News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

GaN-on-Si Based FETs Foster New Applications

Although, for the last few years, there has been a lot of talk about gallium nitride(GaN) based power transistors displacing the entrenched silicon MOSFETs, it might take some time before the emerging gallium nitride on silicon (GaN-on-Si) based power FETs enter the mainstream power conversion space. However, in the meantime, a handful of emerging applications are poised to tap the benefits of this promising power technology. Besides commercial availability with high reliability, there are a number of unique GaN characteristics that are fostering these new applications. Ashok ... Read more
Categories: GaN Market News

Efficient Power Conversion Corporation (EPC) and EE Times Taiwan Announce New Design Contest

Innovations are engineers’ intellectual properties. To promote and support engineers’ innovative designs with gallium nitride FETs, EE Times Taiwan and Efficient Conversion Corporation join hands in staging the “GaN Transistors for Efficient Power Conversion – Design Contest”. The aim is to provide an exchange platform for participating engineers to use ANY EPC’s eGaN FETs in designing: a. a DC-DC power conversion solution OR b. Class D or Class E audio solution Any participant can submit their own or their teams’ design solution in ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Publishes Chinese Edition of Gallium Nitride (GaN) Transistor Textbook

Written by industry experts, “GaN Transistors for Efficient Power Conversion” provides both theory and applications for gallium nitride transistors EL SEGUNDO, Calif. – November 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a Simplified Chinese edition of its gallium nitride transistor textbook, “GaN Transistors for Efficient Power Conversion”. This textbook provides power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives EDN China Innovation Leading Product Award 2012

SEGUNDO, Calif. – November, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that it has been recognized with a Leading Product Award by EDN China Innovation Award 2012 in its Power Device and Module category. In its eighth year, the EDN China Innovation Award 2012 is the benchmark event for recognizing product innovation by the voting of electronics design engineers and managers worldwide. “It is an honor to receive this recognition as an industry leading product from EDN China magazine. The EPC2012 is one member of our family of eGaN FETs being ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Announces Upgrade of Development Boards Featuring Enhancement Mode Gallium Nitride (eGaN) FETs Using Dedicated GaN FET Gate Drivers from Texas Instruments

EPC9003 and EPC9006 demonstrate the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials. EL SEGUNDO, Calif.—October, 2012 — Efficient Power Conversion Corporation (EPC) today announces the availability of two development boards, the EPC9003 and the EPC9006, both featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). These boards demonstrate how the recent introductions of IC gate drivers, optimized for eGaN FETs, make the task of transitioning from ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Named to EE Times Silicon 60 List of Emerging New Technology Startups

EL SEGUNDO, Calif. – October, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership. “It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics ... Read more
Categories: Press Releases
Tags: Awards

eGaN FET-Silicon Power Shoot-Out Part 11: Optimizing FET On-Resistance

So far in this series, significant efforts have been made to show the performance improvements that can be achieved with eGaN® FETs over silicon MOSFETS in both hard and soft switching applications. In every case, eGaN FETs showed improvement over MOSFETs. In this volume of the eGaN FET-Silicon power shoot-out series, the die size optimization process is discussed and an example application is used to show specific results. By Johan Strydom, Ph.D., Vice President of Applications, EPC Power Electronics Technology Read the article Read more
Categories: Articles

Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives Top 10 Power Products Award from Electronic Products China

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives Top 10 Power Products Award from Electronic Products China EL SEGUNDO, Calif. – September, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that its EPC9102 has been recognized by Electronic Products China with a Top 10 Power Products Award – Technology Breakthrough Award. Read more
Categories: Press Releases

eGaN FET Safe Operating Area

In this article, we show that high electron densities and very low temperature coefficients give the eGaN FET major advantages over the power MOSFET needed for today’s high performance applications. High electron density yields superior RDS(ON), while positive temperature coefficients inhibit hot spot generation within the die, resulting in superior Safe Operating Area capabilities. By Yanping Ma, Ph.D., Director of Quality, EPC Bodo's Power Systems Read the article Read more
Categories: Articles

Efficient Power Conversion (EPC) eGaN FETs Offer Superior Safe Operating Area Capabilities

eGaN FETs exhibit a positive temperature coefficient across their entire operating range, thus overcoming a performance limitation of the silicon MOSFET.

