Events

Tuesday, August 29, 2017 - Friday, September 01, 2017
Interpack
Location: San Francisco, CA

Panel Presentation: GaN Transistors – Enabling the Next Generation of Power Electronics Presenter: David Reusch, Ph.D., Executive Director of Applications Engineering

In a post-silicon world, GaN is taking power conversion to the next level. Gallium nitride transistors are rapidly being designed into many power conversion applications. This panel presentation will provide an update on the state-of-the art in GaN transistor technology, highlighting the latest generation of EPC enhancement-mode GaN products and end-use applications.

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Tuesday, August 29, 2017 - Friday, September 01, 2017
Interpack
Location: San Francisco, CA

Thermal Evaluation of Chip–Scale Packaged Gallium Nitride Transistors Presenter: David Reusch, Ph.D., Executive Director of Applications Engineering

With power converters demanding higher power density, transistors must be accommodated in an ever-decreasing board space. Beyond gallium nitride based power transistors’ ability to improve electrical efficiency, they must also be more thermally efficient. In this presentation we will evaluate the thermal performance of chip-scale packaged enhancement-mode GaN field effect transistors (eGaN® FETs) and compare their in-circuit electrical and thermal performance with state-of-art silicon MOSFETs. The paper will conclude with the proposal of a thermal figure of merit for designers to use as a tool to quickly compare the thermal efficiency of device packaging technologies.

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