zh-CNja-JP

News

  

Efficient Power Conversion (EPC) Blurs the Line Between Power and RF Transistors with Family of Gallium Nitride Transistors Capable of Amplification into the Multiple GHz Range

Categories: Press Releases

Power systems and RF designers now have access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon.

EL SEGUNDO, Calif. — September 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products.

Cutting new ground for power transistors, these third generation devices have switching transition speeds in the sub nano-second range, making them capable of hard switching applications above 10 MHz. Even beyond the 10MHz for which they were designed, these products exhibit very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.

“We are very excited about how our innovative new family of eGaN FETs will change the industry. These products take EPC and gallium nitride transistor technology to a level of performance that enables applications that were previously beyond the capability of MOSFETs. We now have eGaN FETs that can be used in both power semiconductor and RF applications,” said Alex Lidow, EPC’s co-founder and CEO.

Products in the family are available with on-resistance values from 125 mΩ through 530 mΩ, and three blocking voltage capabilities, 40 V, 65 V and 100 V. These new transistors have several new features that further enable designers to take full advantage of the high performance gallium nitride FETs have to offer. These features include reduction in QGD thereby reducing voltage transient switching losses, improved Miller ratio providing high dv/dt immunity, low inductance pads for improved connection to both gate and drain circuits, orthogonal current flow between the gate and drain circuits for enhanced CSI reduction, and a separate gate return connection also for enhanced CSI reduction.

Examples of applications benefiting from the low power, compact, high frequency EPC8000 family of devices include hard-switching power converters operating in the multi-megahertz range, envelope tracking in RF power amplifiers, highly resonant wireless power transfer systems for wireless charging of mobile devices.

The EPC9027 development board, featuring the EPC8007 devices and the LM5113 gate driver IC in a half bridge configuration, is available now. Additional development boards will be available to support designers in evaluating and incorporating other EPC8000 family products into their power conversion systems.

EPC8000 Family Product Specifications:

 

Evaluation units of the EPC8000 family of products are immediately available in 10-piece packs starting at $430 through Digi-Key Corporation at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates or text "EPC" to 22828
Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP
Like EPC on Facebook at http://www.facebook.com/EPC.Corporation

Trademarks

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350, joe.engle@epc-co.com