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How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs

How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs
Light detection and ranging (lidar) is a versatile light-based remote sensing technology that recently has been the subject of great attention. It has shown up in a number of media venues and has even led to public debate about the engineering choices of a well-known electric car company, Tesla Motors. While this article is not going to enter the fray, it will provide some background on lidar and discuss its strong connection to power electronics technologies. Published in: IEEE Power Electronics Magazine ( Volume: 4, Issue: 1, March 2017 ) Read article Read more
Categories: Articles

EPC eGaN moves closer to the ideal capabilities of the power element

EPC eGaN moves closer to the ideal capabilities of the power element
Efficient Power Conversion (EPC) has dealt another blow to the silicon MOSFET power element with its Generation 5 (Gen5) process enhancements, bringing improved performance while decreasing the cost of off-the-shelf Gallium Nitride transistors and shrinking their die size and board footprint. Alex Lidow, EPC’s CEO/co-founder, and his team have once again put their expertise to work in their efforts to provide designers these unique power solution choices for new markets that need performance beyond what silicon devices have been able to provide. The team’s technical capabilities and ... Read more
Categories: Articles

Gallium Nitride maker EPC takes a big step forward in its quest to kill silicon chips

Gallium Nitride maker EPC takes a big step forward in its quest to kill silicon chips
The $330 billion silicon chip industry is the foundation of everything electronic. But it’s slowing down as it reaches a new level of maturity that is prompting a bunch of mergers and acquisitions. That’s why Alex Lidow, an industry pioneer and the chief proponent of an alternative material to silicon — gallium nitride (GaN) — feels like his time has come. His company, Efficient Power Conversion (EPC), is unveiling a new generation of eGaN chips that are half the size of previous chips and have significantly higher performance. VentureBeat March 15, 2017 Read article Read more
Categories: Articles

eGaN Technology from Efficient Power Conversion (EPC) Takes a Quantum Leap in Both Performance and Cost

eGaN Technology from Efficient Power Conversion (EPC) Takes a Quantum Leap in Both Performance and Cost
EPC introduces EPC2045 and EPC2047 eGaN® FETs that are half the size of prior generation eGaN transistors with significantly higher performance. EL SEGUNDO, Calif. — March 2017 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ, 100 V) and the EPC2047 (10 mΩ, 200 V) eGaN FETs. Applications for the EPC2045 include single stage 48 V to ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) to Showcase Life-Changing Applications Using eGaN Technology at 2017 Applied Power Electronics and Exposition Conference (APEC)

Efficient Power Conversion (EPC) to Showcase Life-Changing Applications Using eGaN Technology at 2017 Applied Power Electronics and Exposition Conference (APEC)
EPC will exhibit more than 25 demonstrations showing how GaN technology’s superior performance is changing the way we live and company experts will deliver seven technical presentations on GaN FET and IC technology at APEC® 2017, the premier global event in applied power electronics. EL SEGUNDO, Calif. — March 2017 — The EPC team will be delivering seven technical presentations on gallium nitride (GaN) technology and applications at APEC 2017 in Tampa, Florida from March 26th through the 30th. In addition, the company will feature its latest eGaN® FETs and ICs, ... Read more
Categories: Press Releases
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