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Panasonic breathes new life into Technics – features GaN for high speed switching

Technics is back. Panasonic has unveiled the first new hi-fi products from the highly-regarded brand in 6 years. The new Reference Class system is made up of three components – a stereo power amp, a network audio control player and a speaker system. The amp uses a JENO Digital Engine to eliminate jitter and nip noise in the bud, and Load Adaptive Phase Calibration (LAPC) for flat amplitude-phase frequency delivery. It features GaN for high speed switching while keeping signal loss low, a proprietary digital link input, analog XLR input, analog RCA input, bi-wiring speaker terminals, ... Read more
Categories: Articles

Profiles in Design: Alex Lidow, Ph.D.

DesignCon 2015’s Thursday (January 29th) keynote speaker will be Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion Corporation (EPC). For most of his career, Alex has focused on improving the efficiency of power conversion in hopes of reducing the environmental impact of energy production and consumption. As an R&D engineer at International Rectifier, he co-invented the HEXFET power MOSFET. The patents from this invention brought in more than $900M. Alex holds numerous additional patents in power semiconductor technology, including basic patents in power MOSFETs as ... Read more
Categories: Articles

WiGaN: eGaN FETs in Wide Load Range High Efficiency Wireless Power

Practical wireless power systems need to address the convenience factor of such systems. Standards such as the A4WP Class 3 have defined a broad coil impedance range that address the convenience factor and can be used as a starting point to compare the performance of the amplifiers. In this installment of WiGaN both the ZVS Class-D and Class-E amplifiers will be tested at 6.78 MHz to the A4WP Class 3 standard.

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Categories: Articles

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling over 87% System Efficiency for a 28 V to 1 V Point of Load Converter at 14 A output.

The EPC2101 GaN power monolithic half bridge offers power systems designers a solution that increases efficiency and power density. For a complete buck converter, system efficiency approaches 87% at 14 A, and over 82% at 30 A when switching at 500 kHz and converting from 28 V to 1 V while reducing the board area occupied by transistors by 50% when compared to a discrete solution. EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, ... Read more
Categories: Press Releases

How to measure the world's fastest power switch

Gallium Nitride (GaN) FETS are poised to replace silicon power devices in voltage regulators and DC-DC power supplies. Their switching speeds are significantly faster and their RDS(on) is lower than silicon MOSFETS. That can lead to higher power efficiency power sources, which is good for all of us. If you're designing power circuits with GaN devices, you need a grasp of the device's switching speed.

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Categories: Articles

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Half Bridge enabling 48 V to 12 V System Efficiency at 20 A output over 97%

EPC2105 GaN half bridge offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 98% at 10 A when switching at 300 kHz and converting from 48 V to 12 V, and 84% at 14 A when switching at 300 kHz and converting from 48 V to 1.0 V. EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. ... Read more
Categories: Press Releases

How to GaN: Generation 4 eGaN FETs – Widening the Performance Gap with the Aging MOSFET

In this installment of the ‘How to GaN’ series we will discuss a new family of eGaN FETs that is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOFET in high frequency power conversion.

EEWeb
By: Alex Lidow
October, 2014

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Categories: Articles

Efficient Power Conversion (EPC) Introduces Wide-Input, 20 Amp GaN-Based Buck Converter Demonstration Board for Telecom, Industrial, and Medical Applications

Efficient Power Conversion (EPC) Introduces Wide-Input, 20 Amp GaN-Based Buck Converter Demonstration Board for Telecom, Industrial, and Medical Applications
EPC9118 demonstrates size reduction and efficiency enhancement for power conversion readily achieved using high frequency switching eGaN® FETs for supply voltages up to 48 V or more. EL SEGUNDO, Calif.—October 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9118, a fully functional buck power conversion demonstration circuit. This board is a 30 V-60 V input to 5 V, 20 A maximum output current, 400 kHz buck converter. It features the EPC2001 and EPC2015 enhancement-mode (eGaN®) field effect transistors (FETs), as well as the LTC3891 buck ... Read more
Categories: Press Releases

