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The Power and Evolution of GaN, Part 5: Building a Low Cost, High Efficiency 12 V to 1 V POL Converter with eGaN FETs and ICs

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The Power and Evolution of GaN, Part 5: Building a Low Cost, High Efficiency 12 V to 1 V POL Converter with eGaN FETs and ICs

As an example of the contribution to performance GaN devices can make to one of these mainstream applications, a traditional silicon application, the 12 V – 1 V point-of-load (POL) DC/DC converter will be examined. An eGaN IC based 12 V to 1 V, 12 A load converter yielding a peak efficiency of 78% at 5 MHz with a power density of at least 1000 W/in3, all with a cost below $0.20 per watt will be shown

Power Systems Design
January, 2019
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