News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

Efficient Power Conversion (EPC) Introduces Eighth Brick DC-DC Power Converter Demonstration Board Featuring (eGaN®) FETs

EPC9102 showcases the performance that can be achieved using the EPC2001 eGaN FETs and the LM5113 eGaN FET driver from Texas Instruments EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9102, a fully functional eighth brick converter. This board is a 36 V – 60 V input to 12 V output, 375 kHz phase-shifted full bridge (PSFB) eighth brick converter with 17 A maximum output current. The EPC9102 uses the 100 V EPC2001 eGaN FETs in conjunction with the recently introduced LM5113 100V half-bridge gate driver from Texas ... Read more
Categories: Press Releases

Dr. David Reusch Joins Efficient Power Conversion (EPC) as Director Applications Engineering

Dr. Reusch will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems EL SEGUNDO, Calif.—May 2012 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. David Reusch has joined the EPC engineering team as Director, Applications Engineering. As a member of the EPC applications team, Dr. Reusch’s focus will be on designing lower loss and higher power density benchmark circuits that demonstrate the benefits of using gallium nitride ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation CEO Alex Lidow to speak at Credit Suisse "Future of Semiconductors" investor conference

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) CEO Alex Lidow will speak at the private Credit Suisse investor conference in San Francisco on Tuesday, May 22, at 10:00 a.m. Pacific time. Dr. Lidow will discuss the growing market for gallium nitride transistors with a focus on EPC’s eGaN® FET technology and products. As a displacement technology, GaN FETs can be used in an array of current MOSFET applications in addition to enabling new high volume applications, such as wireless power and envelope tracking, a method for significant energy ... Read more
Categories: Press Releases
RSS

Archive