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Darnell Power forum looks at GaN transistor technology

The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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Categories: GaN Market News

Driving eGaN™ Transistors for Maximum Performance

The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements. By Johan Strydom and Alex Lidow September, 2010 Read the article Read more
Categories: Articles

eGaN™-Silicon Power Shoot-Out: Part 1 Comparing Figure of Merit (FOM)

One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

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Categories: Articles
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