EL SEGUNDO, Calif.—September 2012 — Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for their entire product line of eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.

Read more
Categories: Press Releases

eGaN® FET-Silicon Power Shoot-Out Part 10: High Frequency Resonant Converters

The advantages provided by eGaN FETs in hard switching isolated and non-isolated applications have been addressed previously. Here, we demonstrate the ability of the eGaN FET to improve efficiency and output power density in a soft switching application, compared to what is achievable with existing power MOSFET devices. By David Reusch, Ph.D., Director of Applications, EPC Power Electronics Technology Read the article Read more
Categories: Articles

Efficient Power Conversion (EPC) Announces a WiTricity™ Demonstration System Featuring High Frequency Gallium Nitride (eGaN®) FETs

Superior switching speeds of EPC’s eGaN FETs increases the efficiency of power electronics for highly resonant wireless power transfer. EL SEGUNDO, Calif.—August 13, 2012 — Efficient Power Conversion Corporation (EPC) today announced a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN FETs from EPC are an ideal solution for these systems because of their ability to operate efficiently at high frequency, voltage, and power. Highly resonant wireless power transfer was invented by ... Read more
Categories: Press Releases

Are GaN Transistors Ready for Prime Time?

Gallium Nitride transistors have been available since Eudyna and Nitronex first introduced depletion-mode RF transistors in about 2005. Since then many new companies have entered the field with both RF transistors (e.g. RFMD, Triquint, Cree, Freescale, Integra, HRL, M/A-COM, and others), and transistors designed to replace power MOSFETs in power conversion applications (e.g. Transphorm, International Rectifier, GaN Systems, microGaN, and Efficient Power Conversion). This article discusses if this ground swell of activity mean that GaN transistors are ready to replace power MOSFETs, and, if ... Read more
Categories: Articles

eGaN® FET-Silicon Power Shoot-Out Part 9: Wireless Power

Wireless power applications are gaining popularity in many commodity products such as mobile phones chargers. Enhancement mode gallium nitride transistors offer an alternative to MOSFET technology as they can switch fast enough to be ideal for wireless power applications. This article focuses on experimental evaluation of an induction coil wireless energy system using eGaN FETs operating at 6.78 MHz designed to be suitable for multiple 5 W USB based charging loads. By Johan Strydom, Ph.D., Vice President of Applications, EPC and Johan Strydom, Ph.D., Vice President of Applications, ... Read more
Categories: Articles

Eighth Brick DC-DC Converter Using Efficient GaN Transistor

In this article, we show that using GaN Transistors such as Efficient Power Conversion’s eGaN® FETs can improve the efficiency of isolated eighth brick DC-DC converters. This type of power converters is used extensively in mainframes, servers and telecommunication systems, and is available in a variety of sizes, output power capability, and input and output voltage ranges. Its modularity, power density, reliability and versatility have simplified the isolated power supply market. By Johan Strydom, Ph.D., Vice President of Applications, EPC Bodo’s Power Systems Read ... Read more
Categories: Articles

Efficient Power Conversion (EPC) Introduces Eighth Brick DC-DC Power Converter Demonstration Board Featuring (eGaN®) FETs

EPC9102 showcases the performance that can be achieved using the EPC2001 eGaN FETs and the LM5113 eGaN FET driver from Texas Instruments EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9102, a fully functional eighth brick converter. This board is a 36 V – 60 V input to 12 V output, 375 kHz phase-shifted full bridge (PSFB) eighth brick converter with 17 A maximum output current. The EPC9102 uses the 100 V EPC2001 eGaN FETs in conjunction with the recently introduced LM5113 100V half-bridge gate driver from Texas ... Read more
Categories: Press Releases

Dr. David Reusch Joins Efficient Power Conversion (EPC) as Director Applications Engineering

Dr. Reusch will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems EL SEGUNDO, Calif.—May 2012 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. David Reusch has joined the EPC engineering team as Director, Applications Engineering. As a member of the EPC applications team, Dr. Reusch’s focus will be on designing lower loss and higher power density benchmark circuits that demonstrate the benefits of using gallium nitride ... Read more
Categories: Press Releases
RSS
12

Archive