Frequently Asked Questions

eGaN® Reliability

We have MTTF (Mean Time to Fail) Published in Reliability Report Phase 9. As of Phase report 9, a combined total of over nine million device-hours have been accumulated with zero failures. Please refer to the eGaN FET Reliability page for this and all other reliability testing reports.

ESD tests were performed per JEDEC and EIA standards for HBM and Machine Model (MM) respectively. On HBM these devices meet Class 3A or higher and for MM Class C. HBM ESD level can be found in Reliability Report Phase 9.

After 30 years of study, silicon MOSFET degradation mechanisms are well understood and therefore the failure rates can be estimated at various operating conditions. The structure of EPC's eGaN® FETs is significantly different from MOSFETs, and therefore the degradation mechanisms are quite different. Since eGaN technology employs a new type of semiconductor material, acceleration factors used for silicon may not be applicable. EPC has been publishing reliability reports on a regular basis that give the user more and more detail, and at higher statistical confidence levels. All of these reports can be found on the eGaN FET Reliability page. We will continue to use this publication to present data on failure mechanisms as they emerge from our testing.

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