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500 Watt Eighth Brick DC-DC Converter Achieves 96.7% Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers Fully Regulated, Isolated Output 12 V, 42 A Output

500 Watt Eighth Brick DC-DC Converter Achieves 96.7% Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers Fully Regulated, Isolated Output 12 V, 42 A Output
EPC9115 DC-DC bus converter showcases superior performance achieved using eGaN FETS with designated drivers in a conventional fully regulated, isolated eighth brick DC-DC converter topology. EL SEGUNDO, Calif. — March 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9115, a demonstration design for a 12 V, 42 A output with an input range of 48 V to 60 V. The demonstration board features enhancement-mode (eGaN®) power transistors – the EPC2020 (60 V) and EPC2021 (80V) – along with the LM5113 half-bridge driver and UCC27611 low side driver from Texas Instruments. The ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Publishes Wireless Power Handbook, a Guide to Designing an Efficient Amplifier for a Wireless Power Transfer System

Efficient Power Conversion Corporation (EPC) Publishes Wireless Power Handbook, a Guide to Designing an Efficient Amplifier for a Wireless Power Transfer System
Wireless Power Handbook is a guide to designing an efficient amplifier for a wireless power transfer system, taking advantage of the superior performance of gallium nitride power transistors. EL SEGUNDO, Calif. – March 2015 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a practical engineering handbook designed to provide power system design engineers valuable experiences and points of reference critical to understanding and designing highly efficient wireless power systems using gallium nitride-based transistors. As a supplement to EPC’s GaN ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) to Demonstrate 500 W High Power Density GaN-based Eighth Brick DC-DC Converter at the 2015 Applied Power Electronics and Exposition Conference (APEC)

Efficient Power Conversion (EPC) to Demonstrate 500 W High Power Density GaN-based Eighth Brick DC-DC Converter at the 2015 Applied Power Electronics and Exposition Conference (APEC)

At the IEEE APEC 2015 power electronics industry conference, EPC applications experts will make eight technical presentations on GaN FET technology and applications showing the superiority of GaN transistors compared to silicon power MOSFETs.

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Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers High Quality Audio Performance in Space Saving Design

Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers High Quality Audio Performance in Space Saving Design

EPC9106 Class-D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.

EL SEGUNDO, Calif. — February 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 ohm Class-D audio amplifier.

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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion introduces the EPC2102, 60 V and EPC2103, 80 V half bridges, expanding its award winning family of gallium nitride power transistor products.

EL SEGUNDO, Calif. — January 2014 — EPC announces the EPC2102, 60 V and the , 80 V enhancement-mode monolithic GaN transistor half bridges.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications

Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications
EPC2027 eGaN® FET offers power systems designers a 450 V power transistor capable of 4ns rise times for high frequency DC-DC converters and medical diagnostic instruments. EL SEGUNDO, Calif. — January 2015 — EPC announces the EPC2027, a 450 V normally off (enhancement mode) power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by high voltage higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, solar power inverters, and LED ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation’s (EPC) Monolithic Half-Bridge eGaN Transistor Family Named Product of the Year by Electronic Products Magazine

Efficient Power Conversion Corporation’s (EPC) Monolithic Half-Bridge eGaN Transistor Family Named Product of the Year by Electronic Products Magazine
EPC2100 GaN power transistor single-chip half-bridge products honored with award for innovative advancement in discrete semiconductors. EL SEGUNDO, Calif — January 2015 — Efficient Power Conversion Corporation’s (EPC) enhancement-mode gallium nitride on silicon (eGaN®) monolithic half-bridge power transistor products have been honored with an Electronic Products’ Product of the Year award. The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2014. The ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling over 87% System Efficiency for a 28 V to 1 V Point of Load Converter at 14 A output.

The EPC2101 GaN power monolithic half bridge offers power systems designers a solution that increases efficiency and power density. For a complete buck converter, system efficiency approaches 87% at 14 A, and over 82% at 30 A when switching at 500 kHz and converting from 28 V to 1 V while reducing the board area occupied by transistors by 50% when compared to a discrete solution. EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, ... Read more
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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Half Bridge enabling 48 V to 12 V System Efficiency at 20 A output over 97%

EPC2105 GaN half bridge offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 98% at 10 A when switching at 300 kHz and converting from 48 V to 12 V, and 84% at 14 A when switching at 300 kHz and converting from 48 V to 1.0 V. EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Wide-Input, 20 Amp GaN-Based Buck Converter Demonstration Board for Telecom, Industrial, and Medical Applications

