Sunday, September 18, 2016 - Thursday, September 22, 2016
2016 IEEE Energy Conversion Congress and Exposition (ECCE)
Location: Milwaukee, WI

Comparison of deadtime effects on the performance of dc-dc converters with GaN FETs and Silicon MOSFETs
Speakers: John Glaser, Ph.D., Director of Applications, and David Reusch, Ph.D., Executive Director of Applications Engineering

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Monday, October 03, 2016 - Wednesday, October 05, 2016
International Workshop on Power Supply On Chip (PwrSoC)
Location: Madrid, Spain

Application of GaN-on-Silicon Technology in Advanced Power Conversion Systems
Speakers: Alex Lidow, Ph.D., , CEO and Co-Founder, EPC

It has been more than seven years since the first enhancement mode gallium nitride power transistors were first delivered to customers, and in that time the technology has advanced with a speed reminiscent of the early days of silicon integrated circuits. Today, scores of customers are in production with systems using GaN-on-silicon in applications such as envelope tracking, wireless power, LiDAR, medical imaging, energy efficient lighting, solar inverters, AC-DC, and DC-DC conversion. These discrete transistors, now produced by several companies, have delivered on the promise of high performance and low cost. The next major technological leap, GaN-on-silicon integrated circuits, further enlarge the performance and cost gap compared with silicon MOSFETs and LDMOS power transistors. In this paper we will show the latest in GaN integrated circuits, quantify their benefits in key applications, and show a roadmap towards greater complexity and functionality.

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