Events

Electronic Design Innovation Conference & Exhibition (EDI CON 2018)

Wednesday, October 17, 2018 1:30 PM (UTC-08:00) Pacific Time (US & Canada) - 2:30 PM (UTC-08:00) Pacific Time (US & Canada)
Electronic Design Innovation Conference & Exhibition (EDI CON 2018)
Location: Santa Clara, CA

Rethink Server Power Architecture with GaN Technology Speaker: Mark Gurries, Field Applications Engineer
Frequency Matters Theatre

With the power architecture transition from a 12 V to 48 V rack in modern data centers there is an increased interest in improving 48 V down power conversion efficiency and power density. The interest spans both isolated and non-isolated implementations of the intermediate bus converters (IBC) and 48 V to POL configurations. eGaN FETs have the ability to reduce solution size by enabling higher switching frequency operation and improve efficiency over state-of-the-art silicon MOSFET solutions. In this presentation we will present how eGaN FET characteristics, such as low output capacitance (COSS), low RDS(on) in comparison to comparable MOSFETs, and zero reverse recovery charge (QRR), yield lower switching losses that offer 48 V application performance improvement over silicon solutions for just about all topologies. What will be covered are eGaN FET basics, a selection of design details and comparisons that includes both figure of merit (FOM) and measured results compared with comparable MOSFETs. The presentation will conclude with a demonstration of the Texas Instruments PMP4497 48 V to 1 V up to 40 Amps load hard switched transformer based high ratio step down converter that features the LMG5200 GaN Based half bridge module on the primary and EPC’s EPC2023 GaN FETs as synchronous rectifiers.

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Power Kongress

Tuesday, October 23, 2018
Power Kongress
Location: Würzburg, Germany

Visit EPC at Power Kongress

The demand for information is growing at an unprecedented rate with no signs of slowing. Historically, the power needed to support this rapidly growing demand comes from our electrical grid, and goes through multiple conversion stages before it feeds the remaining energy into a digital semiconductor chip, losing efficiency in each stage.

Traditionally, power conversion has been accomplished using silicon-based power transistors. The advent of commercial and cost-effective gallium nitride (GaN) power transistors and integrated circuits signals a new age in power electronics. Stop by the exhibit area at ISMOSYS booth to see how EPC GaN technology increases the efficiency, shrinks the size, and reduces system cost.

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Workshop: Wireless power Transfer (WPT) applied to 5G and New applications

Tuesday, October 30, 2018
Workshop: Wireless power Transfer (WPT) applied to 5G and New applications
Location: Taipei, Taiwan

GaN Technology in Wireless Power Application Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

Highly resonant wireless power systems, based on the AirFuel™ standard, have experienced ongoing development with the goal of increasing power capability, improving efficiency, and making the user experience more intuitive. The implementation of wireless power systems continues to evolve from consumer electronics, to robotics, augmented reality /virtual reality, and healthcare. This increased adoption has led to a greater awareness of the importance of efficiency, and in this presentation the details on how to achieve a significant overall system efficiency improvement through the adoption of eGaN FETs, will be given.

IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018)

Wednesday, October 31, 2018 - Friday, November 02, 2018
IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018)
Location: Atlanta, GA

Evaluation of GaN based Multilevel Converters Speaker: Suvankar Biswas, Ph.D., Senior Applications Engineer

With the significant reduction in board space occupied by the smaller GaN transistors, topologies that require a greater number of active devices as a tradeoff for reduced passive size, the main barrier to higher density, have become attractive. Switched capacitor multilevel converters1 are good examples of topologies that can effectively reduce or eliminate passive components. Two GaN based prototypes (three-level converters), one for a low voltage (LV) 48 V server application and the other for a high voltage (HV) 400 V power factor correction (PFC) circuit are discussed in this paper. Significant efficiency gains are expected for the LV and HV prototypes developed in this abstract, compared to a two-level topology as well as lower passive size.

Thermal Characterization and Design for a High Density GaN-Based Power Stage Speaker: Edward Jones, Ph.D., Senior Applications Engineer

GaN transistors offer significant reduction in operating losses and power stage footprint over conventional Si MOSFETs. With Chipscale GaN FETs, the power density can be further improved by taking advantage of six-sided cooling to extract heat from the FET case as well as through the board. Prior work has shown tremendous improvement in the current-handling capability of chipscale GaN by adding a heatsink1,2. Characterizing a thermal design with temperature sensors compromises the design’s effectiveness, particularly with smaller dies and higher power density converters. Instead, the junction temperatures can be extracted by measuring temperature-sensitive electrical parameters such as Rds,on3. This paper introduces a methodology to extract the thermal resistances of a high density GaN power stage, then presents the resulting improvement in current-handling capability.

Meet with EPC at WiPDA 2018

Visit with EPC in the exhibit area where displays highlight how eGaN FETs and ICs used in applications such as high power density DC-DC power conversion, LiDAR for autonomous vehicles, and motor drives. Stop by to meet EPC’s applications team – the leading experts in applying GaN technology.

User Forum Power Semiconductors

Wednesday, November 07, 2018 - Thursday, November 08, 2018
User Forum Power Semiconductors
Location: Munich, Germany

Getting from 48 Volts in Emerging Server and Automotive Applications Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

Cloud servers, advanced gaming systems, artificial intelligence, cryptocurrency mining, and automotive electronics are all converging rapidly on 48 Volts as the new standard bus voltage. 48 V has the advantage of not requiring isolation and is therefore simpler, smaller, more efficient, and lower cost than other power conversion architectures. In every case, the relatively new GaN transistors and integrated circuits have demonstrated the ability to convert to-and-from 48 Volts with higher efficiency, and smaller size. GaN is also able to significantly reduce costs. In this seminar we will show the various applications and topologies used in these markets and show the steps taken to convince conservative design engineers that the best solution involves GaN.

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Power Electronics Conference 2018

Tuesday, December 04, 2018
Power Electronics Conference 2018
Location: Munich, Germany

Getting from 48 Volts in Emerging Server and Automotive Applications Speaker: Edward Jones, Ph.D., Senior Applications Engineer

Cloud servers, advanced gaming systems, artificial intelligence, cryptocurrency mining, and automotive electronics are all converging rapidly on 48 V as the new standard bus voltage. 48 V has the advantage of not requiring isolation and is therefore simpler, smaller, more efficient, and lower cost than other architectures. GaN technology has demonstrated higher efficiency, and smaller size and is able to significantly reduce costs. In this seminar we will show the various GaN applications and topologies used in these markets.

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