Efficient Power Conversion (EPC) Introduces Wide-Input, 20 Amp GaN-Based Buck Converter Demonstration Board for Telecom, Industrial, and Medical Applications
EPC9118 demonstrates size reduction and efficiency enhancement for power conversion readily achieved using high frequency switching eGaN® FETs for supply voltages up to 48 V or more. EL SEGUNDO, Calif.—October 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9118, a fully functional buck power conversion demonstration circuit. This board is a 30 V-60 V input to 5 V, 20 A maximum output current, 400 kHz buck converter. It features the EPC2001 and EPC2015 enhancement-mode (eGaN®) field effect transistors (FETs), as well as the LTC3891 buck ... Read more
Categories: Press Releases

Efficient Power Conversion Gallium Nitride (GaN) Experts Release Second Edition Textbook with Power Conversion Applications Focus

GaN Transistors for Efficient Power Conversion” textbook provides both theory and applications for gallium nitride transistors. EL SEGUNDO, CA – October 2014 – Efficient Power Conversion Corporation (EPC) announce the publication of the second edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons. This textbook is designed to provide power system design engineering students, as well as practicing engineers, basic technical and application-focused ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces 300 V Gallium Nitride Power Transistors for High Frequency Applications

EPC2025 GaN power transistor offers power systems designers a 300 V power transistor capable of 2ns rise times for high frequency DC-DC converters and medical diagnostic instruments. EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2025, a 300 V power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, power inverters, and LED lighting. The EPC2025 has a voltage ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling 12 V to 1.2 V Point of Load System Efficiency at 25 A output over 90%

EPC2100 GaN power transistor offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 93% at 10 A, and over 90.5% at 25 A when switching at 500 kHz and converting from 12 V to 1.2 V. EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2100, the first commercially available enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Experts Present Benchmark Performance with Gallium Nitride (GaN) Technology at the 2014 Darnell’s Energy Summit

EPC’s CEO and applications experts will conduct a half-day seminar and several technical presentations, including an invited plenary session presentation, on a multitude of applications enabled by this game-changing technology. EL SEGUNDO, Calif. — September 2014 — Efficient Power Conversion Corporation will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2014. The conference will be held in Richmond, Virginia from September 23th through the 25th. This summit combines efficient power ... Read more
Categories: Press Releases

IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”

On September 3rd IEEE PELS will offer a webinar by Dr. Johan Strydom discussing the contribution of gallium nitride power transistors to meet the demanding system bandwidth requirements of envelope tracking applications. EL SEGUNDO, Calif.— August 2014 — An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 AM (EDT). Discrete GaN power devices offer ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Experts Present Benchmark Performance with New Generation eGaN FETs at Key Power Industry Conferences in China

EPC to present latest generation eGaN technology at two industry-leading conferences in China – the 3rd Wireless Power World 2014 and IIC China Power Management and Power Semiconductor EL SEGUNDO, Calif. — August, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will deliver application-focused presentations at two industry tradeshows in China: The 3rd Wireless Power World 2014, Shanghai, China EPC experts will show how the superior characteristics of eGaN® ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Lends Support to “The Little Box Challenge” presented by Google and IEEE to Build a (Much) Smaller Power Inverter

eGaN® power transistors are available to help contestants in their design of extremely small power inverters in their attempt to win the “Little Box Challenge” presented by Google and IEEE, an open competition to build a (much) smaller power inverter. To tweet this news, copy and paste http://bit.ly/EPCLBC to your Twitter handle with #LittleBoxChallenge EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces its support for contestants in “Little Box Challenge” presented by Google and IEEE. Little Box Challenge, ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Complete A4WP Compliant High Efficiency Wireless Power Transfer Demonstration Kit Delivering 35 W and Operating at 6.78 MHz

Superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems. To tweet this news, copy and paste http://bit.ly/EPCWiPoPR to your Twitter handle with #GaNFET EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) today announces the immediate availability of a complete demonstration wireless power transfer kit. The 40 V (EPC9111) or 100 V (EPC9112) ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Widens the Performance Gap with the Aging Power MOSFET with “Off-the-Shelf” High Performance Gallium Nitride Power Transistors

eGaN® power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable power converters with greater than 98% efficiency. To tweet this news, copy and paste http://bit.ly/EPCXLPR1407 to your Twitter handle with #GaNFET EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces the introduction of six new-generation power transistor products and corresponding development boards. Ranging from 30 V to 200 V, these products provide ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces High Efficiency Wireless Power Transfer Demonstration System Operating at 6.78 MHz Featuring High Frequency Gallium Nitride (eGaN) FETs

The superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems. EL SEGUNDO, Calif.—June, 2014 — Efficient Power Conversion Corporation (EPC) today announce the introduction of demonstration boards for wireless power transfer in an innovative high performance topology; Zero Voltage Switching (ZVS) Class-D. The EPC9506 and EPC9507 amplifier (source) boards utilize the high ... Read more
Categories: Press Releases
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