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GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion
Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits. EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the ... Read more
Categories: Press Releases

GaN-Based 48 V to 12 V Regulated Power Supply Development Board Delivers over 1250 W per Cubic Inch and Over 96% Efficiency

GaN-Based 48 V to 12 V Regulated Power Supply Development Board Delivers over 1250 W per Cubic Inch and Over 96% Efficiency
Efficient Power Conversion’s EPC9130 five-phase development board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors. EL SEGUNDO, Calif.— March 2018 —Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board.  This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding ... Read more
Categories: Press Releases

150-Ampere LiDAR Development Board Can Deliver 5 Nano Second Pulses Using eGaN Technology From EPC

150-Ampere LiDAR Development Board Can Deliver 5 Nano Second Pulses Using eGaN Technology From EPC
Ultra-fast transition eGaN FETs used on the EPC9126HC can drive high current pulses up to 150 A and pulse widths as low as 5 ns, thus enhancing the quality of information a LiDAR system will detect, including the accuracy, precision, and processing speed. EL SEGUNDO, Calif. — November 2017 — Efficient Power Conversion Corporation (EPC) announces the availability of the EPC9126HCa 100 V, 150 A high current pulsed laser diode driver evaluation board. In a LiDAR system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As ... Read more
Categories: Press Releases

EPC Announces Development Board Operating Up To 10 MHz for High Efficiency at High Frequency Point-of-Load DC-DC Conversion

EPC Announces Development Board Operating Up To 10 MHz for High Efficiency at High Frequency Point-of-Load DC-DC Conversion
The EPC9086 high efficiency half-bridge development board can operate up to 10 MHz featuring a 30 V EPC2111 eGaN® half bridge in combination with the recently introduced high speed Peregrine Semiconductor PE29102 gate driver. EL SEGUNDO, Calif.—October 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of The EPC9086 development board, a high efficiency half-bridge development board that can operate up to 10 MHz.  The EPC9086 board measures 2” x 2” and contains a 30 V, 15 A EPC2111 enhancement-mode gallium nitride half ... Read more
Categories: Press Releases

EPC Announces a Full Range of Wireless Power Demonstration Kits That Can Be Used to Design Systems That Power Anything from Lamps to Laptops

EPC Announces a Full Range of Wireless Power Demonstration Kits That Can Be Used to Design Systems That Power Anything from Lamps to Laptops
Superior characteristics of eGaN® FETs and ICs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size used in these demonstration kits show that GaN FETs and ICs are ideal for increasing efficiency in highly resonant, AirFuel™ Alliance compatible wireless power transfer systems. EL SEGUNDO, Calif.—October 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of two new demonstration kits -- the EPC9127, a complete wireless power kit including a 10 W, class 2 amplifier, category 3 receiver ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces 60 W Class-E Amplifier Development Board with Latest Generation 200 V eGaN FET Enabling High Efficiency Up to 15 MHz

Efficient Power Conversion (EPC) Introduces 60 W Class-E Amplifier Development Board with Latest Generation 200 V eGaN FET Enabling High Efficiency Up to 15 MHz
EPC’s new EPC9083 development board enables power system designers to easily and quickly evaluate the high efficiency achieved with a high performance 200 V gallium nitride transistor in a class-E amplifier used in wireless power, LiDAR, current-mode class-D, and push-pull converters operating up to 15 MHz. EL SEGUNDO, Calif.— August 2017 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS

Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS
EPC2046 GaN power transistor offers power systems designers a 200 V, 25 mΩ power transistor about 12 times smaller than equivalently rated silicon MOSFETs for wireless power, multi-level AC-DC power supplies, robotics, and solar micro inverters. EL SEGUNDO, Calif. — May 2017 — EPC announces the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives. The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current. Read more
Categories: Press Releases

15 MHz Half-Bridge Development Boards Use EPC's eGaN FETs and High Frequency Synchronous Bootstrap Topology

15 MHz Half-Bridge Development Boards Use EPC's eGaN FETs and High Frequency Synchronous Bootstrap Topology
EPC’s new development boards can be configured as either a buck converter or a ZVS class-D amplifier, demonstrating reduced losses at high frequency using an eGaN FET synchronous bootstrap augmented gate drive. EL SEGUNDO, Calif.— March 2016 — Efficient Power Conversion Corporation (EPC) Introduces the EPC9066, EPC9067, and EPC9068 development boards, which are configurable to a buck converter or as a ZVS class-D amplifier. These boards provide an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, ... Read more
Categories: Press Releases

100 W, 92% Efficient eGaN FET Development Board from Efficient Power Conversion (EPC) for the 6.78 MHz AirFuel Wireless Power Standard

100 W, 92% Efficient eGaN FET Development Board from Efficient Power Conversion (EPC) for the 6.78 MHz  AirFuel Wireless Power Standard
EPC9065 development board has the highest power and highest efficiency at 6.78 MHz for the AirFuelTM wireless power standard, using eGaN® FETs EL SEGUNDO, Calif.— February 2016 — Efficient Power Conversion (EPC) announces the EPC9065, a development board that can serve as the amplifier stage for AirFuelTM Alliance Class 4 and Class 5 wireless power transfer applications. This board is a Zero Voltage Switching (ZVS) differential-mode class-D amplifier development board configured at, but is not limited to, 6.78 MHz (Lowest ISM band). Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Announces Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications

