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EPC Joining PCIM Asia 2017 For Knowledge Exchange with Engineers on How to Choose among 6.78 MHz Amplifier Topologies for High Power, Highly-resonant Wireless Charging Applications

Categories: Press Releases
EPC Joining PCIM Asia 2017 For Knowledge Exchange with Engineers on How to Choose among 6.78 MHz Amplifier Topologies for High Power, Highly-resonant Wireless Charging Applications

EL SEGUNDO, Calif. — June 21st, 2017 -- Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, enables a lower-cost, single transmit amplifier solution that can wirelessly charge devices, regardless of the standard used in the receiving device.

Meet EPC experts on power management at PCIM Asia Exhibition and Conference on June 28th, 2017 at 11 a.m. at Meeting Room 2, B2 of Shanghai World Expo Exhibition and Convention Center in China. Dr. Michael de Rooij, Vice President of Application Engineering, EPC, will share with engineers about a choice among topologies to achieve customer-oriented designs for high power, highly resonant wireless charging applications.

In recent years, development of wireless charging systems have been fueled by consumer products that are equipped with this functionality. As wireless power gains popularity, there is a push for operation in the higher frequency ISM bands of 6.78 MHz and 13.56 MHz where resonant systems allow spatial freedom with high efficiency, powering of different power-level devices, and powering of multiple devices simultaneously. At these high frequencies, traditional MOSFET technology is approaching its performance limit. With switching transition speeds in the sub nano-second range, an alternative to MOSFETs are enhancement-mode eGaN FETs making them ideal for wireless power applications due to their ability to operate at high frequency and high voltage.

EPC will present an experimentally verified comparison of differential-mode versions of Class E and ZVS Class D amplifiers when operating at 6.78 MHz in a highly resonant wireless power system, delivering a maximum of 33 W into the load and based on the AirFuelTM Class 4 standard. The results show greater than 85% amplifier efficiency over the entire full power load range capability can be achieved for either topology without exceeding 80% FET voltage rating or 100°C thermal limit while operating in a 25°C ambient.

EPC recently introduced Gen 5 eGaN FETs including EPC2046 (200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current) and EPC2047 (10 mΩ, 200 V), which comes with the development board of EPC9081. Both EPC2046 and EPC2047 can be used in wireless charging applications.

For details about PCIM Asia 2017, please visit http://www.pcimasia-expo.com.cn/shanghai/zh-cn/visitors/welcome.html

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation: Winnie Wong (winnie.wong@epc-co.com)