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Efficient Power Conversion (EPC) Introduces Development Board Showcasing 100 V Enhancement Mode Gallium Nitride (eGaN®) FETs in Parallel for High Current Applications

EPC9017 development board features eGaN FETs in parallel operation using optimum layout techniques to increase current capability and efficiency. EL SEGUNDO, Calif.— October, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9017 half bridge development board for high current, high step down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low side (synchronous rectifier) FETs are connected in parallel since they will be conducting for a much longer period compared to the single high side (Control) FET. ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Blurs the Line Between Power and RF Transistors with Family of Gallium Nitride Transistors Capable of Amplification into the Multiple GHz Range

Power systems and RF designers now have access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon. EL SEGUNDO, Calif. — September 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products. Cutting new ground for power transistors, these third generation devices have switching transition speeds in ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN FET Family with 150 Volt Power Transistor

EPC2018 gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion and Class D Audio applications. EL SEGUNDO, Calif. – September 2013 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2018 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors. The EPC2018 is a 5.76 mm2, 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching ... Read more
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Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with 100 Volt, 16 milliohm Power Transistor

EPC2016 gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion. EL SEGUNDO, Calif. – September, 2013- Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2016 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors. The EPC2016 is a 3.36 mm2, 100 VDS, 11 A device with a maximum RDS(on) of 16 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Darnell’s Energy Summit

EPC CEO and applications experts will conduct a half-day seminar and technical presentations including an invited plenary session presentation on GaN FET technology and applications. EL SEGUNDO, Calif. — August, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2013. The conference will be held in Dallas, Texas from September 9th through the 12th. This ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces 96% Efficient, 1 MHz Buck Converter Demonstration Board Featuring eGaN FETs

EPC9107 demonstrates size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN power transistors EL SEGUNDO, Calif.—June, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9107, a fully functional buck power conversion demonstration circuit.  This board is a 9 V-28 V input to 3.3 V, 15 A maximum output current, 1MHz buck converter.  It uses the EPC2015< eGaN FET in conjunction with the LM5113 100V half-bridge gate driver from Texas Instruments. The EPC9107 demonstrates the reduced size and ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) CEO to Author Gallium Nitride Technology Monthly Column on eeWeb.com

Alex Lidow to author a monthly column in eeWeb.com entitled “How to GaN,” addressing a range of technical issues related to gallium nitride (GaN) technology including its application in power conversion and management. EL SEGUNDO, Calif.—June 2013— Efficient Power Conversion Corporation proudly announces that beginning in June, Alex Lidow, EPC co-founder and CEO, will author a monthly column on the online website eeWeb.com, a leading website for electrical engineers. The column, “How to GaN,” will begin with discussions on the basic principles of ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Opens GaN Power Library

Designers using state-of-the-art GaN transistors for power conversion can for the first time go to one place to find a concentration of articles, videos, and textbooks that reduce the time it takes to get their products to market. EL SEGUNDO, Calif.—May 2013— Efficient Power Conversion Corporation (EPC) announces the redesign of the EPC website, epc-co.com, to include a gallium nitride transistor library. The redesign provides search and access to a trove of GaN transistor technology educational materials and product information. Directly from the home page, power design ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Announces Upgrade of Development Board Featuring Enhancement Mode Gallium Nitride (eGaN) FETs Using Dedicated GaN FET Gate Driver from Texas Instruments

EPC9005 demonstrates the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials. EL SEGUNDO, Calif.—April 2013— Efficient Power Conversion Corporation (EPC) today announces the availability of the EPC9005 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective. The EPC9005 ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board Featuring 100 V Enhancement Mode Gallium Nitride (eGaN) FETs

EPC9010 development board features dedicated eGaN driver to facilitate rapid design of high frequency switching power conversion systems using the 100 V EPC2016 eGaN FET EL SEGUNDO, Calif.— February, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency ... Read more
Categories: Press Releases

EPC named a Constant Contact 2012 All Star

EPC is honored to be recognized as a 2012 All Star by Constant Contact. This status is an annual designation that only 10% of Constant Contact customers achieve. It is awarded to companies making extra efforts to engage customers. We would like to thank all who have supported us. If you are not already receiving our newsletter please join our list @ http://bit.ly/qr28tu

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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Applied Power Electronics And Exposition Conference (APEC®)

EPC CEO and applications experts will conduct a half-day seminar and technical presentations on GaN FET technology and applications at the IEEE APEC 2013 power electronics industry conference. EL SEGUNDO, Calif. — February, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at APEC 2013. The conference will be held in Long Beach, California from March 17th through the 21st. Read more
Categories: Press Releases

Efficient Power Conversion Development Board Demonstrates Ease of Designing Power Systems with 200 V eGaN FETs

EPC9004 features eGaN® FETs in combination with dedicated GaN FET gate driver from Texas Instruments EL SEGUNDO, Calif.—February 2013 — Efficient Power Conversion Corporation (EPC) today announced the availability of the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how recently introduced IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective. The EPC9004 ... Read more
Categories: Press Releases

EPC Wireless Power Transfer Demonstration System named a Top 10 Wireless Charging Development for 2012 by PowerPulse.Net

Wireless charging will be a fast-growing segment of the power electronics industry in 2013. Significant developments began accelerating last year. The “Top 10” developments selected by the PowerPulse editors highlight important trends in wireless charging that will continue in 2013 and beyond. EPC announced a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN® FETs from EPC are well suited for these systems because of their ability to operate efficiently at high frequency, voltage, ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) and EE Times Taiwan Announce New Design Contest

Innovations are engineers’ intellectual properties. To promote and support engineers’ innovative designs with gallium nitride FETs, EE Times Taiwan and Efficient Conversion Corporation join hands in staging the “GaN Transistors for Efficient Power Conversion – Design Contest”. The aim is to provide an exchange platform for participating engineers to use ANY EPC’s eGaN FETs in designing: a. a DC-DC power conversion solution OR b. Class D or Class E audio solution Any participant can submit their own or their teams’ design solution in ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Publishes Chinese Edition of Gallium Nitride (GaN) Transistor Textbook

Written by industry experts, “GaN Transistors for Efficient Power Conversion” provides both theory and applications for gallium nitride transistors EL SEGUNDO, Calif. – November 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a Simplified Chinese edition of its gallium nitride transistor textbook, “GaN Transistors for Efficient Power Conversion”. This textbook provides power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives EDN China Innovation Leading Product Award 2012

SEGUNDO, Calif. – November, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that it has been recognized with a Leading Product Award by EDN China Innovation Award 2012 in its Power Device and Module category. In its eighth year, the EDN China Innovation Award 2012 is the benchmark event for recognizing product innovation by the voting of electronics design engineers and managers worldwide. “It is an honor to receive this recognition as an industry leading product from EDN China magazine. The EPC2012 is one member of our family of eGaN FETs being ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Announces Upgrade of Development Boards Featuring Enhancement Mode Gallium Nitride (eGaN) FETs Using Dedicated GaN FET Gate Drivers from Texas Instruments

EPC9003 and EPC9006 demonstrate the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials. EL SEGUNDO, Calif.—October, 2012 — Efficient Power Conversion Corporation (EPC) today announces the availability of two development boards, the EPC9003 and the EPC9006, both featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). These boards demonstrate how the recent introductions of IC gate drivers, optimized for eGaN FETs, make the task of transitioning from ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Named to EE Times Silicon 60 List of Emerging New Technology Startups

EL SEGUNDO, Calif. – October, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership. “It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics ... Read more
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