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Efficient Power Conversion (EPC) Announces Upgrade of Development Board Featuring Enhancement Mode Gallium Nitride (eGaN) FETs Using Dedicated GaN FET Gate Driver from Texas Instruments

EPC9005 demonstrates the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials. EL SEGUNDO, Calif.—April 2013— Efficient Power Conversion Corporation (EPC) today announces the availability of the EPC9005 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective. The EPC9005 ... Read more
Categories: Press Releases

eGaN FET-Silicon Power Shoot-Out Volume 13, Part 2: Optimal PCB Layout

Optimizing PCB layout for an eGaN FET based point of load (POL) buck converter will reduce parasitics, thus leading to improved efficiency, faster switching speeds, and reduced device voltage overshoot compared to conventional MOSFET based designs.

By David Reusch, Ph.D., Director, Applications, Efficient Power Conversion

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Categories: Articles
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