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Events

  

Sunday, May 03, 2015 - Wednesday, May 06, 2015
IEEE International Workshop On Integrated Power Packaging (IWIPP 2015)
Location: Chicago, IL

“A New Generation of Semiconductor Packaging Paves the Way for Higher Efficiency Power Conversion”
Speakers: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

Semiconductor packaging has been saddled with five key complaints since the advent of the solid state transistor; (1) packages have too much resistance, (2) they have too much inductance, (3) they take up too much space, (4) they have poor thermal properties that limit heat extraction, and (5) they cost too much. In 2010 enhancement mode gallium nitride power transistors were introduced without a surrounding plastic package. The unique characteristics of the lateral GaN-on-silicon transistors enable the active devices to be protected from the normal environmental abuses without a cumbersome molded plastic package. These chipscale packages, with a Land Grid Array (LGA) format, eliminate the parasitic inductance and resistance of the semiconductor package as well as the space occupied a conventional package. In this talk we quantify the advantages of chipscale packaging in these five areas of complaint and show how system performance benefits in high frequency DC-DC conversion.

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Sunday, May 03, 2015 - Wednesday, May 06, 2015
IEEE International Workshop On Integrated Power Packaging (IWIPP 2015)
Location: Chicago, IL

"Seminar - GaN Power Switch Modules for Increased Energy Efficiency"
Speaker: David Reusch, Ph.D., Director of Applications, Efficient Power Conversion

Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices promise significant energy and cost savings for power electronics converters than feasible with silicon power devices. GaN power diodes and HEMTs rated up to 650V volts are commercially available; and other wide bandgap (WBG) power devices rated up to 3.5kV are expected to be soon made commercially available. Also, WBG power switch modules rated up to 1200 volts and 100 amps are commercially available.

This half-day short course will present the physics, technology, circuit modeling, and reliability of GaN power switch modules for increased energy efficiency in a wide range of DC-DC power converter applications. The design and performance of prototype point-of-load (POL) power converters will be discussed and tradeoff in performance vs. cost will be made.

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Monday, May 11, 2015
ISPSD 2015
Location: Hong Kong

Plenary Session: “GaN Transistors – Giving New Life to Moore’s Law”
Plenary Speaker: Alex Lidow, Ph.D., CEO, Efficient Power Conversion

Enhancement-mode gallium nitride transistors have been commercially available for over five years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this presentation, we will discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore’s Law is alive and well in the world of power semiconductor technology. We will also enumerate the advantages of GaN over silicon in terms of performance, cost, and reliability.

Author/Presenter

Alex Lidow is CEO of Efficient Power Conversion Corporation (EPC). Prior to founding EPC, Dr. Lidow was CEO of International Rectifier Corporation. A co-inventor of the HEXFET power MOSFET, Dr. Lidow holds many patents in power semiconductor technology and has authored numerous publications on related subjects. He most recently co-authored, GaN Transistors for Efficient Power Conversion, the first textbook on GaN FET technology and applications. Lidow earned his Bachelor of Science degree from Caltech in 1975 and his Ph.D. from Stanford in 1977.

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Wednesday, May 13, 2015
IEEE Wireless Power Transfer Conference
Location: Boulder, CO

Industry Panel: Consumer Electronics Challenges & Opportunities
EPC Panelist: Michael de Rooij, Ph.D. Executive Director of Applications

Panel Objective:
Provide an appreciation for the challenges and opportunities that arise in the development of wireless power technologies for consumer electronics and medical, with a focus on 1 – 100 W range

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Tuesday, May 19, 2015
PCIM Europe
Location: Nuremberg, Germany

"Monolithic GaN Integration for Higher DC-DC Efficiency and Power Density"
Speaker: David Reusch, Ph.D., Director of Applications, Efficient Power Conversion

Power converters are constantly trending towards higher output power, higher efficiency, and higher power density.To provide improved performance better power devices are required. For silicon (Si) power devices, the gains in performance have slowed as the technology has matured and approaches its theoretical limits[1]. Gallium nitride (GaN) devices have emerged as a possible replacement for silicon devices in various power conversion applications and as an enabler of new applications not previously possible [1]-[4].In this paper we will discuss the latesteGaN®FETsdevelopments, including a major improvement with the latest generation of discrete devices and introduce a new family of monolithic half bridge ICs offering unmatched high frequency performance. These new families of eGaN FETs are widening the performance gap with the aging power MOSFET in high frequency power conversion by providing significant gains in key switching figures of merit, continued reductions of performance limiting in-circuit parasitics, and improved thermal performance.

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Wednesday, May 20, 2015
PCIM Europe
Location: Nuremberg, Germany

"Enhancement-Mode Gallium Nitride Transistors in Automotive Applications"
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

Enhancement-mode gallium nitride transistors have been in production for over 5 years. As the technology has matured it has been adopted into a number of automotive applications such as cockpit wireless charging, LiDAR sensing, and EV charging with many more to follow. In this paper, we will discuss the current and future applications of GaN technology in these automotive applications, as well as motor drives for electric and hybrid vehicles. We will also discuss the timing and the value added by GaN in each application.

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Wednesday, May 20, 2015
PCIM Europe
Location: Nuremberg, Germany

"High Power Fully Regulated Eighth-Brick DC-DC Converter with GaN FETs"
Speaker: John Glaser, Ph.D., Director of Applications, Efficient Power Conversion

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Wednesday, May 20, 2015
PCIM Europe
Location: Nuremberg, Germany

"Reliable Volume Production of Wide Band Gap Semicondutors"
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

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Thursday, May 21, 2015
PCIM Europe
Location: Nuremberg, Germany

"Performance Comparison for A4WP Class-3 Wireless Power Compliance between eGaN® FET and MOSFET in a ZVS Class D Amplifier"
Speaker: Michael de Rooij, Ph.D.; Executive Director of Applications, Efficient Power Conversion

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Sunday, June 28, 2015 - Thursday, July 02, 2015
Compound Semiconductor Week
Location: Santa Barbara, CA

"Making a Business Out Of GaN Technology"
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

For the first time in 60 years, a new higher-performance technology is less expensive to produce than the silicon counterpart. Gallium nitride, grown as a thin layer on top of a standard silicon substrate, has demonstrated both a dramatic improvement in transistor performance [1] and the ability to be produced at a lower cost than their silicon ancestors. Enhancement-mode GaN transistors have unleashed new applications as a result of their ability to switch higher voltages and higher currents faster than any transistor before.

We will show that enhancement-mode gallium nitride power transistors that are commercially available today are able to outperform the state-of-the-art silicon power MOSFET in all of the five key attributes of a power transistor: (1) lower conduction losses, (2) smaller size, (3) faster switching speed, (4) better thermal conduction, and (5) lower cost to produce.

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