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Efficient Power Conversion (EPC) Announces Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications

Efficient Power Conversion (EPC) Announces Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications
EPC9059 development board showcases industry’s first monolithic half-bridge enhancement-mode gallium nitride (eGaN®) integrated circuits for high current, high frequency point-of-load applications for increased power density. EL SEGUNDO, Calif.— January 2016 — Efficient Power Conversion Corporation (EPC) introduces the EPC9059 half-bridge development board for high current, high frequency point-of-load (POL) applications using eGaN ICs to reduce power conversion size. The EPC9059 development board has a 30 V maximum device voltage with a 50 A maximum output ... Read more
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Advanced Video Series Teaches How to Design with Gallium Nitride (GaN) Power Devices for State-of-the-Art Power Conversion

Advanced Video Series Teaches How to Design with Gallium Nitride (GaN) Power Devices for State-of-the-Art Power Conversion
Produced by industry experts, EPC has posted a nine-part educational video series on design basics, DC-DC conversion, wireless charging, reliability, and other applications for gallium nitride FETs and integrated circuits. EL SEGUNDO, Calif. – January 2016 – Efficient Power Conversion Corporation (www.epc-co.com) has expanded its video library on GaN technology with the addition of a nine-part educational video series designed to provide power system design engineers advanced technical information and application examples on how to design more efficient power conversion ... Read more
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Development Boards with 200 V eGaN FETs from Efficient Power Conversion (EPC) Enable High Efficiency up to 30 MHz

Development Boards with 200 V eGaN FETs from Efficient Power Conversion (EPC) Enable High Efficiency up to 30 MHz
EPC’s new development boards enable power systems designers to easily and quickly evaluate the high efficiency achieved with 200 V gallium nitride transistors in class-E amplifiers, current-mode class-D, and push-pull converters operating up to 30 MHz. EL SEGUNDO, Calif.— January 2016 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces high efficiency, GaN-based differential mode ... Read more
Categories: Press Releases

EPC CEO Alex Lidow Receives 2015 SEMI Award for North America

EPC CEO Alex Lidow Receives 2015 SEMI Award for North America

Award Recognizes Innovation in Power Device Technology for Enabling the Commercialization of GaN

EL SEGUNDO, Calif, — January 2016 — Today, Efficient Power Conversion (EPC) announced that its CEO Alex Lidow was selected as the recipient of the 2015 SEMI Award for North America for the innovation of power device technology, enabling the commercialization of GaN. Dr. Lidow is being honored for his work in the area of Process and Technology Integration.

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Dr. Yuanzhe Zhang Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Yuanzhe Zhang Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Zhang will be creating benchmark envelope tracking designs and assisting customers in the use of eGaN® FETs for high frequency, high- performance power conversion systems.

EL SEGUNDO, Calif.—January 2016 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. Yuanzhe Zhang has joined the EPC engineering team as Director, Applications Engineering.

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN Power Transistors Recognized as EDN Magazine Hot 100 Product for 2015

Efficient Power Conversion Corporation (EPC) Market Leading eGaN Power Transistors Recognized as EDN Magazine Hot 100 Product for 2015
Recognized as an EDN Magazine Hot 100 Product for 2015, EPC2035/36 low-priced gallium nitride FETs give better performance, smaller size, and lower cost than an equivalent silicon solution. This is the third time in 5 years that EPC’s eGaN technology has been recognized as a HOT 100. EL SEGUNDO, Calif. — December 2015 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces that its EPC2035 (60 V) and EPC2036 (100 V) high frequency, low-priced eGaN FETs have been recognized with inclusion in the ... Read more
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Wireless Power Handbook 2nd Edition Published by Efficient Power Conversion Corporation (EPC)

