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EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz

EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz
The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 48V power converters, LiDAR, and LED lighting. EL SEGUNDO, Calif. — July 2018 — Efficient Power Conversion (EPC) announces the EPC2051, a 100 V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint. Read more
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