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Efficient Power Conversion Corporation (EPC) Gallium Nitride Technology Receives EDN China 10th Anniversary Leading Technology Award

EPC enhancement-mode gallium nitride (eGaN®) power transistors recognized by leading industry trade journal as displacement technology for the venerable silicon MOSFET EL SEGUNDO, Calif. – June, 2012 – Efficient Power Conversion Corporation (www.epc-co.com) has been recognized with a EDN China 10th Anniversary Innovation Award for Leading Technology in the Most Influential Technology for the Future category. The EDN China Innovation Award is a benchmark for recognizing technology, product, and company innovation by the voting of electronics design engineers and managers ... Read more
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Dr. John Glaser Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Glaser will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems EL SEGUNDO, Calif.—June 2014 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. John Glaser has joined the EPC engineering team as Director, Applications Engineering. As a member of the EPC applications team, Dr. Glaser’s focus will be on designing lower loss and higher power density benchmark architectures and converters that demonstrate the benefits of using ... Read more
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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology for Benchmark Efficiency Wireless Energy Converters at 2014 PCIM Asia Conference

At PCIM Asia conference in Shanghai, China, an EPC applications expert will demonstrate the superiority of GaN transistors compared to silicon power MOSFETs in wireless energy transfer applications. EL SEGUNDO, Calif. — June, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting an application-focused presentation at PCIM Asia highlighting the efficiency advantage of using eGaN FETs in wireless power transfer. The conference will be held in Shanghai, China from ... Read more
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Efficient Power Conversion (EPC) Introduces Plug and Play 97% Efficient Half-Bridge Converter DrGaNPLUS Evaluation Board Featuring Gallium Nitride Transisto

DrGaNPLUS EPC9202 100 V, 10 A board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors EL SEGUNDO, Calif.— May 2014 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, Efficient Power Conversion Corporation (EPC) introduces DrGaNPLUS evaluation boards. These boards are proof-of-concept designs that integrate all necessary components of a half-bridge circuit into a single, extremely small ... Read more
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IEEE Power Electronics Society (PELS) Webinar, “GaN Transistors – Crushing Silicon in Wireless Energy Transfer”

On June 4 IEEE PELS will offer a webinar by Alex Lidow and Michael de Rooij discussing the contribution of eGaN® power transistors to increasing efficiency in wireless power transfer systems. EL SEGUNDO, Calif.— May 2014 — Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT). In this webinar eGaN FETs are compared with MOSFETs in highly resonant wireless energy transfer using class-E, ... Read more
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EPC to Present Gallium Nitride (GaN) Technology for Envelope Tracking Power Supplies, High Efficiency Wireless Power Transfer and High Frequency Buck Converters at the 2014 PCIM Europe Conference

At PCIM Europe conference, EPC’s CEO and applications experts will demonstrate the superiority of GaN transistors compared to silicon power MOSFETs in a wide variety of applications. EL SEGUNDO, Calif. — May, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting three application-focused technical presentations at PCIM Europe. The conference will be held in Nuremberg, Germany from May 20th through the 22th. Participants attending EPC sessions will learn about ... Read more
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Efficient Power Conversion Corporation (EPC) Accelerates Learning Curve for Power System Design Engineers with Launch of Video Podcast Series on Gallium Nitride (GaN) Power Transistors

Produced by industry experts, EPC has posted an eleven-part educational video podcast series on the theory, design basics and applications for gallium nitride power transistors. EL SEGUNDO, Calif. – April 2014 - Efficient Power Conversion Corporation (www.epc-co.com) has created and posted on line an eleven-part educational video podcast series designed to provide power system design engineers a technical foundation and application-focused toolset on how to design more efficient power conversion systems using gallium nitride-based transistors. Beyond giving an overview of the ... Read more
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Efficient Power Conversion (EPC) Introduces Development Board for High Current, High Step-Down Buck Converter Applications

EPC9016 development board features 40 V, 33 A enhancement mode gallium nitride (eGaN®) FETs in parallel operation increasing current capability by 67% and optimum layout techniques maximize efficiency. EL SEGUNDO, Calif.— April, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9016 half-bridge development board for high current, high step-down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low-side (synchronous rectifier) field effect transistors (FETs) are connected in parallel since they will be ... Read more
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Efficient Power Conversion (EPC) to Present DC-DC Converter Using eGaN® Transistors Operating at 10 MHz with 89% Peak Efficiency and the Ability to Operate in Harsh Environmental Conditions at GOMACTe

Alex Lidow, EPC CEO and co-founder, will be presenting results of a newly released family of enhancement mode (GaN®) HEMT transistors designed for high frequency operation into the 10 MHz range. The presentation will also highlight the stability of these devices under radiation exposure making them an ideal choice for high reliability applications. EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting at the 39th Annual Government ... Read more
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Efficient Power Conversion (EPC) Experts to Demonstrate How eGaN FETs Increase Efficiency by 20% in Wireless Power Applications at Key Power Industry Conferences in Asia

EPC experts will be making technical presentations on GaN FET technology at three industry-leading conferences in Asia – Electronica China, IIC China Power Management and Semiconductor and International Workshop on Wide Band Gap Power Electronics 2014 in Taiwan EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be making presentations at three industry-leading power conferences in Asia. At two conferences in Shanghai, China on March ... Read more
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Efficient Power Conversion (EPC) Introduces Development Boards With Switching Transition Speeds in the Sub-Nanosecond Range and Capable of Hard-Switching Applications Above 10 MHz

