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Alex Lidow, CEO, presents at Innovation Technology Conference

 View video of EPC's CEO, Alex Lidow as he presents "eGaN - Starting from the GaN"  at the Innovation Technology Conference in China. = 3 check for Flash plugin in plugin array var flashVer = -1; if (navigator.plugins != null && navigator.plugins.length > 0) { if (navigator.plugins["Shockwave Flash 2.0"] || navigator.plugins["Shockwave Flash"]) { var swVer2 = navigator.plugins["Shockwave Flash 2.0"] ? " 2.0" : ""; var flashDescription = navigator.plugins["Shockwave Flash" + swVer2].description; var descArray = ... Read more
Categories: Interviews

High Step-Down Ratio Buck Converters With eGaN Devices

The intermediate bus architecture (IBA) is currently the most popular power system architecture in computing and telecommunications equipment. It typically consists of a +48 V system power distribution bus that feeds on-board bus converters, which in turn supply power to nonisolated, dc-dc converters. These nonisolated converters generate the low supply voltages required to power the various logic circuits. Because of their proximity to the circuits they power, these converters are commonly referred to as point-of-load converters (POLs). By Johan Strydom, EPC, El Segundo, Calif. and Bob ... Read more
Categories: GaN Market News
Tags: POLIBS

Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ Products Win Electronic Design News (EDN) China Innovation Award

EL SEGUNDO, Calif-November 18, 2010 -Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been awarded the “Editor’s Choice Award” in the power device and module segment of the 2010 EDN China Innovation Awards. "Enhancement-mode eGaN by Efficient Power Conversion Corporation was honored with Editor's Choice Award by EDN China Innovation Award's panel of judges based on the online voting by the Chinese design engineers. It is the best-recognized product yet to be fully ... Read more
Categories: Press Releases
Tags: Awards

Driving eGaN™ FETs Both gate and Miller capacitances are significantly lower

As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products. By Johan Strydom PhD, Director of Application Engineering EPC Bodo’s Power Systems November, 2010 Read the article Read more
Categories: Articles

Device Models for Enhancement Mode GaN Transistors from Efficient Power Conversion Corporation

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available updated device models for all of its enhancement mode gallium nitride (eGaN™) transistors on its web site. These updates improve the robustness of the models without changing the core equations. Performance predictions with the new models will be consistent with previous versions of EPC SPICE models. TSPICE, PSPICE, LTSPICE, and Spectre device models are provided to help designers of advanced eGaN-based power conversion circuits and systems ... Read more
Categories: Press Releases

Darnell Power forum looks at GaN transistor technology

The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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Categories: GaN Market News

Driving eGaN™ Transistors for Maximum Performance

The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements. By Johan Strydom and Alex Lidow September, 2010 Read the article Read more
Categories: Articles

eGaN™-Silicon Power Shoot-Out: Part 1 Comparing Figure of Merit (FOM)

One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

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Categories: Articles

How2 Get the Most Out of GaN Power Transistors

Thirty years of silicon power-MOSFET development has taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN (eGaN) transistors. This article explains why eGaN devices are easy to use, describing how they operate and their similarities and differences versus power MOSFETs. By Johan Strydom How2Power June, 2010 Read the article Read more
Categories: Articles

GaN – the New Frontier for Power Conversion

Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.

By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010

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Categories: Articles

Can Gallium Nitride Replace Silicon?

For the past three decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market. By Alex Lidow, PhD Power Electronics Europe Issue 2, 2010 Read the article Read more
Categories: Articles

Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9002 development board

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9002 development board to make it easier for users to get started designing with EPC’s 100V enhancement-mode GaN transistor products. The EPC9002 development board is a 50 V maximum input voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC1001 100V GaN Power Transistor. The purpose of this development board is to simplify the evaluation process of the EPC1001 GaN power transistor by including all the critical ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) today announced that the company has made available on its web site SPICE models for all of its enhancement mode GaN transistors.

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available on its web site SPICE models for all of its enhancement mode GaN transistors.

TSPICE, PSPICE, and LTSPICE device models have been developed to help the designer of advanced GaN-based power conversion circuits and systems understand the value of this new power transistor family and reduce their time-to-market with benchmark products. These free downloads are available at:

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Categories: Press Releases
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