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EPC Joining PCIM Asia 2018 for Knowledge Exchange with Power Management Design Engineers on Wireless Power and Light Distancing and Ranging (LiDAR) Applications

EPC Joining PCIM Asia 2018 for Knowledge Exchange with Power Management Design Engineers on Wireless Power and Light Distancing and Ranging (LiDAR) Applications
EL SEGUNDO, Calif. — June 22, 2018 -- Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, will meet with design engineers in power management in Shanghai, China, for knowledge exchanges on solutions using a synchronous FET Class E rectifier for over 30 W highly-resonant wireless power receivers, and a kilowatt laser driver with 120 A, sub-10 nanosecond pulses in < 3 cm2 using eGaN FET. Meet EPC experts on power management at PCIM Asia Exhibition and Conference on June 26th, 2018 ... Read more
Categories: Press Releases

How eGaN FETs power LIDAR

How eGaN FETs power LIDAR

LIDAR is presently a subject of great interest, primarily due to its widespread adoption in autonomous navigation systems for vehicles, robots, drones, and other mobile machines. eGaN devices are one of the main factors in making affordable, high performance LIDAR possible in a small form factor thus further fueling the LIDAR revolution.

EDN
By John Glaser
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Categories: Articles

The Growing Ecosystem for eGaN FET Power Conversion

The Growing Ecosystem for eGaN FET Power Conversion
In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs. Power Systems Designs By Edward A. Jones, Michael de Rooij, and David Reusch Read article Read more
Categories: Articles

eGaN FET-Based Synchronous Rectification

eGaN FET-Based Synchronous Rectification
As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN® FETs when operated as a “body diode” and outline their relative advantages and ... Read more
Categories: Articles

jjPLUS and Efficient Power Conversion (EPC) Showcasing Wide Surface-Area, Multiple-Device Wireless Power Solutions at InnoVEX 2018

jjPLUS and Efficient Power Conversion (EPC) Showcasing Wide Surface-Area, Multiple-Device Wireless Power Solutions at InnoVEX 2018
jjPLUS and EPC, both members of the AirFuel Alliance, to show how large area wireless power surfaces can be designed following the most advanced AirFuel™ Resonant standard. Go for a wirelessly powered home and office! EL SEGUNDO, Calif. — June 2018 — jjPLUS Corporation, a design manufacturer of advanced wireless communication and wireless power embedded solution company, will demonstrate the next-generation magnetic resonance wireless power transfer (WPT) technology at InnoVEX 2018 in Taipei. Joining jjPLUS will be its technology partner − Efficient Power ... Read more
Categories: Press Releases
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