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Alex Lidow, CEO and co-founder of EPC, talks with Alix Palutre of Power Systems Design on a new family of eGaN FETs that has superior performance, smaller size, high reliability, and a low price point. With this announcement, the last barrier to the widespread adoption of GaN transistors as silicon MOSFET replacements has fallen.
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Power Systems Design
April 29, 2015
New family of eGaN power transistors offer superior performance, smaller size, and high reliability…at the price of a MOSFET.
EL SEGUNDO, Calif.— April 2015 — Efficient Power Conversion Corporation (EPC) announces the 60 V EPC2035 and 100 V EPC2036 eGaN power transistors designed to compete in price, while outperforming silicon. Price, the last barrier to widespread adoption of GaN transistors as silicon MOSFET replacements, has fallen. These products demonstrate that gallium nitride can displace silicon semiconductors and drive the industry back onto the Moore’s Law growth curve.
Alex Lidow, the CEO of Efficient Power Conversion has made it his life’s work to prolong the lifespan of Moore’s Law. How? As Intel and others have found, traditional chip technology which relies on silicon is approaching a ceiling — pretty soon, somebody is going to make a silicon chip that is as cheap and powerful as that material allows. Lidow says he’s found a semiconducting material that is superior to silicon in many ways: gallium nitride (GaN). Both in laboratories and in practice, GaN chips have outperformed silicon in a number of use cases and are also cheaper to manufacture, ...
“Moore’s Law is morphing into something that is about new materials,” said Alex Lidow, a semiconductor industry veteran and CEO of Efficient Power Conversion (EPC).
EPC is making a possible silicon replacement, gallium nitride (GAN), which is a better conductor of electrons, giving it performance and power-efficiency advantages over silicon, Lidow said. GAN is already being used for power conversion and wireless communications, and could make its way to digital chips someday. “For the first time in 60 years there are valid candidates where it’s about superior material rather than smaller ...
Moore’s predictions became a self-fulfilling prophecy. The computing power of chips not only did double every 24 months, they had to double every 24 months or the tech industry — and the economy at large — would suffer dire consequences, stifling innovation and economic advancement.
April 17, 2015
Chip advances have powered one technology revolution after another: PCs, the Internet, smartphones, smartwatches and, soon, self-driving cars.
One company betting its future on III-V materials is Efficient Power Conversion, a 34-person startup led by Chief Executive Alex Lidow. EPC already is seeing steady revenue growth from devices that incorporate a III-V layer made of gallium nitride (GaN). In 2016 or 2017 he expects to adapt the gallium nitride manufacturing process to work for the logic circuits that do the thinking in computer processors. Because of gallium nitride's electrical ...
With the new 100 V EPC2104 eGaN®half bridge, a system efficiency of a complete buck converter using the EPC2104 is greater than 97% at 22 A switching at 300 kHz, and approaching 97% at 22 A when switching at 500 kHz, achieved when converting from 48 V to 12 V.
EL SEGUNDO, Calif. — April 2015 — EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the ...
New EPC2029 eGaN® power transistor extends EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines.
EL SEGUNDO, Calif.—April 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of an eGaN FET designed with a wider pitch connection layout. The first in a new family of “Relaxed Pitch” devices, the EPC2029 80 V, 31 A eGaN FET features a 1 mm ball pitch. The wider pitch allows for ...
Alex Lidow is interviewed by Kathleen Hays and Vonnie Quinn, on The Bloomberg Advantage Podcast, where they discuss the advantages of GaN over silicon and the fact Moore’s Law is alive and well in the world of power semiconductor technology.
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Dean Takahashi at VentureBeat profiles Alex Lidow. Silicon chips have had a decades-long run as the foundation for modern electronics. But a new kind of chip, based on the compound material gallium nitride (GaN), promises to unseat silicon because it has higher performance, less power consumption, and lower cost.
April 2, 2015