Development boards in half-bridge topology with onboard gate drives simplify evaluation of the EPC8000 family of ultra high frequency, high performance eGaN® FETs now available from EPC. EL SEGUNDO, Calif.— March 2014 — Efficient Power Conversion Corporation (EPC) introduces a family of development boards, the EPC9022 through EPC9030, to simplify evaluation of the groundbreaking EPC8000 family of ultra high frequency eGaN power transistors. The EPC8000 family of high frequency eGaN FETs has switching transition speeds in the sub-nanosecond range, making them capable ... Read more
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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology for High Frequency Resonant and Envelope Tracking Power Supplies at the 2014 Applied Power Electronics and Exposition Confe

At the IEEE APEC 2014 power electronics industry conference, EPC applications experts will make technical presentations on GaN FET technology and applications showing the superiority of GaN transistors compared to silicon power MOSFETs. EL SEGUNDO, Calif. — February, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting three application-focused technical presentations at APEC 2014. Participants will learn about high frequency resonant converter, and high-frequency, ... Read more
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Efficient Power Conversion Corporation (EPC) Expands High Frequency eGaN® Power Transistor Family Capable of Amplification into the Multiple GHz Range

EPC8010 100 V gallium nitride FET is optimized for high frequency applications with positive gain into the 3 GHz range. EL SEGUNDO, Calif. – January 2014 – Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS. Optimized for high speed switching, the EPC8010 has a maximum RDS(on) of 160 milliohms and input gate charge in the hundreds of ... Read more
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Efficient Power Conversion (EPC) Introduces High Current Development Board Featuring Multiple Half-Bridges in Parallel

EPC9013 development board features 100 V eGaN FETs with a 35 A maximum output current using four half-bridge configuration in parallel and a single onboard gate drive. EL SEGUNDO, Calif.—February, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9013 development board featuring the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current in Buck mode using a four half-bridge configuration in parallel and a single onboard gate drive. This innovative design increases output power without ... Read more
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Andrea Mirenda Joins Efficient Power Conversion (EPC) as Vice President of Sales for the Americas

Ms. Mirenda to direct EPC’s sales organization in the Americas and assist customers in adopting eGaN® FETs for high frequency, high performance power conversion systems EL SEGUNDO, Calif.—January 2014 — Efficient Power Conversion Corporation (EPC) is proud to announce that Andrea Mirenda has joined the EPC leadership team as vice president, Americas sales. Ms. Mirenda has over 25 years of marketing and sales operation experience within the semiconductor industry. Her primary responsibilities at EPC are creating and implementing sales strategies to achieve the ... Read more
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Efficient Power Conversion Corporation (EPC) Now Included in National Instruments Multisim 13.0 Enhanced SPICE Circuit Simulation and Design Software

EPC component models have been included in National Instruments’ Multisim 13.0, which is now available to thousands of engineers to improve power system efficiency, reduce final product size, reduce development cost in their power conversion system designs. EL SEGUNDO, Calif. — December 2013 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that its enhancement mode gallium nitride transistors (eGaN® FETs) SPICE models have been included in the latest version of National ... Read more
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Efficient Power Conversion Corporation (EPC) Market Leading eGaN® Power Transistors Recognized as EDN Magazine Hot 100 Product for 2013

EPC8000 family of gallium nitride FETs give power systems and RF designers access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon. EL SEGUNDO, Calif. — December 2013 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that its EPC8000 family of high frequency eGaN FETs has been recognized with inclusion in the EDN list of 100 Hot Products for 2013. “We are very excited that EDN, an ... Read more
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Efficient Power Conversion Corporation (EPC) Market-leading Development Board Featuring eGaN® FETs Receives Industry Awards in China

Award winning EPC9005 development board facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 eGaN FET EL SEGUNDO, Calif. – November 2013 - Efficient Power Conversion Corporation (www.epc-co.com; www.epc-co.com.cn) announces that its EPC9005 development board has been recognized with two industry awards in China; namely, Optimized Development Award of the Top 10 Power Products Award 2013 presented by Electronics Product China and Leading Product Award of China Innovation Award 2013 presented by EDN China magazine. “It is ... Read more
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Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN® FETs Delivers High Quality Audio Performance in Space Saving Design

EPC9106 Class D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound. EL SEGUNDO, Calif. — November 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 Ω Class D audio amplifier. This demonstration board uses a Bridge-Tied-Load (BTL) design, composed of four ground-referenced half-bridge output stages, which allows scalability and expandability ... Read more
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Efficient Power Conversion (EPC) Introduces Family of Commercial High-Lead Enhancement Mode Gallium Nitride (eGaN®) FETs

Commercial high-lead versions of EPC’s popular enhancement mode gallium nitride (eGaN) FETs, the EPC2801, EPC2815, and EPC2818, are now available. EL SEGUNDO, Calif. — October 2013 — (www.epc-co.com) Efficient Power Conversion Corporation (EPC) introduces devices with a high-lead solder termination ideal for applications requiring higher temperature solder. The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% lead, 5% tin) solder terminations. The EPC2801 is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate. The EPC2815 ... Read more
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