Join EPC at PCIM Europe 2018

Join EPC at the upcoming PCIM Europe 2018 Conference on June 5-7 in Nuremberg Germany

Join EPC at the upcoming PCIM Europe 2018 Conference on June 5-7 in Nuremberg and see eGaN FETs and ICs improving applications such as DC-DC power conversion, motor control, LiDAR for autonomous vehicles, and wireless power.

PCIM Europe 2018
Date: June 5 - 7, 2018
Location: Nuremberg, Germany
Hall: #7, Booth: #539

GaN LiDAR Autonomous Vehicles
DC-DC power data center
Motor Drives
Large Surface Area Wireless Power

To meet with the EPC team during PCIM request a meeting online

What EPC will be talking about at PCIM Europe 2018:

  • High Power Nanosecond Pulse Laser Driver using an eGaN® FETs
    Presenter: John Glaser
    Lidar time-of-flight distance measurement has become the primary means of high-speed, accurate mapping of 3-D space. It has uses in diverse applications from surveying to real-time autonomous vehicle navigation. A key lidar subsystem is the pulsed laser transmitter, which must generate high power optical pulses with duration < 10 ns. This work describes a laser driver using commercial GaN FETs to achieve a high power, high speed pulse laser driver capable of operating from an 80 V bus, and can generate current pulses into a laser diode of 60 A peak current with a 5 ns duration.
  • GaN Based Multilevel Intermediate Bus Converter for 48 V Server Applications
    Authors: David Reusch, Suvankar Biswas
    With the power architecture transition from a 12 V to 48 V rack in modern data centers there is an increased interest in improving 48 V power conversion efficiency and power density. In this paper, we will explore system optimization of 48 V to 12 V non-isolated, fully regulated, intermediate bus converters (IBC) to maximize efficiency and power density. A GaN-based three level converter provides a 50% reduction in inductor volume and a 25% reduction in converter power loss.
  • High Performance Thermal Solution for High Power GaN FET Based Power Converters
    Authors: Michael de Rooij, Yuanzhe Zhang, David Reusch
    Higher power density GaN FETs have traditionally relied on cooling from junction-to-board into the PCB. This paper explores a thermal cooling method suitable for eGaN FETs that eliminates mechanical stresses during assembly and yields excellent thermal performance using a liquid thermal interface material. A 140 V to 28 V Buck converter, capable of delivering 34 A (1kW) was designed and built. Tests were performed using forced air cooling on the PCB and repeated with the proposed thermal solution that resulted in more than a 4x increase in output current capability.
  • 6.78 MHz Multi Amplifier and Transmit Coil eGaN FET based Class-E Wireless Power System Evaluation
    In this paper, high output impedance eGaN FETs based class E amplifiers are investigated for suitability in coupled transmit coil wireless power systems. Experimental results show evidence that high output impedance class E amplifiers are inherently isolated from each other in this configuration and therefore also balance load sharing for receivers that straddle across two or more coils. Furthermore, only eGaN FET based class E amplifiers can simultaneously achieve high efficiency and high output impedance making them ideal for this application.

To meet with the EPC team during PCIM Europe 2018 request a meeting online