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Gallium nitride based devices set to bring substantial boost to power efficiency

Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors. But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet. By: Graham Pitcher New Electronics December 13, 2011 Read the article Read more
Categories: GaN Market News

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives EDN China Innovation Leading Product Award

EL SEGUNDO, Calif. – December, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces today that it has been recognized with a Leading Product Award by EDN China Innovation Award 2011 in its Power Device and Module category. In its seventh year, the EDN China Innovation Award 2011 is the benchmark event for recognizing product innovation by China’s electronics design engineers and managers. “It is an honor to receive this recognition as an industry leading product from EDN China. The EPC2010 is one member of our family of eGaN FETs being adopted by ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Buck Power Conversion Demonstration Board Featuring (eGaN®) FETs

EPC9101 demonstrates size reduction and efficiency enhancement for buck power conversion achieved using high frequency switching eGaN power transistors EL SEGUNDO, Calif.—October 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9101, a fully functional buck power conversion demonstration circuit. This board is an 8 V-19 V input to 1.2 V, 18 A maximum output current, 1MHz buck converter. It uses the EPC2014 and EPC2015 eGaN FETs in conjunction with the recently introduced National LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Achieves ISO 9001:2008 Certification for Quality Management

EPC has received ISO certification for the design, development, marketing and sales of gallium nitride power transistors and power management devices EL SEGUNDO, Calif. – September 2011 - Efficient Power Conversion Corporation (www.epc-co.com) the leader in energy-efficient enhancement mode gallium nitride (eGaN®) power transistors used in power conversion applications, has received the International Organization for Standardization ISO 9001:2008 certification for its quality management system. The ISO standards are published by the International Organization for ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces EPC9006 Development Board Featuring Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9006 facilitates rapid design of high frequency switching power conversion systems based on the 100 V EPC2007 with a ready-made and easy-to-connect development board including well-documented engineering support materials. EL SEGUNDO, Calif.—September, 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9006 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with Second Generation 100 Volt, 30 milliohm Power Transistor

EPC2007 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package. EL SEGUNDO, Calif. – September, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2007 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2007 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free. The EPC2007 FET is a 1.87 mm2, 100 VDS, 6 A device with a maximum RDS(ON) of 30 milliohms. This second generation eGaN ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board for Systems Using Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9005 facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 with a ready-made and easy-to-connect development board including well-documented engineering support materials. EL SEGUNDO, Calif.—August 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9005 development board to make it easier for users to start designing with a 40 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with Second Generation 40 Volt, 16 milliohm Power Transistor

EPC2014 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package. EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2014 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2014 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free. The EPC2014 FET is a 1.87 mm2, 40 VDS, 10 A device with a maximum RDS(ON) of 16 milliohms with 5 V applied to the gate. ... Read more
Categories: Press Releases

EPC9004 Named “Product of the Month” by Bodo’s Power Systems®

The EPC9004 has been recognized by Bodo’s Power Systems as the Product of the Month in the September, 2011 issue of the magazine. The EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board.

Bodo's Power Systems
September, 2011

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Categories: GaN Market News

Efficient Power Conversion Corporation (EPC) Expands Industry-Leading Family of Enhancement Mode Gallium Nitride (eGaN®) FETs with Second Generation 200 Volt, 100 milliohm Power Transistor

EPC2012 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package. EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2012 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2012 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free. The EPC2012 FET is a 1.6 mm2 200 VDS device with a maximum RDS(ON) of 100 milliohms with 5 V applied to the gate. This eGaN ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board for Fast Development of Power Conversion Circuits and Systems Using Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board and well-documented engineering support materials. EL SEGUNDO, Calif.—August 2011 — Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9004 development board to make it easier for users to start designing with EPC’s 200 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power ... Read more
Categories: Press Releases

Dedicated Driver Squeezes Optimal Performance Out Of Enhancement-Mode GaN FETs

We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM. By Ashok Bindra How2Power June, 2011 Read the article Read more
Categories: GaN Market News

National Semiconductor Introduces Industry’s First 100V Half-bridge Gate Driver for Enhancement-mode Gallium-Nitride Power FETs

National Semiconductor Corp. (NYSE:NSM) today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Introduces Industry-Leading Second Generation 200 Volt Enhancement Mode Gallium Nitride (eGaN®) Power Transistor

EPC2010 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package. EL SEGUNDO, Calif. – June 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2010 as the newest member of EPC’s second-generation enhanced performance eGaNfield effect transistor (FET) family. The EPC2010 is environmentally friendly, being both lead-free and RoHS-compliant (Restriction of Hazardous Substances). The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. This ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board for Fast Development of Power Conversion Circuits and Systems Using Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9003 facilitates rapid design of high frequency switching power conversion systems based upon the 200 V EPC2010 with ready-made, easy to connect development board and well-documented engineering support materials. EL SEGUNDO, Calif.—June 2011 — Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9003 development board to make it easier for users to start designing with EPC’s 200V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power over ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® Products Wins Prestigious EE Times Annual Creativity in Electronics (ACE) Award for Energy Efficiency Technology

EL SEGUNDO, Calif-May 4, 2011 — Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN®) power FETs has won the Energy Technology Award issued as part of the prestigious EE Times Annual Creativity in Electronics (ACE) Awards. These awards celebrate the creators of technology who demonstrate leadership and innovation in the global industry and shape the world we which we live. “We are very proud to have won the ACE Award. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a ... Read more
Categories: Press Releases
Tags: Awards

Microsemi announces partnership with EPC

Microsemi is working with Efficient Power Conversion (EPC) www.epc-co.com in the development of a complete line of high performance FETS for high reliability space and military applications. A jointly researched paper entitled "Enhancement Mode Gallium Nitride Characteristics Under Long Term Stress" will be presented at the Government Microcircuit Applications and Critical Technology Conference (GOMAC), March 21-24, 2011 in Orlando, Florida. The study covers the reliability testing results and demonstrates the stability of the devices at temperature and under radiation ... Read more
Categories: Press Releases
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