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Events

  

Tuesday, February 23, 2016 - Wednesday, February 24, 2016
IRT Saint Exupery 2016 Winter Seminar
Location: Toulouse, France

"Disruptive Technologies for Innovative Developments: GaN and DSM products - Challenges and Perspectives"
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder

Key innovations and achievements on disruptive technologies and their current and future applications will be presented. This seminar will give technical and scientific insights on new semiconductor technologies as well as challenges on induced in scaling node integrated circuits, their effect on application in harsh environment and how reliability is impacted.

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Tuesday, February 23, 2016 - Wednesday, February 24, 2016
IRT Saint Exupery 2016 Winter Seminar
Location: Toulouse, France

Round Table discussion: "Switch Power e-GaN technologies: driving forces and challenges for risk management?"
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder

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Sunday, March 20, 2016 - Thursday, March 24, 2016
IEEE Applied Power Electronics Conference (APEC) 2016
Location: Long Beach, CA

"Thermal Evaluation of Chip–Scale Packaged Gallium Nitride Transistors"
Speaker: David Reusch, Ph.D., Executive Director of Applications Engineering

With power converters demanding higher power density, transistors must be accommodated in an ever decreasing board space. Beyond gallium nitride (GaN) based power transistors’ ability to improve electrical efficiency, they must also be more thermally efficient. In this paper we will evaluate the thermal performance of chip-scale packaged enhancement-mode GaN field effect transistors (eGaN® FETs) and compare their in-circuit electrical and thermal performance with state-of-art Si MOSFETs. The paper will conclude with the proposal of a thermal figure of merit for designers to use as a tool to quickly compare the thermal efficiency of device packaging technologies.

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Sunday, March 20, 2016 - Thursday, March 24, 2016
IEEE Applied Power Electronics Conference (APEC) 2016
Location: Long Beach, CA

"Envelope Tracking GaN Power Supply for 4G Cell Phone Base Stations"
Speaker: Yuanzhe Zhang, Ph.D., Director of Applications Engineering

This paper introduces an envelope tracking (ET) power supply for 4G cell phone base stations using EPC eGaN® FETs. An analytical model was developed for design optimization and verified by single phase synchronous buck converter using zero-voltage switching (ZVS) technique. The model was then extended to four phases and was used to design a 60 W ET power supply with 20 MHz large signal bandwidth. At 25 MHz per-phase switching frequency, measured static power stage efficiency peaks at 96.5% with 68 W output power delivered from 30 V. Experimental results demonstrate accurate tracking of 20 MHz 7dB PAPR LTE envelope with 92% efficiency, delivering 62 W average power from 30 V.

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Sunday, March 20, 2016 - Thursday, March 24, 2016
IEEE Applied Power Electronics Conference (APEC) 2016
Location: Long Beach, CA

Professional Education Seminar:"Getting from 48 V to Load Voltage: Improving Low Voltage DC-DC Converter Performance with GaN Transistors"
Speakers: Alex Lidow, Ph.D., CEO and Co-Founder, David Reusch, Ph.D., Executive Director of Applications Engineering, John Glaser, Ph.D., Director of Applications

Gallium Nitride (GaN) power semiconductors are being adopted in an increasing number of power conversion applications. The technology is rapidly developing and product experience in the field is expanding. This tutorial will begin with a discussion of the state-of-the art in GaN technology, including an overview of GaN technology, GaN transistor structures and the latest electrical performance.

The tutorial will continue with design basics fundamental to GaN transistors including drivers, layout, paralleling, dead-time management, and thermal considerations. Following the design basics will be design examples with a focus on 48 VIN to 1 VOUT network and telecom power supplies. Different architectures will be compared and the benefits of GaN transistors will be quantified over Si MOSFETs for various approaches to get 48 VIN to load.

The tutorial concludes with a look into future of this relatively young technology and its potential to improve performance in existing applications and enable new applications not possible with aging silicon MOSFETs. Beyond the discrete transistor, the extension of GaN technology to fully integrated circuits will be discussed, furthering the potential of GaN to raise the bar in power conversion performance.

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Sunday, March 20, 2016 - Thursday, March 24, 2016
IEEE Applied Power Electronics Conference (APEC) 2016
Location: Long Beach, CA

"Introducing eGaN IC targeting Highly Resonant Wireless Power"
Speaker: Michael de Rooij, Ph.D., Vice President of Applications

EPC has previously demonstrated the ability of eGaN FETs to enable wireless energy transfer in various amplifier topologies. The ZVS class D has shown particular promise in these applications due to its low output impedance and ability to drive wide load impedance ranges. In this article EPC introduces the eGaN IC that was specifically designed to maximize amplifier efficiency in a ZVS class D topology. The new eGaN IC incorporates a half bridge topology and a synchronous bootstrap FET that is used to eliminate gate driver induced reverse recovery losses.

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Sunday, March 20, 2016 - Thursday, March 24, 2016
IEEE Applied Power Electronics Conference (APEC) 2016
Location: Long Beach, CA

"GaN vs. Silicon – Overcoming Barriers to the Rise of GaN"
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder

GaN is gaining ground compared with the aging silicon MOSFET. Volume applications have appeared in numerous applications such as DC-DC converters, LiDAR, Wireless Power, Envelope Tracking, LED lighting, and Class D audio. In this talk we will discuss the barriers encountered in various segments of the power conversion market and the timeline for overcoming these barriers. Included in the discussion are the status of reliability validation, state-of-the-art performance, and the GaN ecosystem.

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