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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Applied Power Electronics And Exposition Conference (APEC®)

EPC CEO and applications experts will conduct a half-day seminar and technical presentations on GaN FET technology and applications at the IEEE APEC 2013 power electronics industry conference. EL SEGUNDO, Calif. — February, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at APEC 2013. The conference will be held in Long Beach, California from March 17th through the 21st. Read more
Categories: Press Releases

Efficient Power Conversion Development Board Demonstrates Ease of Designing Power Systems with 200 V eGaN FETs

EPC9004 features eGaN® FETs in combination with dedicated GaN FET gate driver from Texas Instruments EL SEGUNDO, Calif.—February 2013 — Efficient Power Conversion Corporation (EPC) today announced the availability of the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how recently introduced IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective. The EPC9004 ... Read more
Categories: Press Releases
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