Wireless Power Handbook 2nd Edition Published by Efficient Power Conversion Corporation (EPC)
The Second Edition of the Wireless Power Handbook is an updated and expanded guide to designing efficient amplifiers for a wireless power transfer systems taking advantage of the superior performance of gallium nitride power transistors. EL SEGUNDO, Calif. – December 2015 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of the Second Edition of the Wireless Power Handbook. This edition is a practical engineering handbook designed to provide power system design engineers valuable experiences and points of reference critical to understanding ... Read more
Categories: Press Releases

Nick Cataldo Joins Efficient Power Conversion (EPC) as Senior Vice President of Global Sales and Marketing

Nick Cataldo Joins Efficient Power Conversion (EPC) as Senior Vice President of Global Sales and Marketing
Mr. Cataldo to direct EPC’s global sales and marketing organization and assist customers in adopting eGaN® FETs and Integrated Circuits for leading-edge power conversion systems EL SEGUNDO, Calif.—December 2015 — To support its accelerating growth, Efficient Power Conversion Corporation (EPC) is proud to announce that Nick Cataldo has joined the EPC leadership team as senior vice president of global sales and marketing. Mr. Cataldo has over 35 years of marketing and sales operation experience within the semiconductor industry. His primary responsibilities at EPC ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN Product Family for Wireless Charging Applications with, Extremely Small, Low Cost FETs

Efficient Power Conversion Corporation (EPC) Expands eGaN Product Family for Wireless Charging Applications with, Extremely Small, Low Cost FETs
100 volt, 1 amp, 550 milliohm EPC2037 enhancement-mode gallium nitride power transistor is driven directly from a digital drive and delivers high frequency switching for exceptional performance in wireless charging Class-D and Class-E amplifier applications. EL SEGUNDO, Calif. – October 2015 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2037 as the newest member of EPC’s family of enhancement-mode gallium nitride power transistors (eGaN® FETs). Read more
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Efficient Power Conversion Corporation (EPC) Publishes DC-DC Conversion Handbook, a Practical Guide to Taking Full Advantage of the Superior Performance of Gallium Nitride (GaN) Transistors

Efficient Power Conversion Corporation (EPC) Publishes DC-DC Conversion Handbook, a Practical Guide to Taking Full Advantage of the Superior Performance of Gallium Nitride (GaN) Transistors
EPC’s DC-DC Conversion handbook is a guide showing how to achieve increased efficiency and power density in Datacom equipment and other power conversion applications using GaN power transistors. EL SEGUNDO, Calif. – September 2015 – The demand for information is growing at unprecedented rates and society’s insatiable appetite for communication, computing and downloading, is driving this demand. With emerging technologies, such as, cloud computing and the internet of things, not to mention the 300 hours of video being loaded to YouTube every minute, this trend for ... Read more
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Efficient Power Conversion Corporation (EPC) Expands eGaN Integrated Circuit Family with Dual Enhancement-Mode 120 Volt, 60 milliohm Power Transistor Ideal for Wireless Power Transfer

Efficient Power Conversion Corporation (EPC) Expands eGaN Integrated Circuit Family with Dual Enhancement-Mode 120 Volt, 60 milliohm Power Transistor Ideal for Wireless Power Transfer

120 volt, 60 milliohm EPC2110 dual enhancement-mode gallium nitride power integrated circuit delivers ultra high frequency switching for exceptional performance in wireless power transfer Class-E amplifier applications.

EL SEGUNDO, Calif. – September 2015 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2110 as the newest member of EPC’s family of enhancement-mode gallium nitride integrated circuits.

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Efficient Power Conversion (EPC) Launches New eGaN FET Enabling Big Power in a Small Footprint at a low Price for Wireless Power Transfer and Other High Frequency Applications

Efficient Power Conversion (EPC) Launches New eGaN FET Enabling Big Power in a Small Footprint at a low Price for Wireless Power Transfer and Other High Frequency Applications
New EPC2039 eGaN® FET offers superior performance, big power in an extremely small package at a very affordable price. EL SEGUNDO, Calif. — August 2015 — Efficient Power Conversion Corporation (EPC) announces the EPC2039 power transistor, a high power density enhancement-mode gallium nitride (eGaN®) device. The EPC2039 is an extremely small, 1.82 mm2, 80 VDS, 6.8 A power transistor with a maximum RDS(on) of 22 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance in power conversion systems due to its high switching capabilities ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating Over 2 MHz, Ideal for Class-D Audio

