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Efficient Power Conversion (EPC) Blurs the Line Between Power and RF Transistors with Family of Gallium Nitride Transistors Capable of Amplification into the Multiple GHz Range

Power systems and RF designers now have access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon. EL SEGUNDO, Calif. — September 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products. Cutting new ground for power transistors, these third generation devices have switching transition speeds in ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN FET Family with 150 Volt Power Transistor

EPC2018 gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion and Class D Audio applications. EL SEGUNDO, Calif. – September 2013 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2018 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors. The EPC2018 is a 5.76 mm2, 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with 100 Volt, 16 milliohm Power Transistor

EPC2016 gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion. EL SEGUNDO, Calif. – September, 2013- Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2016 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors. The EPC2016 is a 3.36 mm2, 100 VDS, 11 A device with a maximum RDS(on) of 16 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), ... Read more
Categories: Press Releases
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