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Enhancement Mode Gallium Nitride MOSFET Delivers Impressive Performance

A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental operating mechanism are similar to silicon-only MOSFET alternate.

Article By Sam Davis, Editor in Chief
Power Electronics Technology
March 1, 2010

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Categories: GaN Market News
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