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GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion
Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits. EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the ... Read more
Categories: Press Releases

EPC Announces Development Board Operating Up To 10 MHz for High Efficiency at High Frequency Point-of-Load DC-DC Conversion

EPC Announces Development Board Operating Up To 10 MHz for High Efficiency at High Frequency Point-of-Load DC-DC Conversion
The EPC9086 high efficiency half-bridge development board can operate up to 10 MHz featuring a 30 V EPC2111 eGaN® half bridge in combination with the recently introduced high speed Peregrine Semiconductor PE29102 gate driver. EL SEGUNDO, Calif.—October 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of The EPC9086 development board, a high efficiency half-bridge development board that can operate up to 10 MHz.  The EPC9086 board measures 2” x 2” and contains a 30 V, 15 A EPC2111 enhancement-mode gallium nitride half ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces High Frequency Monolithic Gallium Nitride Half Bridge Enabling 12 V to 1.8 V System Efficiency Over 85% at 5 MHz at 14 A Output

Efficient Power Conversion (EPC) Introduces High Frequency Monolithic Gallium Nitride Half Bridge Enabling 12 V to 1.8 V System Efficiency Over 85% at 5 MHz at 14 A Output
EPC2111 GaN half bridge offers power systems designers a solution that increases efficiency for complete overall point-of-load system applications over 85% at 14 A when switching at 5 MHz and over 80% when switching at 10 MHz and converting from 12 V to 1.8 V. EL SEGUNDO, Calif. — June2017 — EPC announces the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated.  This increases both efficiency (especially at ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Announces Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications

Efficient Power Conversion (EPC) Announces Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications
EPC9059 development board showcases industry’s first monolithic half-bridge enhancement-mode gallium nitride (eGaN®) integrated circuits for high current, high frequency point-of-load applications for increased power density. EL SEGUNDO, Calif.— January 2016 — Efficient Power Conversion Corporation (EPC) introduces the EPC9059 half-bridge development board for high current, high frequency point-of-load (POL) applications using eGaN ICs to reduce power conversion size. The EPC9059 development board has a 30 V maximum device voltage with a 50 A maximum output ... Read more
Categories: Press Releases

eGaN FETs Increase Efficiency, Power Density in Industrial POL Converters

Designers of point of load (POL) converters used in 24 VDC systems traditionally have had to decide between the high cost of an isolated converter and the low frequency and efficiency of a buck converter. When compared with the 12 V POL converter common in computing systems, the higher voltage of the 24 V POL converter increases FET voltage to at least 40 volts to accommodate switch-node ringing and increases commutation and COSS losses. eGaN FETs, from EPC, offer ultra-low QGD for low commutation losses and low QOSS for lower losses when charging and discharging the output capacitance. In ... Read more
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