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Thoughtful Board Design Unlocks the Promise of GaN

Thoughtful Board Design Unlocks the Promise of GaN
Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies. Electronic Design March, 2016 Read article Read more
Categories: Articles

20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN FETs

20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN FETs
This article presents an envelope tracking power supply using EPC8004 high frequency eGaN® FETs for 4G LTE wireless base station infrastructure. An ET power supply with four-phase soft-switching buck converter using eGaN FETs is able to accurately track a 20 MHz 7 db PAPR LTE envelope signal with greater than 92% total efficiency, delivering 60 W average power. The design is scalable to satisfy different power levels by choosing different eGaN FETs. Bodo’s Power Systems Yuanzhe Zhang, Ph.D., Michael de Rooij, Ph.D. March, 2016 Read article Read more
Categories: Articles

100 W, 92% Efficient eGaN FET Development Board from Efficient Power Conversion (EPC) for the 6.78 MHz AirFuel Wireless Power Standard

100 W, 92% Efficient eGaN FET Development Board from Efficient Power Conversion (EPC) for the 6.78 MHz  AirFuel Wireless Power Standard
EPC9065 development board has the highest power and highest efficiency at 6.78 MHz for the AirFuelTM wireless power standard, using eGaN® FETs EL SEGUNDO, Calif.— February 2016 — Efficient Power Conversion (EPC) announces the EPC9065, a development board that can serve as the amplifier stage for AirFuelTM Alliance Class 4 and Class 5 wireless power transfer applications. This board is a Zero Voltage Switching (ZVS) differential-mode class-D amplifier development board configured at, but is not limited to, 6.78 MHz (Lowest ISM band). Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces eGaN Power Transistor Enabling Superior Resolution in Augmented Reality and Autonomous Vehicle Applications

Efficient Power Conversion (EPC) Introduces eGaN Power Transistor Enabling Superior Resolution in Augmented Reality and Autonomous Vehicle Applications
New EPC2040 eGaN® FET offers extremely fast and consistent switching, enabling greater resolution and accuracy in applications dependent upon pulsed laser drivers, which include LiDAR systems used for guidance in 3D sensing in augmented reality systems and autonomous vehicles EL SEGUNDO, Calif. — February 2016 — Efficient Power Conversion Corporation (EPC) announces the EPC2040 power transistor, an extremely small, fast switching gallium nitride power transistor that enables superior resolution, faster response time, and greater accuracy for high speed end-use ... Read more
Categories: Press Releases

Radiated EMI Filter Design for an eGaN FET Based ZVS Class D Amplifier in 6.78MHz Wireless Power Transfer

Radiated EMI Filter Design for an eGaN FET Based ZVS Class D Amplifier in 6.78MHz Wireless Power Transfer

In this installment, we present a method to design a suitable EMI filter that can reduce unwanted frequencies to levels within radiated EMI specifications, and do this without negatively impacting the performance of the wireless power coil. In addition, the overall radiated EMI design aspects will also be covered.

EEWeb - Wireless & RF Magazine
Michael de Rooij, Ph.D.
February, 1, 2016
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