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Intersil Extends Leading Radiation Tolerant Portfolio with Gallium Nitride Power Conversion ICs for Satellite Applications

Intersil Extends Leading Radiation Tolerant Portfolio with Gallium Nitride Power Conversion ICs for Satellite Applications
MILPITAS, Calif., May 25, 2016 /PRNewswire/ -- Intersil Corporation (NASDAQ: ISIL), a leading provider of innovative power management and precision analog solutions, today announced plans to extend its market leading radiation tolerant portfolio to include Gallium Nitride (GaN) power conversion ICs for satellites and other harsh environment applications. PR Newswire May 25, 2016 Read article Read more
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5 Industries That Are Actually Ripe for Disruption

5 Industries That Are Actually Ripe for Disruption

The number one barrier to improving every electronic product – from smart wearables and laptops to handheld tools and electric cars – is battery technology. The current state-of-the-art in rechargeable batteries, Lithium Ion, has been around for 25 years. As tech goes, that’s pretty old. It’s time for something new, don’t you think?

Fortune
Steve Tobak
May 13, 2016
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eGaN Technology Reliability and Physics of Failure - Examining eGaN Field Reliability

eGaN Technology Reliability and Physics of Failure - Examining eGaN Field Reliability
Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs and integrated circuits (ICs) are finding their way into many end user applications such as LIDAR, wireless charging, DC-DC conversion, RF base station transmission, satellite systems, and audio amplifiers. Field reliability is the ultimate metric that corroborates the quality level of eGaN® FETs and ICs that have been deployed in customer applications. In our first installment we provided an overview of eGaN FET field reliability which included 6 years of volume production ... Read more
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Data center next generation power supply solutions for improved efficiency

Data center next generation power supply solutions for improved efficiency
Claude Shannon started it all when he wrote “A Mathematical Theory of Communication” in 1948 in which he reduced the communication of information to 1s and 0s, essentially binary digits. That theory led to the ability to transmit data without error in the noise-filled environment of the real world. Shannon would have been 100 years old on April 30, 2016. EDN Network Steve Taranovich April 16, 2016 Read article Read more
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WiGaN: Low Cost Differential-Mode Wireless Power Class-E Amplifier Using eGaN FETs

WiGaN: Low Cost Differential-Mode Wireless Power Class-E Amplifier Using eGaN FETs
In this installment of WiGaN, a differential-mode class-E amplifier for 6.78 MHz loosely coupled resonant wireless power applications is presented. It uses the EPC2037 eGaN® FET which has a small (0.9 mm x 0.9 mm) footprint and can be driven directly with a logic gate. The amplifier is AirFuel™ Class 2 compatible, capable of delivery up to 6.5 W load power over an impedance range of 70j Ω. EEWeb - Wireless & RF Magazine Yuanzhe Zhang, Ph.D., Director of Applications Engineering Michael de Rooij, Ph.D., Vice President of Applications Engineering April 12, 2016 Read article Read more
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What GaN circuits can do for wireless charging

What GaN circuits can do for wireless charging

In this short video, EPC's Alex Lidow explains why GaN FETs may make it possible to wirelessly charge a variety of vehicles, including flying drones. Wireless charging circuits employing GaN FETs work at 13.56 MHz, a switching frequency difficult to reach with ordinary silicon FETs. The GaN transistors used are also five to ten times smaller than silicon devices able to handle the same power levels.

Design World
April 11, 2016
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Why GaN circuits make better Lidar

Why GaN circuits make better Lidar

In this short video, EPC's Alex Lidow explains why GaN FETs can comprise circuits able to deliver Lidar resolutions down to a couple inches. Conventional silicon FETs performing the same tasks would be able to resolve images only down to a few feet. The secret is in the super-fast rise and fall times made possible by the GaN FETs.

Design World
April 11, 2016
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Why gallium nitride is '6,000 times better' than silicon

Why gallium nitride is '6,000 times better' than silicon
Silicon -- the core ingredient in semiconductors and the driving force behind the electronics industry -- is reaching its limit, says Alex Lidow, CEO of Efficient Power Conversion Corporation. His Los Angeles-based company is investigating the capacity of gallium nitride (GaN) to disrupt the $400 billion (£277bn) silicon industry with its improved powers of semiconducting. "This is the first 
time that there is a semiconductor that is both lower cost and has a higher performance than silicon," Lidow says. Wired Magazine Emma Bryce March 31, 2016 Read article Read more
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Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more!

Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more!
Emerging applications such as 48V-to-point-of-load (POL), wireless power and USB Type-C had a lot of interest. Google joined the Open Compute Project a few weeks ago and proposed a computer server-rack architecture based on a 48V power-distribution bus to improve overall system efficiency. While the 48V bus has been around for a long time, the push (and challenge) is for high-efficiency 48V-to-POL voltage regulators. EPC showcased TI’s 48V-to-1V EVM which uses the LMG5200 GaN module (driver and FETs), announced at APEC last year, and a new TI analog controller (TPS53632G). TI E2E ... Read more
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APEC 2016: An Engineer's Perspective on a Power Conference

APEC 2016: An Engineer's Perspective on a Power Conference
You might have seen some behind-the-scenes tweets from the life of the ECN editor (and News Director) and while a picture is worth a thousand words, sometimes an engineer's perspective on a conference is worth a little more. With that in mind, I reached out to some APEC engineers and attendees to get the lowdown on this year's Applied Power Electronics Conference in Long Beach, CA. We talked about how the show compared to last year, the biggest trends, and how APEC went for their companies. ECNMag.com Kasey Panetta Read article Read more
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Reflections On APEC 2016: GaN’s Momentum, More Magnetics And An Inspiring Plenary

Reflections On APEC 2016: GaN’s Momentum, More Magnetics And An Inspiring Plenary
At this year’s APEC 2016, news about GaN power technology was probably more dominant than at any time in the past. Real product demos using GaN, new product and technology announcements, attention to GaN in the plenary, and other discussions all reinforced the impression that GaN power devices have arrived and the technology is making inroads in the marketplace. One of the tell-tale signs is a slight shift in the discussions, away from what the devices can do to what else is needed to support the design-in of GaN power transistors. How2Power Today David Morrison April 1, 2016 Read ... Read more
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Multiple Charging Modes from a single amplifier

Multiple Charging Modes from a single amplifier

Though there are two standards for charging appliances wirelessly, a single circuit can be devised to serve as a charging node for both of them.

Design World
Michael de Rooij, Ph.D., Vice President, Applications Engineering
March, 2016
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Alex Lidow - Envelope Tracking for Power Management Using eGaN Devices

Alex Lidow - Envelope Tracking for Power Management Using eGaN Devices

Alex Lidow talks about advanced envelope tracking for power management. The ability of an amplifying system to follow the signal and only output the power needed to express it can save significant amounts of energy and improve performance.

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Look Out Silicon Valley, Here Comes Gallium Beach

Look Out Silicon Valley, Here Comes Gallium Beach
Alex Lidow is a man on a mission. His Southern California company, Efficient Power Conversion or EPC, is using Gallium Nitride (GaN) chips instead of silicon for exciting applications, from wireless power charging and 4G LTE to augmented reality and autonomous vehicles. But can this hot new technology ultimately displace the ubiquitous silicon chip in a $300 billion semiconductor market? Fox Business By Steve Tobak March 18, 2016 Read article Read more
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The Quest for Server Power Efficiency

The Quest for Server Power Efficiency

Glamour items like energy harvesting and wireless power transfer are likely to make "guest appearances" at next week's APEC Conference. GaN transistor deployments will be carefully monitored. But on-going efforts to promote data-center energy transfer efficiency retain their "bread-and-butter" utility.

EE Times
By: Stephan Ohr, Consultant, Semiconductor Industry Analyst
March 16, 2016
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How This Entrepreneur Rose From the Ashes to Challenge Silicon Valley

How This Entrepreneur Rose From the Ashes to Challenge Silicon Valley
After getting his PhD in applied physics at Stanford, Alex Lidow spent 30 years at International Rectifier (IR), a publicly traded chip company founded by his father Eric Lidow back in the 1940s. Alex pioneered IR’s power management technology, co-authored the core-patents on which its business was built, became co-CEO with his brother, Derek, in 1995, and ran the company solo after Derek left to found market research firm iSupply in 1999. Entrepreneur By: Steve Tobak March, 2016 Read article Read more
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Rethinking Server Power Architecture in a Post-Silicon World

Rethinking Server Power Architecture in a Post-Silicon World
The demand for information in our society is growing at an unprecedented rate. With emerging technologies, such as cloud computing and the Internet of Things, this trend for more and faster access to information is showing no signs of slowing. What makes the transfer of information at high rates of speed possible are racks and racks of servers, mostly located in centralized data. EEWeb Alex Lidow, Ph.D., David Reusch, Ph.D., and John Glaser, Ph.D. March, 2016 Read article on page 24 Read more
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eGaN Technology Reliability and Physics of Failure

eGaN Technology Reliability and Physics of Failure
In this series we will look at the various ways the reliability of eGaN® technology has been validated, and how we are developing models from our understanding of the physics of failures that can help predict failure rates under almost any operating condition. In this first installment and the next, we will look at the field experience from the past six years of GaN transistors use in a variety of applications from vehicle headlamps to medical systems to 4G/LTE telecom systems. Diving into the failure of each and every part leads to some valuable lessons learned. Planet ... Read more
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Thoughtful Board Design Unlocks the Promise of GaN

Thoughtful Board Design Unlocks the Promise of GaN
Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies. Electronic Design March, 2016 Read article Read more
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20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN FETs

20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN FETs
This article presents an envelope tracking power supply using EPC8004 high frequency eGaN® FETs for 4G LTE wireless base station infrastructure. An ET power supply with four-phase soft-switching buck converter using eGaN FETs is able to accurately track a 20 MHz 7 db PAPR LTE envelope signal with greater than 92% total efficiency, delivering 60 W average power. The design is scalable to satisfy different power levels by choosing different eGaN FETs. Bodo’s Power Systems Yuanzhe Zhang, Ph.D., Michael de Rooij, Ph.D. March, 2016 Read article Read more
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