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Events

  

Tuesday, January 27, 2015 - Friday, January 30, 2015
DesignCon 2015
Location: Santa Clara, CA

“Faster and Lower Cost than Silicon – GaN is Making a New Future!”
Keynote Speaker: Alex Lidow, Ph.D; CEO and Co-Founder, Efficient Power Conversion

For the first time in 60 years there is a serious contender to the dominance of silicon in the world of electronics. Gallium nitride, grown as a thin layer on top of a standard silicon substrate, has demonstrated both a dramatic improvement in transistor performance and the ability to be produced at a lower cost than their aging silicon ancestors. In this keynote talk, the focus will be on enhancement-mode GaN transistors, the challenges that we have uncovered in areas of test and measurement, and the new applications that have emerged as a result of their ability to switch higher voltages and higher currents faster than anything before. Three examples of the impact of this capability in emerging applications – LiDAR (Light Distancing and Ranging), envelope tracking, and high-efficiency wireless energy transfer – will be discussed, including comparisons between the capability of GaN and silicon.

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Wednesday, March 11, 2015 10:25 AM - 10:30 AM
Compound Semiconductor International Conference
Location: Munich, Germany

“Ditching the package to drive down GaN transistor costs”
Keynote Speaker: Alex Lidow, Ph.D, CEO and co-founder

In the world of switching power transistors, the package surrounding the semiconductor has always reduced the performance and increased the cost of the device. Generalizing customers’ dissatisfaction with transistor packaging, there are five key complaints: (1) packages take up too much space, (2) packages add too much electrical resistance, (3) packages add too much inductance, (4) packages add too much thermal resistance, and (5) packages add too much cost. In this presentation we will discuss the reasons why everyone should consider ditching transistors in a package and convert to chip scale LGA gallium nitride transistors that address each of the key complaints.

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“Low Voltage GaN – Discussion of Initial Application Adoption and State of Reliability Achievement”
Industry Session Speaker: Alex Lidow, Ph.D.;; CEO and Co-Founder, Efficient Power Conversion

This presentation will show the benefits derived from the latest generation GaN transistors in emerging applications such as Class-D audio, LiDAR, wireless power transmission, and RF envelope tracking. All these cases support the rapidly evolving trend of conversion from power MOSFETs and LDMOS to gallium nitride transistors. We will also show the latest reliability results from both qualification testing and accelerated life testing.

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“A New Family of GaN Transistors for Highly Efficient High Frequency DC-DC Converters”
Poster Session Authors: Johan Strydom, Ph.D.,; V.P. of Applications; David Reusch, Ph.D., Director of Applications

In this paper we will discuss the latest developments in DC-DC converters with eGaN FETs, including a major improvement in eGaN FETs with the latest generation devices. This new family of eGaN FETs is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOSFET in high frequency power conversion. The final demonstrations include a 1MHz, 12 V to 1.2 V, 40 A POL converter achieving efficiencies above 91.5%, and a 300 kHz, 48 V to 12 V, 30 A non-isolated DC-DC intermediate bus converter achieving efficiencies above 98%.

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“The ZVS Voltage Mode Class D Amplifier, an eGaN® FET-Enabled Topology for Highly Resonant Wireless Energy Transfer”
Technical Session Speaker: Michael de Rooij, Ph.D.; ; Executive Director of Applications Engineering

The popularity of highly resonant, loosely coupled, wireless energy transfer systems operating at 6.78 MHz has increased dramatically over the last few years [1, 2, 3, 4]. In this paper we present the zero voltage switching (ZVS) voltage mode class D amplifier topology [5, 6, 7] and evaluate its performance using eGaN FETs and MOSFETs. The comparison will look at peak power performance, load variation performance, load regulation performance, the impact of foreign metal objects on device performance, and how to tune the source coil to ensure optimal performance over the entire operating load range. The comparison will be experimentally verified using the 2 different coil sets namely; A4WP Class 3 Source with Category 3 Device coil set and a WiTricity Coil set [8]. The paper will conclude by summarizing the supporting experimental evidence that shows that the ZVS class D is superior to all other topologies for wireless energy transfer.

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“Enhancement Mode Gallium Nitride Transistor Reliability”
Technical Session Speakers: Robert Strittmatter, Ph.D., ; Engineering Director; Chunhua Zhou, Ph.D., Member Technical Staff

The industry’s understanding of the reliability of GaN transistors has continued to grow with positive results. In this paper we develop a more general understanding of enhancement mode GaN FETs’ primary failure modes under voltage and temperature stress. Large populations were tested from multiple device lots in both high temperature gate bias and high temperature reverse bias. We present extensive data from accelerated stress testing beyond the datasheet limits. The stress factors include voltage and temperature and, based on the statistical analysis, we are able to project time to failure (TTF) within the extended operational range of EPC2001.

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Monday, March 23, 2015 - Thursday, March 26, 2015
GOMACTech 2015
Location: St. Louis, MO

“A New Generation of Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FETs for High Frequency DC-DC Conversion”
Authors: Alex Lidow, Ph.D., CEO and Co-Founder; Johan Strydom, Ph.D., V.P. of Applications

Enhancement-mode GaN-on-Si (eGaN) FETs have showed superior device performance and also demonstrated their ability to operate reliably under harsh environmental conditions and high radiation conditions. In this paper we present results characterizing a newly released family of fourth-generation enhancement mode GaN HEMT transistors designed for higher power and high frequency operation with on-resistance as low as 1 mΩ. All previous generations of eGaN FETs have shown excellent radiation tolerance[Reference] and this new generation has a similar, but improved structure. The stability of these devices under radiation exposure as well as showing their capability in high-performance DC-DC converters will be presented.

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Monday, March 23, 2015 - Thursday, March 26, 2015
GOMACTech 2015
Location: St. Louis, MO

“Radiation Tolerant Enhancement Mode Gallium Nitride Transistor Reliability”
Poster Presenters: Alex Lidow, Ph.D., CEO and Co-Founder; Robert Strittmatter Ph.D., Engineering Director

The industry’s understanding of the reliability of GaN transistors has continued to grow with positive results. In addition to the publication of several reliability reports showing excellent performance across a wide set of operating conditions, in this paper we develop a more general understanding of enhancement mode gallium nitride (eGaN®) FETs’ primary failure modes under voltage and temperature stress. Large populations were tested from multiple device lots in both high temperature gate bias (HTGB) and high temperature reverse bias (HTRB). We present extensive data from accelerated stress testing beyond the datasheet limits. The stress factors include voltage and temperature and, based on the statistical analysis of this data, we are able to project time to failure (TTF) within the extended operational range of EPC2001. In addition to the excellent reliability performance, there transistors have proved to be extraordinarily tolerant to both single event (SEE) and total dose (TID) exposure[Reference].

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