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Events

  

Wednesday, March 11, 2015 10:25 AM - 10:30 AM
Compound Semiconductor International Conference
Location: Munich, Germany

“Ditching the package to drive down GaN transistor costs”
Keynote Speaker: Alex Lidow, Ph.D., CEO and co-founder

In the world of switching power transistors, the package surrounding the semiconductor has always reduced the performance and increased the cost of the device. Generalizing customers’ dissatisfaction with transistor packaging, there are five key complaints: (1) packages take up too much space, (2) packages add too much electrical resistance, (3) packages add too much inductance, (4) packages add too much thermal resistance, and (5) packages add too much cost. In this presentation we will discuss the reasons why everyone should consider ditching transistors in a package and convert to chip scale LGA gallium nitride transistors that address each of the key complaints.

Registration Information

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“Low Voltage GaN – Discussion of Initial Application Adoption and State of Reliability Achievement”
Industry Session Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

This presentation will show the benefits derived from the latest generation GaN transistors in emerging applications such as Class-D audio, LiDAR, wireless power transmission, and RF envelope tracking. All these cases support the rapidly evolving trend of conversion from power MOSFETs and LDMOS to gallium nitride transistors. We will also show the latest reliability results from both qualification testing and accelerated life testing.

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“A New Family of GaN Transistors for Highly Efficient High Frequency DC-DC Converters”
Poster Session Authors: David Reusch, Ph.D., Director of Applications; Johan Strydom, Ph.D., V.P. of Applications

In this paper we will discuss the latest developments in DC-DC converters with eGaN FETs, including a major improvement in eGaN FETs with the latest generation devices. This new family of eGaN FETs is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOSFET in high frequency power conversion. The final demonstrations include a 1MHz, 12 V to 1.2 V, 40 A POL converter achieving efficiencies above 91.5%, and a 300 kHz, 48 V to 12 V, 30 A non-isolated DC-DC intermediate bus converter achieving efficiencies above 98%.

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“The ZVS Voltage Mode Class D Amplifier, an eGaN® FET-Enabled Topology for Highly Resonant Wireless Energy Transfer”
Technical Session Speaker: Michael de Rooij, Ph.D., Executive Director of Applications Engineering

The popularity of highly resonant, loosely coupled, wireless energy transfer systems operating at 6.78 MHz has increased dramatically over the last few years [1, 2, 3, 4]. In this paper we present the zero voltage switching (ZVS) voltage mode class D amplifier topology [5, 6, 7] and evaluate its performance using eGaN FETs and MOSFETs. The comparison will look at peak power performance, load variation performance, load regulation performance, the impact of foreign metal objects on device performance, and how to tune the source coil to ensure optimal performance over the entire operating load range. The comparison will be experimentally verified using the 2 different coil sets namely; A4WP Class 3 Source with Category 3 Device coil set and a WiTricity Coil set [8]. The paper will conclude by summarizing the supporting experimental evidence that shows that the ZVS class D is superior to all other topologies for wireless energy transfer.

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“Enhancement Mode Gallium Nitride Transistor Reliability”
Technical Session Speakers: Robert Strittmatter, Ph.D., Engineering Director; Chunhua Zhou, Ph.D., Member Technical Staff

The industry’s understanding of the reliability of GaN transistors has continued to grow with positive results. In this paper we develop a more general understanding of enhancement mode GaN FETs’ primary failure modes under voltage and temperature stress. Large populations were tested from multiple device lots in both high temperature gate bias and high temperature reverse bias. We present extensive data from accelerated stress testing beyond the datasheet limits. The stress factors include voltage and temperature and, based on the statistical analysis, we are able to project time to failure (TTF) within the extended operational range of EPC2001.

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“Effectively Paralleling Gallium Nitride Transistors for High Current and High Frequency Applications”
Speaker: David Reusch, Ph.D., Director of Applications

Gallium nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and switching speeds beyond the capability of silicon (Si) power MOSFETs. In this paper, we will discuss paralleling high speed GaN transistors in applications requiring higher output current. This work will discuss the impact of in-circuit parasitics on performance and propose printed circuit board (PCB) layout methods to improve parallel performance of high speed GaN transistors. Four parallel half bridges in an optimized layout operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A single phase buck converter achieving efficiencies above 96.5% from 35% to 100% load will be demonstrated. Also in this paper, we will discuss the latest eGaN® FET developments including the fourth generation devices designed for higher current handling capability.

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“GaN Transistors for Efficient Power Conversion”
Exhibitor Seminar Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

Gallium nitride transistors are rapidly being designed into many power conversion and RF applications. This seminar will provide an update on the state-of-the art in GaN transistor technology, highlighting the latest generation of EPC enhancement-mode GaN products.

  • Devices that offer a significant reduction in a key figure of merit for high power density DC-DC conversion.
  • A family of monolithic half-bridge devices that increase efficiency and power density, while reducing end-product assembly costs.
  • The extension of the eGaN product family to 450 V.

In addition, several applications currently using GaN transistors such as high power density DC-DC converters, high frequency envelope tracking, and wireless power transfer will be discussed.

