Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.
Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc-dc converters, ac-dc converters, and automotive to start their evaluation process. ...
Alex Lidow of EPC shows the latest GaN-enabled wireless power tech at APEC 2015.
Power Systems Design
March 19, 2015
According to the latest report from Yole Développement, the GaN power industry is set for significant growth in the future.
June 12, 2014
Read the article
Yole Développement is releasing, this week, the "GaN-on-Si Substrate Technology and Market for LED and Power Electronics" report. Analysts believe that GaN-on-silicon technology will be widely adopted by power electronics applications. The power electronics market addresses applications such as AC to DC or DC to AC conversion, which is always associated with substantial energy losses that increase with higher power and operating frequencies. Incumbent silicon based technology is reaching its limit and it is difficult to meet higher requirements. ...
Since gallium nitride (GaN) based power devices have a vast potential to grow in usage, this market opportunity continues to attract more new suppliers. As a result, the list of manufacturers of GaN technology based power devices is steadily expanding. How2Power June, 2013 More ...
By: Andy Extance, Power Dev’
Efficient Power Conversion Corporation (EPC), Fairchild Semiconductor, GeneSiC Semiconductor, ROHM Semiconductor, and Transphorm tell Andy Extance and Power Dev’ how they’re turning module and system makers toward wide bandgap devices.
By: Steve Taranovich, EDN
March 15, 2013
As the race toward leadership in the power element continues to evolve, industry experts have said that by mid-2013 about half a dozen GaN, Si, and SiC suppliers will reveal process enhancements, new architectures, and the latest new capabilities that will bring new choices and tools to the industry. http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-
The race to commercialize Gan-on-Si technology for power conversion applications continues at an intensified pace. As of December 2012 more than twenty semiconductor vendors have participate in this race led by a group of about seven vendors.
Read the Article
January 2, 2013
Within the power electronics industry, GaN technology is growing out of its niche. The first GaN transistors are winning a growing share of the power electronics market. By Steve Soffels, Denis Marcon, and Stefaan Decoutere, IMEC www.bodospower.com
Although, for the last few years, there has been a lot of talk about gallium nitride(GaN) based power transistors displacing the entrenched silicon MOSFETs, it might take some time before the emerging gallium nitride on silicon (GaN-on-Si) based power FETs enter the mainstream power conversion space. However, in the meantime, a handful of emerging applications are poised to tap the benefits of this promising power technology. Besides commercial availability with high reliability, there are a number of unique GaN characteristics that are fostering these new applications.
With eGaN® FETs' high-performance capabilities, we have seen rapid adoption in applications for efficient DC/DC conversion, POL converters, Class D audio amplifier and high frequency circuits. Texas Instruments’ introduction of the industry's first 100V, half-bridge GaN FET driver (LM5113), optimized for use with enhancement-mode GaN (eGaN) field-effect transistors (FETs),has further propelled such an accelerated adoption pace in applications like high-performance telecom power supplies, networking and datacom centers.
EDN China April 2012 Print ...
Written by Peter Clarke - 3/7/2012 2:20 PM EST
LONDON - The market for power devices implemented in gallium nitride was less than $2.5 million in 2011, according to market research firm Yole Developpement (Lyon, France). However, there is a great deal of R&D activity and Yole sees the power GaN market growing to nearly $0 million in 2012 and $500 million in 2016.
International Rectifier Corp. (El Segundo, Calif.) and Efficient Power Conversion Corp. (El Segundo, Calif.) are likely to remain the two main vendors of GaN power devices in early 2012 and the annual market is likely to ...
Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors.
But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet.
By: Graham Pitcher
December 13, 2011
Read the article
Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.
By Margery Conner
August 25, 2011
Read the article
The EPC9004 has been recognized by Bodo’s Power Systems as the Product of the Month in the September, 2011 issue of the magazine. The EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board.
Bodo's Power Systems
Read the article