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Video: GaN for Wireless Power

Video: GaN for Wireless Power

Alex Lidow of EPC shows the latest GaN-enabled wireless power tech at APEC 2015.

Power Systems Design
March 19, 2015
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Categories: GaN Market News

Yole: GaN power challenges SiC

According to the latest report from Yole Développement, the GaN power industry is set for significant growth in the future.

Compound Semiconductor
June 12, 2014
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Yole: Power To Dominate GaN-On-Silicon Market

Yole Développement is releasing, this week, the "GaN-on-Si Substrate Technology and Market for LED and Power Electronics" report. Analysts believe that GaN-on-silicon technology will be widely adopted by power electronics applications. The power electronics market addresses applications such as AC to DC or DC to AC conversion, which is always associated with substantial energy losses that increase with higher power and operating frequencies. Incumbent silicon based technology is reaching its limit and it is difficult to meet higher requirements. ... Read more
Categories: GaN Market News

EPC Addresses Global GaN Power Management Product Demand; Leverages Digi-Key for Global Distribution

Global electronic components distributor Digi-Key Corporation, the industry leader in electronic component selection, availability and delivery, today announced new inventory of Gallium Nitride (GaN) power management products, available for immediate shipment as part of an exclusive global distribution agreement with Efficient Power Conversion (EPC) http://www.digikey.com/us/en/press-release/epc-gan-global-distribution-agreement.html

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Categories: GaN Market News

GaN In Power Electronics Applications

Bandgap materials GaN and SiC are generating significant buzz globally. Demand for GaN devices used in power electronics applications expected to grow strongly

http://www.compoundsemiconductor.net/csc/news-details/id/19736817/name/GaN-in-power-electronics-application.html

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Categories: GaN Market News

GaN Power Devices Transition To Production Phase

Since gallium nitride (GaN) based power devices have a vast potential to grow in usage, this market opportunity continues to attract more new suppliers. As a result, the list of manufacturers of GaN technology based power devices is steadily expanding. How2Power June, 2013 More ...

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Categories: GaN Market News

Industry Review: SiC and GaN Power Devices

By: Andy Extance, Power Dev’
April, 2013

Efficient Power Conversion Corporation (EPC), Fairchild Semiconductor, GeneSiC Semiconductor, ROHM Semiconductor, and Transphorm tell Andy Extance and Power Dev’ how they’re turning module and system makers toward wide bandgap devices.

http://www.bluetoad.com/publication/?i=157700&p=6

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Categories: GaN Market News

Si vs. GaN vs. SiC: Which process and supplier are best for my power design?

By: Steve Taranovich, EDN March 15, 2013 As the race toward leadership in the power element continues to evolve, industry experts have said that by mid-2013 about half a dozen GaN, Si, and SiC suppliers will reveal process enhancements, new architectures, and the latest new capabilities that will bring new choices and tools to the industry. http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design- Read more
Categories: GaN Market News

Vendor Positions in the High Voltage GaN Commercialization Race

The race to commercialize Gan-on-Si technology for power conversion applications continues at an intensified pace. As of December 2012 more than twenty semiconductor vendors have participate in this race led by a group of about seven vendors.

www.bodospower.com

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Categories: GaN Market News

Low-Cost GaN e-mode Transistors and Diodes

January 2, 2013

Within the power electronics industry, GaN technology is growing out of its niche. The first GaN transistors are winning a growing share of the power electronics market. By Steve Soffels, Denis Marcon, and Stefaan Decoutere, IMEC www.bodospower.com

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Categories: GaN Market News

GaN-on-Si Based FETs Foster New Applications

Although, for the last few years, there has been a lot of talk about gallium nitride(GaN) based power transistors displacing the entrenched silicon MOSFETs, it might take some time before the emerging gallium nitride on silicon (GaN-on-Si) based power FETs enter the mainstream power conversion space. However, in the meantime, a handful of emerging applications are poised to tap the benefits of this promising power technology. Besides commercial availability with high reliability, there are a number of unique GaN characteristics that are fostering these new applications. Ashok ... Read more
Categories: GaN Market News

Efficient Power Conversion - Enhancement-mode Gallium Nitride Transistor

By: Sun Changhua
www.digitimes.com.tw
December 20, 2012

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Categories: GaN Market News

Huge Expectations for GaN Market Growth

The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified customers was extremely buoyant.

http://www.news10.com/story/17735484/power-gan-2012?clienttype=printable

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Categories: GaN Market News

Accelerated development of eGaN FETs as silicon MOSFET come to the end of the road

With eGaN® FETs' high-performance capabilities, we have seen rapid adoption in applications for efficient DC/DC conversion, POL converters, Class D audio amplifier and high frequency circuits. Texas Instruments’ introduction of the industry's first 100V, half-bridge GaN FET driver (LM5113), optimized for use with enhancement-mode GaN (eGaN) field-effect transistors (FETs),has further propelled such an accelerated adoption pace in applications like high-performance telecom power supplies, networking and datacom centers. Read articles: EDN China April 2012 Print ... Read more
Categories: GaN Market News

GaN power market to rise to $10 million in 2012, says Yole

Written by Peter Clarke - 3/7/2012 2:20 PM EST LONDON - The market for power devices implemented in gallium nitride was less than $2.5 million in 2011, according to market research firm Yole Developpement (Lyon, France). However, there is a great deal of R&D activity and Yole sees the power GaN market growing to nearly $0 million in 2012 and $500 million in 2016. International Rectifier Corp. (El Segundo, Calif.) and Efficient Power Conversion Corp. (El Segundo, Calif.) are likely to remain the two main vendors of GaN power devices in early 2012 and the annual market is likely to ... Read more
Categories: GaN Market News

Gallium nitride based devices set to bring substantial boost to power efficiency

Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors. But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet. By: Graham Pitcher New Electronics December 13, 2011 Read the article Read more
Categories: GaN Market News

GaN and SiC: on track for speed and efficiency

Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.

By Margery Conner
EDN
August 25, 2011

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Categories: GaN Market News

EPC9004 Named “Product of the Month” by Bodo’s Power Systems®

The EPC9004 has been recognized by Bodo’s Power Systems as the Product of the Month in the September, 2011 issue of the magazine. The EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board.

Bodo's Power Systems
September, 2011

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Categories: GaN Market News

Dedicated Driver Squeezes Optimal Performance Out Of Enhancement-Mode GaN FETs

We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM. By Ashok Bindra How2Power June, 2011 Read the article Read more
Categories: GaN Market News

Industry's first eGaN FET Driver simplifies switching design

GaN (Gallium-Nitride) FETs appear poised to eat into silicon FETs market share as switching devices for high-voltage power conversion circuits.

By Margery Conner
EDN
June 20, 2011

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Categories: GaN Market News
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