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Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors

Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors
eGaN®power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable high power density converters. EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150°C and pulsed currents capabilities of 260 A (150 V EPC2033) and 140 A (EPC2034). Applications include DC-DC converters, synchronous ... Read more
Categories: Press Releases

GaN Trends and Applications

GaN Trends and Applications
Consumers all want new electronic gadgets to be innovative, smaller, lighter, speedy and saving more energy. To fulfill these wants, GaN technology has brought about a new era of innovations in equipping engineers with the latest generation of gallium nitride (GaN) devices that are faster, smaller, more energy-efficient, and at lower prices. GaN gives a new life to existing solutions by reviving Moore’s Law, replacing existing silicon devices while creating unexpected industry opportunities for new applications in our daily lives. These new applications include 5G wireless ... Read more
Categories: Articles

IDT and EPC Collaborate to Integrate Gallium Nitride and Silicon for Faster, Higher Efficiency Semiconductor Devices

IDT and EPC Collaborate to Integrate Gallium Nitride and Silicon for Faster, Higher Efficiency Semiconductor Devices

Integrated Device Technology, Inc. (IDT®) (NASDAQ: IDTI) today announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency. Under their collaboration, the companies will explore integrating EPC’s eGaN® technology with leading IDT solutions.

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Categories: Press Releases

Efficient Power Conversion (EPC) Expands Wide Pitch eGaN FET Family Enabling High Current in Small Footprint

Efficient Power Conversion (EPC) Expands Wide Pitch eGaN FET Family Enabling High Current in Small Footprint
New eGaN® power transistors extend EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to ... Read more
Categories: Press Releases

Gallium Nitride Power Transistors Priced Cheaper Than Silicon

Gallium Nitride Power Transistors Priced Cheaper Than Silicon
Last week, El Segundo, Calif.-based Efficient Power Conversion, announced that its offering two types of power transistors made from gallium nitride that it has priced cheaper than their silicon counterparts. “This is the first time that something has really been higher performance and lower cost than silicon,” CEO Alex Lidow says. “Gallium nitride has taken the torch and is now running with it.” IEEE Spectrum May 8, 2015 Read article Read more
Categories: Articles
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