 2017
PCIM Asia 2017 Conference
Location: Shanghai, China

Comparison of 6.78 MHz Amplifier Topologies for High Power, Highly Resonant Wireless Power Transfer Presenter: Michael de Rooij, Ph.D., Vice President of Applications Engineering

Experimentally verified differential mode versions of the class E and ZVS class D topologies, built using eGaN® FETs, capable of highly resonant wireless power transfer to power and charge small laptop computers while operating at 6.78 MHz based on the AirFuel™ Class 4 [1] standard at 33 W are compared. The results show greater than 85% amplifier efficiency over the entire full power load range capability can be achieved for either topology without exceeding 80% FET voltage rating or 100°C thermal limit while operating in a 25°C ambient.

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