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Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users

Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users
In this conference GaN market and technology status will be addressed and its future evolution will be debated by mixing visions from designers, manufacturers, and end users. EL SEGUNDO, Calif. — January 2019 — Efficient Power Conversion (EPC) is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emerging GaN ... Read more
Categories: Press Releases

Why go for GaN?

Why go for GaN?
GaN technology has matured to a point where it can challenge traditional silicon technology.  Gallium nitride(GaN)-on-silicon low voltage power devices have enabled many new applications since commercial availability began in 2010. New markets, such as light detection and ranging (LiDAR), envelope tracking, and wireless power, emerged due to the superior switching speed of GaN. These new applications have helped develop a strong supply chain, low production costs, and an enviable reliability record. All of this provides adequate incentive for the more conservative design ... Read more
Categories: Articles

Automotive Qualified eGaN FETs Help Lidar Systems ‘See’ Better, Increase Efficiency, and Reduce Costs in 48 V Automotive Power Systems

Automotive Qualified eGaN FETs Help Lidar Systems ‘See’ Better, Increase Efficiency, and Reduce Costs in 48 V Automotive Power Systems
Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of two new gallium nitride devices. EL SEGUNDO, Calif.— January 2019 — EPC announces successful AEC Q101 qualification of two additional eGaN devices, addressing a range of applications in the automotive industry and other harsh environments.  The new products, EPC2206, and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS and 100 VDS ratings respectively. Read more
Categories: Press Releases

Efficient Power Conversion (EPC) to Display GaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR for Autonomous Cars at 2019 CES

Efficient Power Conversion (EPC) to Display GaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR for Autonomous Cars at 2019 CES
Within the EPC hospitality suite, wirelessly powered systems for the home and GaN based, industry-leading LiDAR systems used in autonomous vehicles will be on display. EL SEGUNDO, Calif. — December 2018 — Efficient Power Conversion (EPC) will be demonstrating the power of eGaN® technology to enhance two game-changing consumer applications – wireless power and LiDAR for self-driving cars – at the 2018 Consumer Electronics Show (CES) in Las Vegas, January 8th through the 11th. Read more
Categories: Press Releases

EPC Expands Asian Team to Unleash the Power of Innovations for Customer Solutions

EPC Expands Asian Team to Unleash the Power of Innovations for Customer Solutions
As part of its expansion to support a widening customer base for DC-DC, LiDAR, wireless power applications and beyond, Efficient Power Conversion Corporation has expanded its Asia-based team with new members who are in close proximity to customers in 21 regions throughout Asia Pacific. EL SEGUNDO, Calif. — November 28, 2018 — To support its accelerating sales growth in Asia, Efficient Power Conversion Corporation (EPC) is proud to announce the expansion of the sales and FAE team in Asia Pacific to support its expanding customer base, maximize new business acquisition and ... Read more
Categories: Press Releases

Gallium nitride is the silicon of the future

Gallium nitride is the silicon of the future

Last week, Anker debuted a tiny new power brick, crediting its small size with the component it uses instead of silicon: gallium nitride (GaN). It’s the latest example of the growing popularity of this transparent, glass-like material that could one day unseat silicon and cut energy use worldwide.

The Verge
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Building the Smallest and Most Efficient 48 V to 5 - 12 V DC to DC using eGaN FETs and ICs

The Power and Evolution of GaN – Part 2 of 6 part series

Building the Smallest and Most Efficient 48 V to 5 - 12 V DC to DC using eGaN FETs and ICs
With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost. Power Systems Design Read article Read more
Categories: Articles

GaN-Based VRM Hybrid Converter Achieves 95% Efficiency for 48V to 1-2V/10A Power Conversion

GaN-Based VRM Hybrid Converter Achieves 95% Efficiency for 48V to 1-2V/10A Power Conversion

With the emergence of the 48V bus architecture, a new hybrid converter using gallium nitride (GaN) transistors can be employed which achieves a peak efficiency that exceeds 95% and with 225W/in3 power density. Of great interest for data center applications, where light load efficiency is critical for energy savings, the converter efficiency is kept higher than 90% down to a 20% load.

PowerPulse
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Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology
Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization. EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and ... Read more
Categories: Press Releases

The Growing Ecosystem for eGaN FET Power Conversion

The Growing Ecosystem for eGaN FET Power Conversion
In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs. Power Systems Designs By Edward A. Jones, Michael de Rooij, and David Reusch Read article Read more
Categories: Articles

eGaN FET-Based Synchronous Rectification

eGaN FET-Based Synchronous Rectification
As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN® FETs when operated as a “body diode” and outline their relative advantages and ... Read more
Categories: Articles

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon
The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives. EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to ... Read more
Categories: Press Releases

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost
EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size. EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and ... Read more
Categories: Press Releases

APEC2018: EPC Professional Education GaN Seminar

APEC2018: EPC Professional Education GaN Seminar

Alex Lidow and his team of Michael de Rooij, David Reusch, and John Glaser gave an excellent technical tutorial this morning to a packed audience of Professional Engineers (PEs). The topic was a very timely ‘Maximizing GaN FET and IC performance: Not just a drop-in replacement of MOSFETs’.

Planet Analog
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Categories: Articles

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion
Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits. EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the ... Read more
Categories: Press Releases

GaN-Based 48 V to 12 V Regulated Power Supply Development Board Delivers over 1250 W per Cubic Inch and Over 96% Efficiency

GaN-Based 48 V to 12 V Regulated Power Supply Development Board Delivers over 1250 W per Cubic Inch and Over 96% Efficiency
Efficient Power Conversion’s EPC9130 five-phase development board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors. EL SEGUNDO, Calif.— March 2018 —Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board.  This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding ... Read more
Categories: Press Releases

EPC to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High Frequency Applications Using eGaN Technology at APEC 2018

EPC to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High Frequency Applications Using eGaN Technology at APEC 2018
EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive. EL SEGUNDO, Calif. — February 2018 — The EPC team will be delivering seven technical presentations on gallium nitride (GaN) technology and applications at APEC 2018 in San Antonio, Texas from March 4th through the 8th. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology. Read more
Categories: Press Releases

Will GaN and the Tesla SpaceX car survive space radiation? Yes and no.

Will GaN and the Tesla SpaceX car survive space radiation? Yes and no.
Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen. The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications. Electro Pages Read article Read more
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