Efficient Power Conversion (EPC) Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating Over 2 MHz, Ideal for Class-D Audio
EPC2106 GaN power transistor offers power systems designers a solution that switches over 2 MHz resulting in no interference with the AM band, reducing costs for filtering, thus making it ideal for low distortion Class-D audio. EL SEGUNDO, Calif. — August 2015 — EPC announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, ... Read more
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Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors

Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors
eGaN®power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable high power density converters. EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150°C and pulsed currents capabilities of 260 A (150 V EPC2033) and 140 A (EPC2034). Applications include DC-DC converters, synchronous ... Read more
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IDT and EPC Collaborate to Integrate Gallium Nitride and Silicon for Faster, Higher Efficiency Semiconductor Devices

IDT and EPC Collaborate to Integrate Gallium Nitride and Silicon for Faster, Higher Efficiency Semiconductor Devices

Integrated Device Technology, Inc. (IDT®) (NASDAQ: IDTI) today announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency. Under their collaboration, the companies will explore integrating EPC’s eGaN® technology with leading IDT solutions.

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Efficient Power Conversion (EPC) Expands Wide Pitch eGaN FET Family Enabling High Current in Small Footprint

Efficient Power Conversion (EPC) Expands Wide Pitch eGaN FET Family Enabling High Current in Small Footprint
New eGaN® power transistors extend EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to ... Read more
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Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers

Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers
New family of eGaN power transistors offer superior performance, smaller size, and high reliability…at the price of a MOSFET. EL SEGUNDO, Calif.— April 2015 — Efficient Power Conversion Corporation (EPC) announces the 60 V EPC2035 and 100 V EPC2036 eGaN power transistors designed to compete in price, while outperforming silicon. Price, the last barrier to widespread adoption of GaN transistors as silicon MOSFET replacements, has fallen. These products demonstrate that gallium nitride can displace silicon semiconductors and drive the industry back onto the Moore’s Law growth curve. Read more
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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Point of Load Converter at 22 A Output

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Point of Load Converter at 22 A Output
With the new 100 V EPC2104 eGaN®half bridge, a system efficiency of a complete buck converter using the EPC2104 is greater than 97% at 22 A switching at 300 kHz, and approaching 97% at 22 A when switching at 500 kHz, achieved when converting from 48 V to 12 V. EL SEGUNDO, Calif. — April 2015 — EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the ... Read more
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Efficient Power Conversion (EPC) Introduces Wide Pitch eGaN FETs Enabling High Current in Small Footprint

Efficient Power Conversion (EPC) Introduces Wide Pitch eGaN FETs Enabling High Current in Small Footprint
New EPC2029 eGaN® power transistor extends EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines. EL SEGUNDO, Calif.—April 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of an eGaN FET designed with a wider pitch connection layout. The first in a new family of “Relaxed Pitch” devices, the EPC2029 80 V, 31 A eGaN FET features a 1 mm ball pitch. The wider pitch allows for ... Read more
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Efficient Power Conversion (EPC) Expands Family of Plug and Play DrGaNPLUS Evaluation Boards – High Power Converters in a Small Footprint

Efficient Power Conversion (EPC) Expands Family of Plug and Play DrGaNPLUS Evaluation Boards – High Power Converters in a Small Footprint
DrGaNPLUS EPC9201 30 V, 40 A and EPC9203 80 V, 20 A evaluation boards demonstrate the extreme size reduction and efficiency enhancement for power conversion that can be achieved using high frequency switching eGaN power transistors. EL SEGUNDO, Calif.— March 2015 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces the expansion of its portfolio of DrGaNPLUS evaluation boards. These boards are ... Read more
Categories: Press Releases
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