Sunday, June 26, 2016 3:30 PM
Location: Shanghai, China

10 W Multi-mode Capable Wireless Power Amplifier for Mobile Devices
Speaker: Michael de Rooij, Ph.D., Vice President of Applications

There are currently 3 wireless power standards for the mobile device market, namely; the Wireless Power Consortium (Qi) standard [1], the Power Matters Alliance (PMA) standard [2] and the Alliance for Wireless Power (A4WP) standard [3]. Recently PMA and A4WP merged to become known as AirFuel™. The proliferation of wireless power products for mobile applications will lead to consumer confusion and hinder adoption of this technology. A simple eGaN®FET based single amplifier topology capable of operating to all of the mobile device wireless power standards is presented. It uses a modified ZVS class D amplifier topology capable of operating at both high (6.78 MHz) and low frequencies (100 kHz through 315 kHz). In addition, a specially designed source coil that can be used for all the wireless power standards will be discussed. The amplifier and source coil together allow for true multi-mode capable wireless power transfer that will be experimentally verified to the A4WP class 2 and Qi/PMA standards and is designed to efficiently deliver up to 10 W into the load.

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Tuesday, July 05, 2016 10:15 AM
Centre for Power Electronics Annual Conference
Location: Nottingham, England

GaN Transistors – Giving New Life to Moore’s Law
Speakers: Alex Lidow, Ph.D., , CEO and Co-Founder, EPC

Enhancement-mode gallium nitride transistors have been commercially available for over six years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this presentation, we will discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore’s Law is alive and well in the world of power semiconductor technology. We will also enumerate the advantages of GaN over silicon in terms of performance, cost, and reliability.

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Sunday, September 18, 2016 - Thursday, September 22, 2016
2016 IEEE Energy Conversion Congress and Exposition (ECCE)
Location: Milwaukee, WI

Comparison of deadtime effects on the performance of dc-dc converters with GaN FETs and Silicon MOSFETs
Speakers: John Glaser, Ph.D., Director of Applications, and David Reusch, Ph.D., Executive Director of Applications Engineering

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Monday, October 03, 2016 - Wednesday, October 05, 2016
International Workshop on Power Supply On Chip (PwrSoC)
Location: Madrid, Spain

Application of GaN-on-Silicon Technology in Advanced Power Conversion Systems
Speakers: Alex Lidow, Ph.D., , CEO and Co-Founder, EPC

It has been more than seven years since the first enhancement mode gallium nitride power transistors were first delivered to customers, and in that time the technology has advanced with a speed reminiscent of the early days of silicon integrated circuits. Today, scores of customers are in production with systems using GaN-on-silicon in applications such as envelope tracking, wireless power, LiDAR, medical imaging, energy efficient lighting, solar inverters, AC-DC, and DC-DC conversion. These discrete transistors, now produced by several companies, have delivered on the promise of high performance and low cost. The next major technological leap, GaN-on-silicon integrated circuits, further enlarge the performance and cost gap compared with silicon MOSFETs and LDMOS power transistors. In this paper we will show the latest in GaN integrated circuits, quantify their benefits in key applications, and show a roadmap towards greater complexity and functionality.

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