News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

WiGaN: eGaN FETs in Wide Load Range High Efficiency Wireless Power

Practical wireless power systems need to address the convenience factor of such systems. Standards such as the A4WP Class 3 have defined a broad coil impedance range that address the convenience factor and can be used as a starting point to compare the performance of the amplifiers. In this installment of WiGaN both the ZVS Class-D and Class-E amplifiers will be tested at 6.78 MHz to the A4WP Class 3 standard.

Read article

Read more
Categories: Articles

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling over 87% System Efficiency for a 28 V to 1 V Point of Load Converter at 14 A output.

The EPC2101 GaN power monolithic half bridge offers power systems designers a solution that increases efficiency and power density. For a complete buck converter, system efficiency approaches 87% at 14 A, and over 82% at 30 A when switching at 500 kHz and converting from 28 V to 1 V while reducing the board area occupied by transistors by 50% when compared to a discrete solution. EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, ... Read more
Categories: Press Releases

How to measure the world's fastest power switch

Gallium Nitride (GaN) FETS are poised to replace silicon power devices in voltage regulators and DC-DC power supplies. Their switching speeds are significantly faster and their RDS(on) is lower than silicon MOSFETS. That can lead to higher power efficiency power sources, which is good for all of us. If you're designing power circuits with GaN devices, you need a grasp of the device's switching speed.

Read article

Read more
Categories: Articles

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Half Bridge enabling 48 V to 12 V System Efficiency at 20 A output over 97%

EPC2105 GaN half bridge offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 98% at 10 A when switching at 300 kHz and converting from 48 V to 12 V, and 84% at 14 A when switching at 300 kHz and converting from 48 V to 1.0 V. EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. ... Read more
Categories: Press Releases
RSS

Archive