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Efficient Power Conversion Corporation (EPC) Now Included in National Instruments Multisim 13.0 Enhanced SPICE Circuit Simulation and Design Software

EPC component models have been included in National Instruments’ Multisim 13.0, which is now available to thousands of engineers to improve power system efficiency, reduce final product size, reduce development cost in their power conversion system designs. EL SEGUNDO, Calif. — December 2013 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that its enhancement mode gallium nitride transistors (eGaN® FETs) SPICE models have been included in the latest version of National ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® Power Transistors Recognized as EDN Magazine Hot 100 Product for 2013

EPC8000 family of gallium nitride FETs give power systems and RF designers access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon. EL SEGUNDO, Calif. — December 2013 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that its EPC8000 family of high frequency eGaN FETs has been recognized with inclusion in the EDN list of 100 Hot Products for 2013. “We are very excited that EDN, an ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Market-leading Development Board Featuring eGaN® FETs Receives Industry Awards in China

Award winning EPC9005 development board facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 eGaN FET EL SEGUNDO, Calif. – November 2013 - Efficient Power Conversion Corporation (www.epc-co.com; www.epc-co.com.cn) announces that its EPC9005 development board has been recognized with two industry awards in China; namely, Optimized Development Award of the Top 10 Power Products Award 2013 presented by Electronics Product China and Leading Product Award of China Innovation Award 2013 presented by EDN China magazine. “It is ... Read more
Categories: Press Releases

Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN® FETs Delivers High Quality Audio Performance in Space Saving Design

EPC9106 Class D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound. EL SEGUNDO, Calif. — November 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 Ω Class D audio amplifier. This demonstration board uses a Bridge-Tied-Load (BTL) design, composed of four ground-referenced half-bridge output stages, which allows scalability and expandability ... Read more
Categories: Press Releases

Package Considerations for High Frequency Power Conversion Devices

Power conversion at switching frequencies of 10 MHz and above requires both high-speed transistors and high frequency capable packaging. eGaN FETs have demonstrated their ability to improve high frequency power conversion compared with the aging power MOSFET by providing unmatched device performance as well as packaging.

Bodo’s Power Systems
Guest Editorial: Alex Lidow
November, 2013

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Categories: Articles

Efficient Power Conversion (EPC) Introduces Family of Commercial High-Lead Enhancement Mode Gallium Nitride (eGaN®) FETs

Commercial high-lead versions of EPC’s popular enhancement mode gallium nitride (eGaN) FETs, the EPC2801, EPC2815, and EPC2818, are now available. EL SEGUNDO, Calif. — October 2013 — (www.epc-co.com) Efficient Power Conversion Corporation (EPC) introduces devices with a high-lead solder termination ideal for applications requiring higher temperature solder. The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% lead, 5% tin) solder terminations. The EPC2801 is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate. The EPC2815 ... Read more
Categories: Press Releases

Enhancing the inefficiency of an RF power amp: The envelope tracking (ET) system

In this EDN article Steve Taranovich explores the envelope tracking system as a potential solution to the notoriously inefficient wideband power amplifiers (PAs) used I wireless telecom and other base station transmitters. An ET solution implementing high speed eGaN FETs in a multi-phase buck converter is explored. http://www.edn.com/design/power-management/4422469/Enhancing-the-inefficiency-of-an-RF-power-amp--The-envelope-tracking--ET--system Read more
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EPC Addresses Global GaN Power Management Product Demand; Leverages Digi-Key for Global Distribution

Global electronic components distributor Digi-Key Corporation, the industry leader in electronic component selection, availability and delivery, today announced new inventory of Gallium Nitride (GaN) power management products, available for immediate shipment as part of an exclusive global distribution agreement with Efficient Power Conversion (EPC) http://www.digikey.com/us/en/press-release/epc-gan-global-distribution-agreement.html

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Categories: GaN Market News

Efficient Power Conversion (EPC) Introduces Development Board Showcasing 100 V Enhancement Mode Gallium Nitride (eGaN®) FETs in Parallel for High Current Applications

EPC9017 development board features eGaN FETs in parallel operation using optimum layout techniques to increase current capability and efficiency. EL SEGUNDO, Calif.— October, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9017 half bridge development board for high current, high step down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low side (synchronous rectifier) FETs are connected in parallel since they will be conducting for a much longer period compared to the single high side (Control) FET. ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Blurs the Line Between Power and RF Transistors with Family of Gallium Nitride Transistors Capable of Amplification into the Multiple GHz Range

Power systems and RF designers now have access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon. EL SEGUNDO, Calif. — September 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products. Cutting new ground for power transistors, these third generation devices have switching transition speeds in ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN FET Family with 150 Volt Power Transistor

EPC2018 gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion and Class D Audio applications. EL SEGUNDO, Calif. – September 2013 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2018 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors. The EPC2018 is a 5.76 mm2, 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with 100 Volt, 16 milliohm Power Transistor

EPC2016 gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion. EL SEGUNDO, Calif. – September, 2013- Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2016 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors. The EPC2016 is a 3.36 mm2, 100 VDS, 11 A device with a maximum RDS(on) of 16 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Darnell’s Energy Summit

EPC CEO and applications experts will conduct a half-day seminar and technical presentations including an invited plenary session presentation on GaN FET technology and applications. EL SEGUNDO, Calif. — August, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2013. The conference will be held in Dallas, Texas from September 9th through the 12th. This ... Read more
Categories: Press Releases
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