Efficient Power Conversion Gallium Nitride (GaN) Experts Release Second Edition Textbook with Power Conversion Applications Focus

GaN Transistors for Efficient Power Conversion” textbook provides both theory and applications for gallium nitride transistors. EL SEGUNDO, CA – October 2014 – Efficient Power Conversion Corporation (EPC) announce the publication of the second edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons. This textbook is designed to provide power system design engineering students, as well as practicing engineers, basic technical and application-focused ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces 300 V Gallium Nitride Power Transistors for High Frequency Applications

EPC2025 GaN power transistor offers power systems designers a 300 V power transistor capable of 2ns rise times for high frequency DC-DC converters and medical diagnostic instruments. EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2025, a 300 V power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, power inverters, and LED lighting. The EPC2025 has a voltage ... Read more
Categories: Press Releases

Podcast: Where engineers trying to learn power GaN get into trouble

Gallium nitride (GaN) is one of the technologies that could well displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices conduct better and switch faster. In this short podcast, Alex Lidow talks about the differences between GaN and silicon power devices.

Power Electronic TIPS
September, 2014

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Categories: Interviews

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling 12 V to 1.2 V Point of Load System Efficiency at 25 A output over 90%

EPC2100 GaN power transistor offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 93% at 10 A, and over 90.5% at 25 A when switching at 500 kHz and converting from 12 V to 1.2 V. EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2100, the first commercially available enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Experts Present Benchmark Performance with Gallium Nitride (GaN) Technology at the 2014 Darnell’s Energy Summit

EPC’s CEO and applications experts will conduct a half-day seminar and several technical presentations, including an invited plenary session presentation, on a multitude of applications enabled by this game-changing technology. EL SEGUNDO, Calif. — September 2014 — Efficient Power Conversion Corporation will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2014. The conference will be held in Richmond, Virginia from September 23th through the 25th. This summit combines efficient power ... Read more
Categories: Press Releases

IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”

On September 3rd IEEE PELS will offer a webinar by Dr. Johan Strydom discussing the contribution of gallium nitride power transistors to meet the demanding system bandwidth requirements of envelope tracking applications. EL SEGUNDO, Calif.— August 2014 — An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 AM (EDT). Discrete GaN power devices offer ... Read more
Categories: Press Releases

WiGaN: eGaN FETs for Hard-Switching Converters at High Frequency

This article presents hard-switching buck converter results switching at 10 MHz and gives a breakdown of the converter losses. It will demonstrate the unmatched high frequency performance capability currently available using eGaN® FETs and also highlight the current limitations to pushing to even higher switching frequencies.

EEWeb
By: Alex Lidow
August, 2014

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Categories: Articles

Efficient Power Conversion (EPC) Experts Present Benchmark Performance with New Generation eGaN FETs at Key Power Industry Conferences in China

EPC to present latest generation eGaN technology at two industry-leading conferences in China – the 3rd Wireless Power World 2014 and IIC China Power Management and Power Semiconductor EL SEGUNDO, Calif. — August, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will deliver application-focused presentations at two industry tradeshows in China: The 3rd Wireless Power World 2014, Shanghai, China EPC experts will show how the superior characteristics of eGaN® ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Lends Support to “The Little Box Challenge” presented by Google and IEEE to Build a (Much) Smaller Power Inverter

eGaN® power transistors are available to help contestants in their design of extremely small power inverters in their attempt to win the “Little Box Challenge” presented by Google and IEEE, an open competition to build a (much) smaller power inverter. To tweet this news, copy and paste http://bit.ly/EPCLBC to your Twitter handle with #LittleBoxChallenge EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces its support for contestants in “Little Box Challenge” presented by Google and IEEE. Little Box Challenge, ... Read more
Categories: Press Releases

Development Boards Make Evaluating eGaN FETs Simple

Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years. By Ashok ... Read more
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