Efficient Power Conversion (EPC) Announces Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications
EPC9059 development board showcases industry’s first monolithic half-bridge enhancement-mode gallium nitride (eGaN®) integrated circuits for high current, high frequency point-of-load applications for increased power density. EL SEGUNDO, Calif.— January 2016 — Efficient Power Conversion Corporation (EPC) introduces the EPC9059 half-bridge development board for high current, high frequency point-of-load (POL) applications using eGaN ICs to reduce power conversion size. The EPC9059 development board has a 30 V maximum device voltage with a 50 A maximum output ... Read more
Categories: Press Releases

Development Boards with 200 V eGaN FETs from Efficient Power Conversion (EPC) Enable High Efficiency up to 30 MHz

Development Boards with 200 V eGaN FETs from Efficient Power Conversion (EPC) Enable High Efficiency up to 30 MHz
EPC’s new development boards enable power systems designers to easily and quickly evaluate the high efficiency achieved with 200 V gallium nitride transistors in class-E amplifiers, current-mode class-D, and push-pull converters operating up to 30 MHz. EL SEGUNDO, Calif.— January 2016 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces high efficiency, GaN-based differential mode ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN Product Family for Wireless Charging Applications with, Extremely Small, Low Cost FETs

Efficient Power Conversion Corporation (EPC) Expands eGaN Product Family for Wireless Charging Applications with, Extremely Small, Low Cost FETs
100 volt, 1 amp, 550 milliohm EPC2037 enhancement-mode gallium nitride power transistor is driven directly from a digital drive and delivers high frequency switching for exceptional performance in wireless charging Class-D and Class-E amplifier applications. EL SEGUNDO, Calif. – October 2015 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2037 as the newest member of EPC’s family of enhancement-mode gallium nitride power transistors (eGaN® FETs). Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating Over 2 MHz, Ideal for Class-D Audio

Efficient Power Conversion (EPC) Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating Over 2 MHz, Ideal for Class-D Audio
EPC2106 GaN power transistor offers power systems designers a solution that switches over 2 MHz resulting in no interference with the AM band, reducing costs for filtering, thus making it ideal for low distortion Class-D audio. EL SEGUNDO, Calif. — August 2015 — EPC announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces eGaN Power Integrated Circuit for a New Benchmark in Efficiency and Cost for A4WP Rezence Wireless Power Transfer

Efficient Power Conversion (EPC) Introduces eGaN Power Integrated Circuit for a New Benchmark in Efficiency and Cost for A4WP Rezence Wireless Power Transfer
New EPC2107 and EPC2108 eGaN® power integrated circuits include monolithic half bridge and integrated bootstrap functions for A4WP compliant Class 2 and Class 3 solutions. In addition, development boards and complete wireless power solutions – transmit and receive devices – for quick and easy evaluations of these components are available. EL SEGUNDO, Calif. — July 2015 — EPC announces the EPC2107 (100 V) and EPC2108 (60 V) eGaN half bridge power integrated circuits with integrated bootstrap FET, eliminating gate driver induced reverse recovery loses as well ... Read more
Categories: Articles

Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers

Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers
New family of eGaN power transistors offer superior performance, smaller size, and high reliability…at the price of a MOSFET. EL SEGUNDO, Calif.— April 2015 — Efficient Power Conversion Corporation (EPC) announces the 60 V EPC2035 and 100 V EPC2036 eGaN power transistors designed to compete in price, while outperforming silicon. Price, the last barrier to widespread adoption of GaN transistors as silicon MOSFET replacements, has fallen. These products demonstrate that gallium nitride can displace silicon semiconductors and drive the industry back onto the Moore’s Law growth curve. Read more
Categories: Press Releases

Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers High Quality Audio Performance in Space Saving Design

Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers High Quality Audio Performance in Space Saving Design

EPC9106 Class-D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.

EL SEGUNDO, Calif. — February 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 ohm Class-D audio amplifier.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling over 87% System Efficiency for a 28 V to 1 V Point of Load Converter at 14 A output.

The EPC2101 GaN power monolithic half bridge offers power systems designers a solution that increases efficiency and power density. For a complete buck converter, system efficiency approaches 87% at 14 A, and over 82% at 30 A when switching at 500 kHz and converting from 28 V to 1 V while reducing the board area occupied by transistors by 50% when compared to a discrete solution. EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Half Bridge enabling 48 V to 12 V System Efficiency at 20 A output over 97%

EPC2105 GaN half bridge offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 98% at 10 A when switching at 300 kHz and converting from 48 V to 12 V, and 84% at 14 A when switching at 300 kHz and converting from 48 V to 1.0 V. EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces 300 V Gallium Nitride Power Transistors for High Frequency Applications

EPC2025 GaN power transistor offers power systems designers a 300 V power transistor capable of 2ns rise times for high frequency DC-DC converters and medical diagnostic instruments. EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2025, a 300 V power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, power inverters, and LED lighting. The EPC2025 has a voltage ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling 12 V to 1.2 V Point of Load System Efficiency at 25 A output over 90%

EPC2100 GaN power transistor offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 93% at 10 A, and over 90.5% at 25 A when switching at 500 kHz and converting from 12 V to 1.2 V. EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2100, the first commercially available enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both ... Read more
Categories: Press Releases
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