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Events

  

Tuesday, May 20, 2014 - Thursday, May 22, 2014
PCIM Europe
Location: Nuremberg, Germany

"Multi Megahertz Buck Converters using eGaN® FETs for Envelope Tracking"
Speaker: Johan Strydom, Ph.D.; Vice President of Applications, Efficient Power Conversion Corporation

With discrete GaN devices capable of switching at slew rates up to 70V/ns, the system performance is greatly impacted by aspects outside the active power devices, such as high speed gate drivers and printed circuit board (PCB) layout. In this paper, the latest family of high frequency enhancement mode gallium nitride power transistors (eGaN® FETs) is presented for use in multi megahertz buck converters. These devices were designed to address high-frequency hard-switching power applications not practical with discrete Si MOSFETs, thus enabling applications such as envelope tracking that require high-frequency at higher voltages. A number of 10 MHz buck converters are presented with voltages up to 42V and output power up to 40W. In this paper, the limitation to switching at these levels using discrete device are also discussed.

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Tuesday, May 20, 2014 - Thursday, May 22, 2014
PCIM Europe
Location: Nuremberg, Germany

"eGaN® FET based Wireless Energy Transfer Topology Performance Comparisons"
Speaker: Michael de Rooij, Ph.D.; Director of Applications, Efficient Power Conversion Corporation

eGaN FETs have previously been demonstrated in a classic voltage mode class D wireless energy transfer system that had a peak efficiency over 70% and provide a 4% higher in total efficiency than a comparable MOSFET version. In this article eGaN FETs are again employed and compared in highly resonant wireless energy transfer where various topologies, such as the current mode class D, single ended class E, and a novel high efficiency voltage mode class D. The comparisons will be based on efficiency and sensitivity to load and coil coupling variations. Each of the topologies will be experimentally tested based on using the same source and device coil set with the same device rectifier. The experimental units will operate with loosely coupled coils at 6.78 MHz (ISM band) and deliver between 15 W and 30 W (depending on topology). The design of the amplifiers will look at ways that the device parameters, such as COSS can be absorbed into the coil or matching network.

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Tuesday, May 20, 2014 - Thursday, May 22, 2014
PCIM Europe
Location: Nuremberg, Germany

"Improving Performance of High Speed GaN Transistors Operating in Parallel for High Current Applications"
Speaker: David Reusch, Ph.D.; Director of Applications, Efficient Power Conversion Corporation

Gallium nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and switching speeds beyond the capability of silicon power MOSFETs. In this paper, we will discuss paralleling high speed GaN devices in applications requiring higher output current. This work will discuss the impact of in-circuit parasitics on performance and propose PCB layout methods to improve parallel performance of high speed GaN transistors. A 48V to 12V, 480W, 40A buck converter operating at a switching frequency of 300kHz in an optimized parallel layout achieving efficiencies above 96.5% from 35% to 100% load is demonstrated.

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Wednesday, May 21, 2014
PCIM Europe
Location: Nuremberg, Germany

Rap Session: " Si vs. SiC/GaN - Competition or Coexistence?"
Participant: Alex Lidow, Ph.D.;  CEO, Efficient Power Conversion Corporation

Silicon Carbide and more recently Gallium Nitride have gained more and more interest by power electronics designers particularly for inverter and power supply applications. But Silicon technology is still moving forward. The intention of this panel discussion is to inform PCIM visitors about the pros and cons of SiC and GaN in relation to progress in Si also in certain applications such as power supplies and renewable energies, about company-specific technologies and product roadmaps, and last but not least market trends.

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Sunday, June 01, 2014 - Friday, June 06, 2014
International Microwave Symposium
Location: Tampa Bay, Florida

"GaN-based Power Supplies and Power Supply Modulators for Efficient Powering of RF PAs"
Speaker: Michael de Rooij; Executive Director of Application Engineering

Enhancement mode Gallium Nitride FETs are normally-off switches and are rapidly replacing Silicon power MOSFETS in many power management applications. The fast switching characteristics of these wide band-gap (WBG) materials, combined with the absence of reverse recovery characteristics of these switches enable higher efficiency and power density in switching DC-DC power supplies.

This presentation will introduce the characteristics of eGaN® FETs and how they compare with today’s Silicon power MOSFETs for implementing static switching power supplies. Emphasis will be placed on the implementation of eGaN DC-DC power converters, highlighting the challenges associated with designing envelope tracking and other applications in RF power amplifiers loads.

The discussion will detail best-practice design flow, device sizing considerations, and accurate prediction of loading requirements. At the end of the presentation, the audience will have a broad knowledge of the benefits of eGaN FETs and the key design parameters to achieve best performance when used in power management circuits, particularly for powering RF amplifiers.

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Tuesday, June 17, 2014
PCIM Asia
Location: Shanghai, China

"Performance Evaluation of eGaN® FETs in Low Power High Frequency Class E Wireless Energy Converter"
Speaker: Michael de Rooij, Ph.D.; Executive Director of Application Engineering

EPC has previously demonstrated the ability of eGaN FETs to enable wireless energy transfer using a class D system with efficiency over 70%. EPC further demonstrates eGaN FETs used in class E wireless system that showed a 20 percentage point improvement in efficiency over the class D using the same coils and device load. The design will also operate with loosely coupled coils and will operate in the 6.78 MHz ISM band.

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Sunday, September 14, 2014
ECCE 2014
Location: Pittsburgh, PA

"GaN Transistors for Efficient Power Conversion"
Speakers: Alex Lidow, Ph.D; CEO, Efficient Power Conversion Corporation
David Reusch, Ph.D.;  Director of Applications, Efficient Power Conversion Corporation

Gallium Nitride (GaN) is now accepted in many power conversion and RF applications. The technology is rapidly developing and product experience in the field is expanding. This tutorial will begin with a discussion of the state-of-the art in GaN technology, including an overview of GaN technology, GaN transistor structures and the latest electrical performance.

The tutorial will continue with application examples including new developments in high efficiency DC-DC conversion and emerging applications enabled by GaN transistors, such as high frequency Envelope Tracking (ET), and Wireless Power Transfer (WiPo). Following these examples, drivers, layout, paralleling, dead-time management, and thermal considerations will be examined.

The tutorial concludes with a look into future of this relatively young technology and its potential to improve performance in existing applications and enable new applications not possible with aging silicon MOSFETs. Beyond the discrete transistor, the extension of GaN technology to fully integrated circuits will be discussed, furthering the potential of GaN to raise the bar in power conversion performance

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