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Single Amplifier for a Multi-mode Capable Wireless Power System

Single Amplifier for a Multi-mode Capable Wireless Power System

The proliferation of wireless power products and multitude of wireless power standards for mobile applications is leading to consumer confusion and hindering adoption. This article discuss a multi-mode capable amplifier topology capable of operation at both high (6.78 MHz) and low (100 kHz – 315 kHz) frequencies.

By: Michael de Rooij, Ph.D.
EEWeb – Wireless & RF Magazine
August, 2015
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Categories: Articles

Practical Layout Techniques to Fully Extract the Benefits of eGaN FETs

Practical Layout Techniques to Fully Extract the Benefits of eGaN FETs
The trend for electronics is to continually push towards miniaturization while increasing performance. With silicon MOSFET technology fast approaching its theoretical limit, enhancement mode gallium nitride (eGaN®) FETs from EPC have emerged to offer a step change improvement in power FET switching performance, enabling next generation power density possibilities by decreasing size and boosting efficiency. This article will explore the recommended layout techniques required to fully extract the benefits of EPC’s eGaN FETs. By: Ivan Chan & David Reusch, Ph.D. EEWeb ... Read more
Categories: Articles

Efficient Power Conversion (EPC) Launches New eGaN FET Enabling Big Power in a Small Footprint at a low Price for Wireless Power Transfer and Other High Frequency Applications

Efficient Power Conversion (EPC) Launches New eGaN FET Enabling Big Power in a Small Footprint at a low Price for Wireless Power Transfer and Other High Frequency Applications
New EPC2039 eGaN® FET offers superior performance, big power in an extremely small package at a very affordable price. EL SEGUNDO, Calif. — August 2015 — Efficient Power Conversion Corporation (EPC) announces the EPC2039 power transistor, a high power density enhancement-mode gallium nitride (eGaN®) device. The EPC2039 is an extremely small, 1.82 mm2, 80 VDS, 6.8 A power transistor with a maximum RDS(on) of 22 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance in power conversion systems due to its high switching capabilities ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating Over 2 MHz, Ideal for Class-D Audio

Efficient Power Conversion (EPC) Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating Over 2 MHz, Ideal for Class-D Audio
EPC2106 GaN power transistor offers power systems designers a solution that switches over 2 MHz resulting in no interference with the AM band, reducing costs for filtering, thus making it ideal for low distortion Class-D audio. EL SEGUNDO, Calif. — August 2015 — EPC announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, ... Read more
Categories: Press Releases

Wireless Charging Metrics Debated

Wireless Charging Metrics Debated
Wireless charging may have a standards battle to contend with, but there’s also a major a measurement problem. The quest for convenient living and energy conservation poses a ‘Ying/Yang’ dilemma living in the age of electronics. This is certainly the case with wireless power transfer technology. This rapidly emerging technology has the promise of “cutting the cord” and displacing the need for AC/DC wall adapters and perhaps eventually wall sockets. The question now is; will wireless power increase our carbon footprint by being less efficient than the ... Read more
Categories: Articles
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