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“Wide Bandgap Semiconductor Devices in Power Electronics – Who, What, Where, When, and Why?”
Rap Session Panelist: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

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Sunday, March 15, 2015 - Thursday, March 19, 2015
APEC 2015
Location: Charlotte, NC

“Wireless Transfer of Power: Facts and Fictions”
Rap Session Panelist: Michael de Rooij, Ph.D., Executive Director of Applications Engineering

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Thursday, April 09, 2015
International Workshop on Wide Band Gap Power Electronics 2015 (IWWPE)
Location: Hsinchu, Taiwan

“GaN-Trends and Applications”
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

Enhancement-mode gallium nitride transistors have been commercially available for over five years. Commercially available gallium nitride (GaN) FETs are designed to be both higher performance and lower cost than state-of-the-art silicon-based power MOSFETs. This achievement marks the first time in 60 years that any technology rivals silicon both in terms of performance and cost, and signals the ultimate displacement of the venerable, but aging power MOSFET.

Over these past five years the number of applications utilizing GaN FETs has increased exponentially. Originally designed to improve the efficiency of isolated and non-isolated DC-DC converters, surprising new applications have surfaced that are enabled by the GaN FET’s ultra-fast switching speed. Examples of new applications enabled by GaN technology include, high-resolution LiDAR for autonomous vehicles as well as enhanced human-machine interfaces, RF envelope tracking for wireless networks such as 4G/LTE, wireless power transfer that eliminate the need for power cords, and high resolution MRI systems that more precisely isolate tissue irregularities in humans. GaN FETs have also demonstrated an ability to operate in extreme radiation environments which opens many new possibilities for satellite power systems.

In addition to these completely new applications, GaN transistors have made great progress in high-efficiency DC-DC converters. Typically outperforming silicon-based systems by a wide margin, GaN FET-based systems are always smaller in size, more efficient, and have proven to be extremely reliable.

As an example of the rapid development of gallium nitride technology, in September 2014, Efficient Power Conversion Corporation (EPC) introduced the first enhancement-mode GaN integrated circuits; a family of monolithic half-bridge devices that further improve system speed and power density. More complex ICs will follow. Progress in the development and applications of GaN technology has been very rapid and reminiscent of Moore’s Law in silicon-based digital ICs.

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Tuesday, April 21, 2015
2015 International Reliability Physics Symposium (IRPS)
Location: Monterey, California

“Enhancement Mode Gallium Nitride Transistor Reliability”
Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

The industry’s understanding of the reliability of GaN transistors has continued to grow with positive results. In addition to the publication of several reliability reports [1-6] showing excellent performance across a wide set of operating conditions. In this presentation we develop a more general understanding of commercially available enhancement mode gallium nitride transistors’ primary failure modes under voltage and temperature stress. Large populations were tested from multiple device lots in both high temperature gate bias (HTGB) and high temperature reverse bias (HTRB). The first section of this presentation reports on the results from a wide spectrum of reliability qualification testing undergone by EPC’s eGaN® FETs. The second section reports on the failure rate predictions using acceleration factors derived by stressing devices outside of normal operating conditions. Comparisons with reported failure rates in silicon MOSFETs and SiC MOSFETs will also be shown. In the last section, we discuss the reliability advantages of wafer level chipscale (WLCS) packaging compared to conventional MOSFET packages.

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Sunday, May 03, 2015 - Wednesday, May 06, 2015
IEEE International Workshop On Integrated Power Packaging (IWIPP 2015)
Location: Chicago, IL

“A New Generation of Semiconductor Packaging Paves the Way for Higher Efficiency Power Conversion”
Speakers: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion; David Reusch, Ph.D., Director of Applications

Semiconductor packaging has been saddled with five key complaints since the advent of the solid state transistor; (1) packages have too much resistance, (2) they have too much inductance, (3) they take up too much space, (4) they have poor thermal properties that limit heat extraction, and (5) they cost too much. In 2010 enhancement mode gallium nitride power transistors were introduced without a surrounding plastic package. The unique characteristics of the lateral GaN-on-silicon transistors enable the active devices to be protected from the normal environmental abuses without a cumbersome molded plastic package. These chipscale packages, with a Land Grid Array (LGA) format, eliminate the parasitic inductance and resistance of the semiconductor package as well as the space occupied a conventional package. In this talk we quantify the advantages of chipscale packaging in these five areas of complaint and show how system performance benefits in high frequency DC-DC conversion.

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Monday, May 11, 2015
ISPSD 2015
Location: Hong Kong

Plenary Session: “GaN Transistors – Giving New Life to Moore’s Law”
Plenary Speaker: Alex Lidow, Ph.D., CEO, Efficient Power Conversion

Enhancement-mode gallium nitride transistors have been commercially available for over five years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this presentation, we will discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore’s Law is alive and well in the world of power semiconductor technology. We will also enumerate the advantages of GaN over silicon in terms of performance, cost, and reliability.

Author/Presenter

Alex Lidow is CEO of Efficient Power Conversion Corporation (EPC). Prior to founding EPC, Dr. Lidow was CEO of International Rectifier Corporation. A co-inventor of the HEXFET power MOSFET, Dr. Lidow holds many patents in power semiconductor technology and has authored numerous publications on related subjects. He most recently co-authored, GaN Transistors for Efficient Power Conversion, the first textbook on GaN FET technology and applications. Lidow earned his Bachelor of Science degree from Caltech in 1975 and his Ph.D. from Stanford in 1977.

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