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The Growing Ecosystem for eGaN FET Power Conversion

The Growing Ecosystem for eGaN FET Power Conversion
In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs. Power Systems Designs By Edward A. Jones, Michael de Rooij, and David Reusch Read article Read more
Categories: Articles

Efficient Power Conversion (EPC) Experts Joining Engineers in China to Innovate New Designs by Maximizing GaN FET and IC Performance, More Than Just Replacing MOSFETs

Efficient Power Conversion (EPC) Experts Joining Engineers in China to Innovate New Designs by Maximizing GaN FET and IC Performance, More Than Just Replacing MOSFETs

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including wireless charging, DC/DC, LiDAR and automotive.

EL SEGUNDO, Calif. — March 8, 2018 — The EPC executive and technical team will be engaged in three industry events in Shenzhen and Shanghai, China on March 14 – 16 in demonstrating and sharing with engineers on how to maximize GaN FET and IC performance in their innovative designs, to win their customers.

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Categories: Press Releases

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost
EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size. EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and ... Read more
Categories: Press Releases

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion
Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits. EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the ... Read more
Categories: Press Releases

Why experts believe cheaper, better lidar is right around the corner

Why experts believe cheaper, better lidar is right around the corner
This article takes a deep dive into lidar technology. It explains how the technology works and the challenges technologists face as they try to build lidar sensors that meet the demanding requirements for commercial self-driving cars. The bottom line is that while bringing lidar costs down will take a significant amount of difficult engineering work, there don't seem to be any fundamental barriers to bringing the cost of high-quality lidar down below $1,000—and eventually below $100. That means the technology—and ultimately, self-driving vehicles that depend on lidar—should be well within ... Read more
Categories: Articles

eGaN Technology Reliability and Physics of Failure - Gate Voltage Stress Reliability

eGaN Technology Reliability and Physics of Failure - Gate Voltage Stress Reliability
The previous installment in this series focused on the physics of failure surrounding thermo-mechanical reliability of EPC eGaN wafer level chip-scale packages. A fundamental understanding of the potential failure modes under voltage bias is also important. This installment will provide an overview of the physics of failure associated with voltage bias at the gate electrode of gallium nitride (GaN) field effect transistors (FETs). Here we look at the case of taking the gate control voltage to the specified limit and beyond to investigate how eGaN FETs behave over a projected ... Read more
Categories: Articles

eGaN Technology Reliability and Physics of Failure - Strain on solder joints

eGaN Technology Reliability and Physics of Failure - Strain on solder joints
The first three installments in this series covered field reliability experience and stress test qualification of EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs) and integrated circuits (ICs). Excellent field reliability that was documented is the result of applying stress tests covering the intended operating conditions the devices will experience within applications. Of equal importance is understanding the underlying physics of how eGaN devices will fail when stressed beyond intended operating conditions (e.g. datasheet parameters and safe operating area). ... Read more
Categories: Articles

eGaN Technology Reliability and Physics of Failure Blog #3

eGaN Technology Reliability and Physics of Failure Blog #3
The first two installments in this series reported in detail on field reliability experience of Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs and integrated circuits (ICs). The excellent field reliability of eGaN devices demonstrates stress-based qualification testing is capable of ensuring reliability in customer applications. In this installment we will examine the stress tests that EPC devices are subjected to prior to being considered qualified products. Planet Analog Chris Jakubiec July 9, 2016 Read article Read more
Categories: Articles

eGaN Technology Reliability and Physics of Failure - Examining eGaN Field Reliability

eGaN Technology Reliability and Physics of Failure - Examining eGaN Field Reliability
Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs and integrated circuits (ICs) are finding their way into many end user applications such as LIDAR, wireless charging, DC-DC conversion, RF base station transmission, satellite systems, and audio amplifiers. Field reliability is the ultimate metric that corroborates the quality level of eGaN® FETs and ICs that have been deployed in customer applications. In our first installment we provided an overview of eGaN FET field reliability which included 6 years of volume production ... Read more
Categories: Articles
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