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eGaN FETs for Class A RF Amplifiers

High frequency enhancement mode transistors, such as the EPC8000 series eGaN® FETs from EPC, have been widely available since September 2013 and enable simplified designs at RF frequencies. In this installment, we present the RF characteristics of the EPC8000 series devices and show their implementation in a pulsed class A amplifier. The amplifier is pulsed to allow operation within the thermal operating limits of the device, since RF device power dissipation is typically on the same order of magnitude as the RF power delivered, unlike switching devices, such as the EPC8000 series, ... Read more
Categories: Articles

GaN manufacturing leverages the installed silicon supply chain

Hundreds of billions of dollars have been spent to make the silicon technology supply chain incredibly efficient. How can emerging, high performance GaN transistors compete against this huge installed base of silicon-based production? Simple, the production of GaN transistors leverages the installed silicon supply chain, which significantly lowers the cost of GaN transistors!

Power Systems Design
By Alex Lidow, Ph.D.
May 27, 2014

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Categories: Articles

Efficient Power Conversion (EPC) Introduces Plug and Play 97% Efficient Half-Bridge Converter DrGaNPLUS Evaluation Board Featuring Gallium Nitride Transisto

DrGaNPLUS EPC9202 100 V, 10 A board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors EL SEGUNDO, Calif.— May 2014 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, Efficient Power Conversion Corporation (EPC) introduces DrGaNPLUS evaluation boards. These boards are proof-of-concept designs that integrate all necessary components of a half-bridge circuit into a single, extremely small ... Read more
Categories: Press Releases

IEEE Power Electronics Society (PELS) Webinar, “GaN Transistors – Crushing Silicon in Wireless Energy Transfer”

On June 4 IEEE PELS will offer a webinar by Alex Lidow and Michael de Rooij discussing the contribution of eGaN® power transistors to increasing efficiency in wireless power transfer systems. EL SEGUNDO, Calif.— May 2014 — Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT). In this webinar eGaN FETs are compared with MOSFETs in highly resonant wireless energy transfer using class-E, ... Read more
Categories: Press Releases

EPC to Present Gallium Nitride (GaN) Technology for Envelope Tracking Power Supplies, High Efficiency Wireless Power Transfer and High Frequency Buck Converters at the 2014 PCIM Europe Conference

At PCIM Europe conference, EPC’s CEO and applications experts will demonstrate the superiority of GaN transistors compared to silicon power MOSFETs in a wide variety of applications. EL SEGUNDO, Calif. — May, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting three application-focused technical presentations at PCIM Europe. The conference will be held in Nuremberg, Germany from May 20th through the 22th. Participants attending EPC sessions will learn about ... Read more
Categories: Press Releases

Performance Evaluation of Enhancement-Mode GaN Transistors in Class-D and Class-E Wireless Power Transfer Systems

The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article, EPC will focus on loosely coupled coils, highly-resonant wireless solutions suitable for the A4WP standard operating at either 6.78 MHz or 13.56 MHz unlicensed Industrial, Scientific and Medical (ISM) bands.

Bodo’s Power Systems
By Alex Lidow, Ph.D. and Michael De Rooij, Ph.D
May, 2014

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Categories: Articles
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