Frequently Asked Questions

eGaN® Technology

eGaN transistors are very similar to lateral FETs (Field Effect Transistors) made in silicon. Please refer to the application note Fundamentals of Gallium Nitride Power Transistorsfor a general discussion of the devices and technology.

The following videos also cover the basics of GaN:
How To GaN 01: Introduction – Material Compositions
How to GaN 02: Introduction – Performance Characteristics

Scanning electron micrograph cross section of an eGaN FET
EPC's GaN Power Transistor Structure

Scanning electron micrograph cross section of an eGaN FET

First launched in 2010, eGaN FETs are already in their fifth generation and we are just getting started with this remarkable new technology. EPC is working to make eGaN FETs higher performance, easier to use, and lower cost than the aging power MOSFET. To stay informed of the latest developments, join our mailing list and follow us on social media.

EPC offers several tools to help simplify the evaluation process of EPC’s eGaN FETs and ICs We have development boards available which include all the critical components on a single board that can be easily connected into any existing system. The boards contain all the critical components and layout for optimal switching performance, including a gate drive circuit, an on-board gate drive supply, and bypass capacitors.

The list of available development boards and supporting documentation is growing and can be found on the Demo Boards product page.

EPC also provides P-SPICE, T-SPICE, LT-SPICE, and Spectre models for all devices on the Design Support page. Our experience has shown that the device models portray an extremely accurate representation of actual device performance. The results of our testing can be found in application note Circuit Simulation Using EPC Device Models.

For the engineer able to deploy the time and resources necessary to assemble EPC’s transistors directly onto a PCB, read our application note Assembling eGaN FETs and ICs.

Quick references to Die Attach and Detach are also available, along with video demonstrations on the Assembly Resources page.

Beyond just performance and cost improvement, the greatest opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. GaN technology, as opposed to common silicon IC technology, will allow designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way.

Today, the most common building block used in power conversion is the half bridge. In 2014, EPC introduced a family of integrated half bridge devices which became the starting point for the journey towards a power system-on-a-chip. This trend was expanded with the introduction of the EPC2107 and EPC2108 which integrated half bridges with integrated synchronous bootstrap. In 2018 we further continued the integration path with the introduction of eGaN ICs combining gate drivers with high frequency GaN FETs in a single chip for improved efficiency, reduced size, and lower cost. These devices can be found in our product selector guide.

The voltage range of EPC’s current product offering is 15V – 200V. EPC plans to expand our product line to include higher voltage products. At that point, EPC eGaN®FETs will cover 90% of the applications currently served by the existing power MOSFET market. For the latest on new product development sign up to receive news and product updates from EPC or by texting "EPC" to 22828.

We believe the technology is very capable of much higher blocking voltages; due to the nature of its high electron mobility, eGaN devices can be designed for high voltages with much less impact on RDS(ON) than silicon. Additionally, as a small device, the capacitances are much lower than those of trench MOSFETs per area allowing very high switching speeds. The result is a device that can provide the high blocking voltage requirement with little penalty on RDS(ON) and speed. We do not currently have products beyond 600V on our roadmap. For the latest on new product development sign up to receive news and product updates from EPC or by texting "EPC" to 22828.

Enhancement mode and depletion mode n-channel GaN devices are available on the market today. EPC supplies only enhancement mode n-channel devices at the present time. Whereas it is possible to make a p-channel device, the performance is quite poor compared with silicon. For the latest on new product development sign up to receive news and product updates from EPC or by texting "EPC" to 22828.

EPC is developing IC technology based on our eGaN technologyplatform. The integration of signal level components with power GaN transistors could enable one of the most significant changes in semiconductor history! For the latest on new product development sign up to receive news and product updates from EPC or by texting "EPC" to 22828.

EPC’s quality management system is ISO 9001:2015 qualified. EPC partners with world-class ISO/TS 16949 and ISO 9001 certified wafer fabrication and assembly suppliers and EPC contracts with Digi-Key Corporation, an ISO 9001 certified organization, for the global distribution of our products. Please visit the Quality and Environmental page for more information on EPC’s Quality and Environmental programs.

We do not currently have plans to release discrete GaN diodes. It should be noted that the current eGaN FETs can be made to act as a diode; there is no physical diode that bypasses the switch in the reverse direction, however, when current is forced from source to drain, the drain voltage falls to the point where it begins to turn the channel on, acting just like a diode. As no minority carriers are present, these devices have no reverse recovery.

For the latest on new product development sign up to receive news and product updates from EPC or by texting "EPC" to 22828.

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