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Si vs. GaN vs. SiC: Which process and supplier are best for my power design?

By: Steve Taranovich, EDN March 15, 2013 As the race toward leadership in the power element continues to evolve, industry experts have said that by mid-2013 about half a dozen GaN, Si, and SiC suppliers will reveal process enhancements, new architectures, and the latest new capabilities that will bring new choices and tools to the industry. http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design- Read more
Categories: GaN Market News

Paultre on Power - Power GaN

Author: By Alix Paultre, Editorial Director, PSD Date: 3/12/2013 In this podcast, we talk to Alex Lidow of Efficient Power Conversion (EPC) about GaN devices and their impact on the power industry. EPC is a leader in enhancement-mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN®) FETs as power MOSFET replacements in applications such as point-of-load converters, Power over Ethernet (PoE), server and computer DC-DC converters, LED lighting, cell phones, RF transmission, solar micro-inverters, and ... Read more
Categories: Interviews

Efficient Power Conversion (EPC) Introduces Development Board Featuring 100 V Enhancement Mode Gallium Nitride (eGaN) FETs

EPC9010 development board features dedicated eGaN driver to facilitate rapid design of high frequency switching power conversion systems using the 100 V EPC2016 eGaN FET EL SEGUNDO, Calif.— February, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency ... Read more
Categories: Press Releases

eGaN FETs Increase Efficiency, Power Density in Industrial POL Converters

Designers of point of load (POL) converters used in 24 VDC systems traditionally have had to decide between the high cost of an isolated converter and the low frequency and efficiency of a buck converter. When compared with the 12 V POL converter common in computing systems, the higher voltage of the 24 V POL converter increases FET voltage to at least 40 volts to accommodate switch-node ringing and increases commutation and COSS losses. eGaN FETs, from EPC, offer ultra-low QGD for low commutation losses and low QOSS for lower losses when charging and discharging the output capacitance. In ... Read more
Categories: Articles

EPC named a Constant Contact 2012 All Star

EPC is honored to be recognized as a 2012 All Star by Constant Contact. This status is an annual designation that only 10% of Constant Contact customers achieve. It is awarded to companies making extra efforts to engage customers. We would like to thank all who have supported us. If you are not already receiving our newsletter please join our list @ http://bit.ly/qr28tu

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Categories: Press Releases
Tags: Awards

eGaN FET-Silicon Power Shoot-Out Volume 13, Part 1: Impact of Parasitics on Performance

The ability of enhancement mode gallium nitride based power devices, such as the eGaN® FET, to achieve higher efficiencies and higher switching frequencies than possible with silicon MOSFETs has been demonstrated for a variety of applications. With improvements in switching figure of merit provided by eGaN FETs, the packaging and PCB layout parasitics are critical to high performance. This first part of this article will study the effect of parasitic inductance on performance for eGaN FET and MOSFET based point of load (POL) buck converters operating at a switching frequency of 1 MHz, ... Read more
Categories: Articles
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