Events

Tuesday, May 16, 2017 - Wednesday, May 17, 2017
PCIM Europe 2017 Conference
Location: Nuremberg, Germany

Designing Manufacturable and Reliable Printed Circuit Boards Employing Chip Scale eGaN® FETs Presenter: Michael de Rooij, Ph.D., Vice President of Applications Engineering

PCIM in Nuremberg is an international meeting point for professionals from the field of power electronics and its applications in drive technology, as well as for power quality. Visitors will find at the conference the latest power semiconductors, passive components, products for thermal management, new materials and sensors and servo technology and products related to power quality and energy management.

EPC will be an active participant in the Poster/Dialogue sessions during the conference.

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Tuesday, May 16, 2017 12:15 PM - 1:15 PM
PCIM Europe 2017 Conference
Location: Nuremberg, Germany

Developing the Next Generation of Power Supplies Presenter: Michael de Rooij, Ph.D., Vice President of Applications Engineering

Presentations for this panel discussion will be focused on the technologies to be used in next generation power supplies. Dr. de Rooij will present the contribution GaN technology can make to improving performance and reducing costs of next generation power supplies. In addition to EPC, panel members include Littelfuse, Murata, Ericsson, and CUI as panel members.

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Wednesday, May 17, 2017 1:30 PM - 3:30 PM
PCIM Europe 2017 Conference
Location: Nuremberg, Germany

GaN – Design, EMC and Measurement Presenter: Michael de Rooij, Ph.D., Vice President of Applications Engineering

Wide band gap devices have been taken over more and more of historically served areas of silicon devices. We are facing higher switching frequency and higher operating temperatures. That together with smaller sizes of similar performing systems need to be handheld. It is a challenge to have improved measurement equipment and be able to analyze the design correct. Leading wide band gap companies together with companies from the test and measurement area will join us for insight designing with GaN and SiC.

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Tuesday, June 27, 2017 - Thursday, June 29, 2017
PCIM Asia 2017 Conference
Location: Shanghai, China

Comparison of 6.78 MHz Amplifier Topologies for High Power, Highly Resonant Wireless Power Transfer Presenter: Michael de Rooij, Ph.D., Vice President of Applications Engineering

Experimentally verified differential mode versions of the class E and ZVS class D topologies, built using eGaN® FETs, capable of highly resonant wireless power transfer to power and charge small laptop computers while operating at 6.78 MHz based on the AirFuel™ Class 4 [1] standard at 33 W are compared. The results show greater than 85% amplifier efficiency over the entire full power load range capability can be achieved for either topology without exceeding 80% FET voltage rating or 100°C thermal limit while operating in a 25°C ambient.

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