Events

Space Power Workshop

Monday, April 23, 2018 - Thursday, April 26, 2018
Space Power Workshop
Location: Los Angeles, CA

Enhancement Mode Gallium Nitride (eGaN®) FETs for Efficient Power Conversion in Space Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

Enhancement-mode GaN-on-Si (eGaN) FETs have showed superior performance and demonstrated their ability to operate reliably under harsh environmental conditions and high radiation conditions. In this discussion we will present the state-of-the-art in enhancement mode GaN HEMT transistors and monolithic integrated circuits designed for higher frequency operation. We will also show recent testing of these devices under various radiation exposure conditions that demonstrate the robustness of this technology in harsh space environments.

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PCIM Europe 2018

Tuesday, June 05, 2018 - Thursday, June 07, 2018
PCIM Europe 2018
Location: Nuremberg, Germany

PCIM Europe 2018 Hall #7, Booth #539

Join EPC at the upcoming PCIM Europe 2018 Conference on June 5-7 in Nuremberg and see eGaN FETs and ICs used in applications such as DC-DC power conversion, motor control, , LiDAR for autonomous vehicles, and wireless power. Visit us in Hall #7 at Stand #539 for hands-on demonstrations and the opportunity to meet EPC’s applications team – the leading experts in applying GaN technology.

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PCIM ASIA

Tuesday, June 26, 2018 - Thursday, June 28, 2018
PCIM ASIA
Location: Shanghai, China

A Synchronous FET Class E Rectifier for >30 W Highly Resonant Wireless Power Receivers Speaker: Michael de Rooij, Ph.D., VP of Applications, Efficient Power Conversion

6.78 MHz highly resonant wireless power receivers based on the AirFuel standard experience high rectifier losses when using Schottky diodes and fail to meet the thermal limit requirements for many products such as laptops. This proposal uses a synchronous switch GaN FET in a class E topology as an alternative for a 30 W or higher receiver. Initial results show that a full bridge Schottky diode solution reaches a temperature of 70°C with 83.4% system end to end efficiency when delivering 30 W, while the GaN FET used in a class E rectifier reaches only 53°C and 86.1% efficiency

Kilowatt Laser Driver with 120 A, sub-10 nanosecond pulses in < 3 cm2 using an GaN FET Speaker: John Glaser, Ph.D., Director of Applications, Efficient Power Conversion

Lidar time-of-flight distance measurement has become the primary means of high-speed, accurate mapping of 3-D space. A primary application for lidar is for navigation and obstacle avoidance in real-time Advanced Driver Assistance System (ADAS) and autonomous vehicle navigation. The lidar pulsed laser transmitter is a key lidar subsystem. The transmitter must generate high power optical pulses of short duration of less than 10 ns. For a 10 s vehicle sense and response time, a range of 300 m is required, which in turn requires high peak laser power. This work describes a laser driver using a single commercial GaN FET to achieve current pulses into a laser diode of >120 A peak for a peak laser input power of > 4 kW, with a duration < 10 ns. The area occupied by the driver and laser is < 3 cm2.