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Why go for GaN?

Why go for GaN?
GaN technology has matured to a point where it can challenge traditional silicon technology.  Gallium nitride(GaN)-on-silicon low voltage power devices have enabled many new applications since commercial availability began in 2010. New markets, such as light detection and ranging (LiDAR), envelope tracking, and wireless power, emerged due to the superior switching speed of GaN. These new applications have helped develop a strong supply chain, low production costs, and an enviable reliability record. All of this provides adequate incentive for the more conservative design ... Read more
Categories: Articles

GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs
Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc-dc converters, ac-dc converters, and automotive to start their evaluation process. ... Read more

Efficient Power Conversion (EPC) Publishes Ninth Reliability Report Documenting Millions of GaN Technology Device Hours with Zero Failures After Rigorous Stress Testing

Efficient Power Conversion (EPC) Publishes Ninth Reliability Report Documenting Millions of GaN Technology Device Hours with Zero Failures After Rigorous Stress Testing
EPC’s Phase Nine Reliability Report documents a combined total of over 9 million GaN stress device-hours with zero failures. This report focuses on thermo-mechanical board level reliability, describing for the first time, a predictive model for solder joint integrity and showing the superior reliability of wafer level chip-scale packaging (WLCSP) GaN technology over comparable packaged devices. EL SEGUNDO, Calif.— April 2017 — EPC announces its Phase Nine Reliability Report showing the results of a rigorous set of thermo-mechanical board level reliability testing. ... Read more
Categories: Press Releases

eGaN Technology Reliability and Physics of Failure - Gate Voltage Stress Reliability

eGaN Technology Reliability and Physics of Failure - Gate Voltage Stress Reliability
The previous installment in this series focused on the physics of failure surrounding thermo-mechanical reliability of EPC eGaN wafer level chip-scale packages. A fundamental understanding of the potential failure modes under voltage bias is also important. This installment will provide an overview of the physics of failure associated with voltage bias at the gate electrode of gallium nitride (GaN) field effect transistors (FETs). Here we look at the case of taking the gate control voltage to the specified limit and beyond to investigate how eGaN FETs behave over a projected ... Read more
Categories: Articles

eGaN Technology Reliability and Physics of Failure - Strain on solder joints

eGaN Technology Reliability and Physics of Failure - Strain on solder joints
The first three installments in this series covered field reliability experience and stress test qualification of EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs) and integrated circuits (ICs). Excellent field reliability that was documented is the result of applying stress tests covering the intended operating conditions the devices will experience within applications. Of equal importance is understanding the underlying physics of how eGaN devices will fail when stressed beyond intended operating conditions (e.g. datasheet parameters and safe operating area). ... Read more
Categories: Articles

Documenting GaN Technology Reliability after Millions of Device Hours of Rigorous Stress Testing

Documenting GaN Technology Reliability after Millions of Device Hours of Rigorous Stress Testing

EPC Phase Eight Reliability Report documents a combined total of over 8 million GaN device-hours with zero failures. The report examines, in detail, the stress tests that EPC devices are subjected to prior to release as qualified products and analyzes the physics of failure.

Bodo’s Power Systems
September 1, 2016
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Categories: Articles

Efficient Power Conversion (EPC) Publishes Reliability Report Documenting GaN Technology Reliability After Millions of Device Hours of Rigorous Stress Testing

Efficient Power Conversion (EPC) Publishes Reliability Report Documenting GaN Technology Reliability After Millions of Device Hours of Rigorous Stress Testing
EPC Phase Eight Reliability Report documents a combined total of over 8 million GaN device-hours with zero failures. The report examines, in detail, the stress tests that EPC devices are subjected to prior to release as qualified products and analyzes the physics of failure. EL SEGUNDO, Calif.— July 2016 — EPC announces its Phase Eight Reliability Report showing the results of the rigorous set of JEDEC-based qualification stress tests eGaN FETS and integrated circuits undertake prior to being considered qualified products. Read more
Categories: Press Releases

Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Senior representatives GaN power manufacturers (EPC, Transphorm, GaN Systems, Infineon and Navitas) presented details of their significant developments in moving the technology into mainstream, volume applications. Based on the information presented in the five talks, there are three significant reasons to expect dramatic growth in adoption of GaN power devices.

Bodo’s Power Systems
June 1, 2016
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Categories: GaN Market News

eGaN Technology Reliability and Physics of Failure - Examining eGaN Field Reliability

eGaN Technology Reliability and Physics of Failure - Examining eGaN Field Reliability
Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs and integrated circuits (ICs) are finding their way into many end user applications such as LIDAR, wireless charging, DC-DC conversion, RF base station transmission, satellite systems, and audio amplifiers. Field reliability is the ultimate metric that corroborates the quality level of eGaN® FETs and ICs that have been deployed in customer applications. In our first installment we provided an overview of eGaN FET field reliability which included 6 years of volume production ... Read more
Categories: Articles

Efficient Power Conversion (EPC) Publishes Reliability Report Documenting Over 17 Billion Field-Device Hours with Very Low Failure Rate

Efficient Power Conversion (EPC) Publishes Reliability Report Documenting Over 17 Billion Field-Device Hours with Very Low Failure Rate
EPC Phase Seven Reliability Report shows that eGaN® FETs have solid reliability and are dependable replacement solutions to traditional silicon devices. EL SEGUNDO, Calif.— March 2016 — EPC announces its Phase Seven Reliability Report showing the distribution of over 17 billion accumulated field-device hours and detailing test data from more than 7 million equivalent device-hours under stress. The stress tests included intermittent operating life (IOL), early life failure rate (ELFR), humidity with bias, temperature cycling, and electrostatic discharge. The study reports ... Read more
Categories: Press Releases

eGaN Technology Reliability and Physics of Failure

eGaN Technology Reliability and Physics of Failure
In this series we will look at the various ways the reliability of eGaN® technology has been validated, and how we are developing models from our understanding of the physics of failures that can help predict failure rates under almost any operating condition. In this first installment and the next, we will look at the field experience from the past six years of GaN transistors use in a variety of applications from vehicle headlamps to medical systems to 4G/LTE telecom systems. Diving into the failure of each and every part leads to some valuable lessons learned. Planet ... Read more
Categories: Articles

eGaN FET Safe Operating Area

In this article, we show that high electron densities and very low temperature coefficients give the eGaN FET major advantages over the power MOSFET needed for today’s high performance applications. High electron density yields superior RDS(ON), while positive temperature coefficients inhibit hot spot generation within the die, resulting in superior Safe Operating Area capabilities. By Yanping Ma, Ph.D., Director of Quality, EPC Bodo's Power Systems Read the article Read more
Categories: Articles

Efficient Power Conversion (EPC) eGaN FETs Offer Superior Safe Operating Area Capabilities

eGaN FETs exhibit a positive temperature coefficient across their entire operating range, thus overcoming a performance limitation of the silicon MOSFET.

EL SEGUNDO, Calif.—September 2012 — Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for their entire product line of eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.

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Categories: Press Releases
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