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How Enhancement Mode Gallium Nitride Transistors (eGAN FETs) Work - APEC 2012

Categories: Interviews

Alex Lidow, the co-inventor of the HEXFET power MOSFET and CEO of Efficient Power Conversion (EPC), describes how their Enhancement Mode Gallium Nitride Transistors (eGAN FETs) work to bring tremendous size and performance advantages over silicon power MOSFETs.

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