News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

The Power and Evolution of GaN

The Power and Evolution of GaN
Gallium nitride(GaN)-on-silicon low voltage power devices have enabled many new applications since commercial availability began in 2010. New markets, such as light detection and ranging (LiDAR), envelope tracking, and wireless power, emerged due to the superior switching speed of GaN. These new applications have helped develop a strong supply chain, low production costs, and an enviable reliability record. All of this provides adequate incentive for the more conservative design engineers in applications, such as dc–dc converters, ac–dc converters, and automotive to start their evaluation ... Read more
Categories: Articles

EPC Introduces 40 V Gallium Nitride Power Transistor 8 Times Smaller Than Equivalently Rated MOSFETS

EPC Introduces 40 V Gallium Nitride Power Transistor 8 Times Smaller Than Equivalently Rated MOSFETS
EPC2049 GaN power transistor offers power systems designers a 40 V, 5 mΩ power transistor about 8 times smaller than equivalently rated silicon MOSFETs for point of load converters, LiDAR, and low inductance motor drive. EL SEGUNDO, Calif. — December 2017 — EPC announces the EPC2049 power transistor for use in applications including point of load converters, LiDAR, envelope tracking power supplies, class-D audio, and low inductance motor drives. The EPC2049 has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175 A pulsed output current. Read more
Categories: Press Releases

EPC Releases Video Series on How GaN is Changing the Way We Live

EPC Releases Video Series on How GaN is Changing the Way We Live
Produced by industry experts, Efficient Power Conversion has posted six videos showing active end-use applications such as a wireless power tabletop, high performance LiDAR, single-stage 48 V – 1.8 V DC-DC conversion, and precision motor drive control using gallium nitride transistors and integrated circuits. EL SEGUNDO, Calif. – April 2017 – Efficient Power Conversion Corporation (www.epc-co.com) has created and posted to its website six short videos presenting end-customer applications using eGaN® FETs and ICs. These videos show how GaN technology is changing the ... Read more
Categories: Press Releases

EPC Announces the Opening of Blacksburg, Virginia eGaN FET and IC Applications Center and the Appointment of Suvankar Biswas, Ph.D. as Senior Applications Engineer

 EPC Announces the Opening of Blacksburg, Virginia eGaN FET and IC Applications Center and the Appointment of Suvankar Biswas, Ph.D. as Senior Applications Engineer
Adding to its breadth of applications research and support for EPC customer evaluation and use of GaN® FETs and ICs, the company announces the opening of an applications center and the appointment of Suvankar Biswas, Ph.D. as senior applications engineer. EL SEGUNDO, Calif.— January 2017 — Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg, Virginia.  This center will increase the reach of EPC to support research and development for the applications of enhancement-mode gallium nitride transistors and ... Read more
Categories: Press Releases

20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN FETs

20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN FETs
This article presents an envelope tracking power supply using EPC8004 high frequency eGaN® FETs for 4G LTE wireless base station infrastructure. An ET power supply with four-phase soft-switching buck converter using eGaN FETs is able to accurately track a 20 MHz 7 db PAPR LTE envelope signal with greater than 92% total efficiency, delivering 60 W average power. The design is scalable to satisfy different power levels by choosing different eGaN FETs. Bodo’s Power Systems Yuanzhe Zhang, Ph.D., Michael de Rooij, Ph.D. March, 2016 Read article Read more
Categories: Articles

Dr. Yuanzhe Zhang Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Yuanzhe Zhang Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Zhang will be creating benchmark envelope tracking designs and assisting customers in the use of eGaN® FETs for high frequency, high- performance power conversion systems.

EL SEGUNDO, Calif.—January 2016 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. Yuanzhe Zhang has joined the EPC engineering team as Director, Applications Engineering.

Read more
Categories: Press Releases

IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”

On September 3rd IEEE PELS will offer a webinar by Dr. Johan Strydom discussing the contribution of gallium nitride power transistors to meet the demanding system bandwidth requirements of envelope tracking applications. EL SEGUNDO, Calif.— August 2014 — An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 AM (EDT). Discrete GaN power devices offer ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology for High Frequency Resonant and Envelope Tracking Power Supplies at the 2014 Applied Power Electronics and Exposition Confe

At the IEEE APEC 2014 power electronics industry conference, EPC applications experts will make technical presentations on GaN FET technology and applications showing the superiority of GaN transistors compared to silicon power MOSFETs. EL SEGUNDO, Calif. — February, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting three application-focused technical presentations at APEC 2014. Participants will learn about high frequency resonant converter, and high-frequency, ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands High Frequency eGaN® Power Transistor Family Capable of Amplification into the Multiple GHz Range

EPC8010 100 V gallium nitride FET is optimized for high frequency applications with positive gain into the 3 GHz range. EL SEGUNDO, Calif. – January 2014 – Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS. Optimized for high speed switching, the EPC8010 has a maximum RDS(on) of 160 milliohms and input gate charge in the hundreds of ... Read more
Categories: Press Releases

GaN — Still Crushing Silicon One Application at a Time

Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. There are many benefits derived from the latest generation eGaN® FETs in new emerging applications such as highly resonant wireless power transfer, RF envelope tracking, and class-D audio. This article will examine the rapidly evolving trend of conversion from power MOSFETs to gallium nitride transistors in these new applications. Power Pulse By: Alex Lidow February, 2014 Read more
Categories: Articles

Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Darnell’s Energy Summit

EPC CEO and applications experts will conduct a half-day seminar and technical presentations including an invited plenary session presentation on GaN FET technology and applications. EL SEGUNDO, Calif. — August, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2013. The conference will be held in Dallas, Texas from September 9th through the 12th. This ... Read more
Categories: Press Releases

eGaN® FET- Silicon Power Shoot-Out Volume 8: Envelope Tracking

Envelope tracking (ET) for radio frequency (RF) amplifiers is not new. But with the ever increasing need for improved cell phone battery life, better base station energy efficiency, and more output power from very costly RF transmitters, the need for improving the RF Power Amplifier (PA) system efficiency through ET has become an intense topic of research and development. We demonstrate what power and efficiency levels are readily realizable using eGaN FETs in a buck converter for high power envelope tracking applications. By Johan Strydom, Ph.D., Vice President of Applications, EPC ... Read more
Categories: Articles
RSS

Archive