GaN Talk a blog dedicated to crushing silicon
Term: Medtech
7 post(s) found

eGaN® FETs and ICs Bring Precision Control to Surgical Robots

eGaN® FETs and ICs Bring Precision Control to Surgical Robots
Nov 14 2018

Minimal invasive surgery using surgical robots gives unprecedented control to surgeons looking to achieve the next level of precision, thereby reducing risk and trauma to the patient and speeding recovery. Many motors are required to control the various robotic appendages, such as arms, joints, and tool control, that give the surgical robot the required degrees of freedom (DOF) and dexterity to perform extremely delicate tasks. Weight and size of motor control circuitry are thus important factors in the design of such robots as they directly impact the size of the motor that manipulates the robot’s appendages during surgery.

The motor of choice for robotic surgery is the 3-phase brushless DC (BLDC) motor These motors are compact for their power rating, can be precisely controlled, offer high electro-mechanical efficiency, and can operate with minimal vibration when properly controlled. The choice of motor voltage lies in the range of 24 V to 48 V with balancing power conductor thickness and weight with insulation thickness and stiffness for optimum performance and dexterity being the determining factors.

See, Learn, and Discuss eGaN Technology at CES 2017

See, Learn, and Discuss eGaN Technology at CES 2017
Dec 04 2016

Every year in January 2017, the world’s consumer electronics community gathers in Las Vegas at the Consumer Electronics Show (CES) to see, learn and discuss the latest innovations and products available in the world of electronics.

More than 3,800 exhibitors spread out across 2.47 million net square feet of exhibit space, is the location where over 170,000 industry professionals, 50,000 outside of the U.S. wander, ogle, and “play with” the latest electronic devices.

My Predictions for 2017

My Predictions for 2017
Nov 11 2016

In January of 2016 I made several predictions for the then-nascent year. Predictions were made for new markets such as wireless charging, augmented reality, autonomous vehicles, and advances in medical diagnostics and internet access. Progress in these markets was made on all fronts, sometimes faster and sometimes slower than anticipated. So here we are about to start a new year and, perhaps foolishly I am ready once again to predict the future.

Emerging Applications in Medical Care Using GaN Technology

Emerging Applications in Medical Care Using GaN Technology
Jun 28 2016

The contribution that gallium nitride semiconductor technology is making in medical applications can be measured not only in dollars saved, but also more importantly in its contribution to the speed of intervention, diagnostic accuracy and patient comfort. Because of its superior performance and small size, GaN components (FETs and ICs) are enabling end applications such as wireless power charging, higher resolution diagnostics, and precision surgical robotics. These applications are improving ways health care is being provided.

Six Reasons to Rethink Power Semiconductor Packaging

Six Reasons to Rethink Power Semiconductor Packaging
Jun 08 2016

In my 40 years’ experience in power semiconductors I have visited thousands of customers, big and small, on every continent except Antarctica. When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

  1. Can you make the package smaller?
  2. Can you reduce the package inductance?
  3. Can you make the product with lower conduction losses?
  4. Can you make the package more thermally efficient?
  5. Can you sell the product at a lower price?
  6. Can you make the package more reliable?

eGaN® FETs and integrated circuits from EPC have taken a very different approach to packaging power semiconductors – we have ditched the package altogether!

Revisiting What It Takes for a New Semiconductor Technology to be Disruptive

Revisiting What It Takes for a New Semiconductor Technology to be Disruptive
Jun 02 2016

In March 2010 Efficient Power Conversion (EPC) proudly launched our GaN technology at the CIPS conference in Nuremberg, Germany.  Parts and development kits were readily available off-the shelf and therefore designers could immediately get started with a new state-of-the-art semiconductor technology.

At that time, we listed four key attributes we believed a new semiconductor technology needed in order to be really disruptive to the end markets.  A lot has happened in the six years since.  GaN has continued to ascend as the presumptive replacement for the aging power MOSFET, yet there are still a few design engineers and technical managers that remain skeptical.  So let’s look again at these four key attributes and see where GaN stands in addressing them.