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Events

  

Wednesday, September 03, 2014
IEEE PELS Webinar
Location: IEEE Webinar Series

“Gallium Nitride FETs for Envelope Tracking Buck Converters”
Speaker: Johan Strydom, Ph.D.; Vice President, Applications

Discrete GaN power devices offer superior hard-switching performance over MOSFETs and are crucial for the development of switching converters for Envelope Tracking, if the system bandwidth requirements are to be met. The system performance is greatly impacted by aspects outside the active power devices, such as high-speed gate drivers and printed circuit board (PCB) layout. In this seminar, the latest family of high frequency enhancement mode gallium nitride power transistors on silicon (eGaN® FETs) is presented in a few multi-megahertz buck converters. The different system level parasitics are discussed and their impact evaluated based the experimental results.

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Thursday, September 04, 2014
IIC China Power Management Conference
Location: Shenzhen, China

“Power Management & Power Semiconductor: Generation 4 eGaN® FETs”
Speaker: Peter Cheng, Asia Pac FAE Director

In this paper we will discuss the latest developments in DC-DC converters with eGaN FETs, including a major improvement in eGaN FETs with the latest generation devices. This new family of eGaN FETs is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the aging power MOSFET in high frequency power conversion. Our demonstrations will include a 12 V to 1.2 V, 40 A POL converter operating at a switching frequency of 1 MHz achieving efficiencies above 91.5%, and a 48 V to 12 V, 30 A non-isolated DC-DC intermediate bus converter operating at a switching frequency of 300 kHz achieving efficiencies above 98%.

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Sunday, September 14, 2014
ECCE 2014
Location: Pittsburgh, PA

"GaN Transistors for Efficient Power Conversion"
Speakers: Alex Lidow, Ph.D; CEO, Efficient Power Conversion Corporation
David Reusch, Ph.D.;  Director of Applications, Efficient Power Conversion Corporation

Gallium Nitride (GaN) is now accepted in many power conversion and RF applications. The technology is rapidly developing and product experience in the field is expanding. This tutorial will begin with a discussion of the state-of-the art in GaN technology, including an overview of GaN technology, GaN transistor structures and the latest electrical performance.

The tutorial will continue with application examples including new developments in high efficiency DC-DC conversion and emerging applications enabled by GaN transistors, such as high frequency Envelope Tracking (ET), and Wireless Power Transfer (WiPo). Following these examples, drivers, layout, paralleling, dead-time management, and thermal considerations will be examined.

The tutorial concludes with a look into future of this relatively young technology and its potential to improve performance in existing applications and enable new applications not possible with aging silicon MOSFETs. Beyond the discrete transistor, the extension of GaN technology to fully integrated circuits will be discussed, furthering the potential of GaN to raise the bar in power conversion performance

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Tuesday, September 23, 2014 - Thursday, September 25, 2014
Darnell Energy Summit
Location: Richmond, VA

Plenary Session: “GaN Transistors – Giving New Life to Moore’s Law”
Speaker: Alex Lidow, Ph.D; CEO, Efficient Power Conversion Corporation

Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this presentation, we will discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore’s Law is alive and well in the world of power semiconductor technology. We will also show the benefits derived from the latest generation eGaN® FETs in new emerging applications such as Class – D audio, LiDAR, wireless power transmission, and RF envelope tracking. All cases support the rapidly evolving trend of conversion from power MOSFETs and LDMOS to gallium nitride transistors.

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Tuesday, September 23, 2014 - Thursday, September 25, 2014
Darnell Energy Summit
Location: Richmond, VA

Educational Seminar: “GaN Transistors for Efficient Power Conversion”
Speakers: Alex Lidow, Ph.D; CEO, Efficient Power Conversion Corporation
David Reusch, Ph.D.; Director of Applications, Efficient Power Conversion

Gallium Nitride is beginning to be broadly accepted in many power conversion and RF applications. The technology is rapidly developing and product experience in the field is expanding. This seminar will begin with Alex Lidow explaining how GaN High Electron Mobility Transistors (HEMT) work followed by an update on the state-of-the art in the technology from the many new entrants into this field. Included in this update will be the latest manufacturing technologies, cost requirements and comparisons, reliability data and acceleration factors.

David Reusch will follow with a tutorial on how to use these high performance devices. They will start with drivers, layout, and thermal considerations for high performance and high frequency power conversion, and then move to several applications examples including high frequency Envelope Tracking (ET), Class-D Audio, RF amplifiers, DC-DC converters, and Wireless Power Transmission.

The seminar concludes with a look into future of the relatively young technology.

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Tuesday, September 23, 2014 - Thursday, September 25, 2014
Darnell Energy Summit
Location: Richmond, VA

Technical Session: “Pushing the State of the Art in High Frequency Hard-Switching Converters using eGaN®FETs”
Speaker: Johan Strydom, Ph.D.; V.P. of Applications Engineering

With hard-switching times in the sub nano-second range, eGaN FETs are expanding the power designer’s useable switching frequency range into the tens of megahertz. Slew rates of up to 75V/ns push the system performance limitations outside of the power devices and into the surrounding components and layout parasitics. In this presentation we will discuss some of these limitations, while demonstrating the ability of the latest generation of gallium nitride transistors to address high frequency hard-switching power applications, such as RF envelope tracking, at efficiencies not currently realizable using traditional silicon MOSFETs.

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Tuesday, September 23, 2014 - Thursday, September 25, 2014
Darnell Energy Summit
Location: Richmond, VA

Technical Session: “Performance comparison using eGaN®FETs in 6.78 MHz class E and ZVS class D Wireless Power Transfer”
Speaker: Michael de Rooij, Ph.D.; Executive Director of Applications Engineering

The popularity of highly resonant wireless power transfer, based on the A4WP standard, operating at 6.78 MHz has increased dramatically over the last few years. In this paper we compare two popular topology candidates, the single ended class E and the ZVS class D when realized using eGaN FETs. The comparison will look at peak power performance, load variation performance, load regulation performance and impact of foreign metal objects on the performance of the devices. The comparison will be experimentally verified using the same Source and Device coil set.

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Tuesday, September 23, 2014 - Thursday, September 25, 2014
Darnell Energy Summit
Location: Richmond, VA

Technical Session: “Advances in DC-DC converters with eGaN® FETs”
Speaker: David Reusch, Ph.D.; Director of Applications Engineering, Efficient Power Conversion

Continuing to raise the bar for power conversion, eGaN FETs are steadily improving performance in high power density and high current applications. In this presentation we will discuss the latest developments in non-isolated and isolated DC-DC converters with eGaN FETs, including techniques for effectively paralleling GaN devices in high current applications, the development of high power density GaN building blocks, and major improvements in eGaN FETs with the latest generation devices. This new family of eGaN FETs is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the aging power MOSFET in high frequency power conversion.

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