GaN Talk a blog dedicated to crushing silicon
Term: DC-DC Converter
5 post(s) found

How to Get More Power Out of a High-Density eGaN®-Based Converter with a Heatsink

How to Get More Power Out of a High-Density eGaN®-Based Converter with a Heatsink
Dec 14 2018

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN also offers six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This application note presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

How to Design an eGaN FET-Based Power Stage with an Optimal Layout

How to Design an eGaN FET-Based Power Stage with an Optimal Layout
Oct 24 2018

Motivation

eGaN FETs are capable of switching much faster than Si MOSFETs, requiring more careful consideration of PCB layout design to minimize parasitic inductances. Parasitic inductances cause higher overshoot voltages and slower switching transitions. This application note reviews the key steps to design an optimal power stage layout with eGaN FETs, to avoid these unwanted effects and maximize the converter performance.

Impact of parasitic inductance on switching behavior

As shown in figure 1, three parasitic inductances can limit switching performance 1) power loop inductance (Lloop), 2) gate loop inductance (Lg), and 3) common-source inductance (Ls). The chip-scale package of eGaN FETs eliminates any significant inductance within the transistor itself, leaving the printed circuit board (PCB) as the main contributor. Each parasitic inductance is a consequence of the total area encompassed by the dynamic current path and its return loop. (See WP009: Impact of Parasitics on Performance).

APEC 2018: GaN Revolution in the World of Power Electronics

APEC 2018: GaN Revolution in the World of Power Electronics
Feb 28 2018

Come see the world’s smallest, most efficient, and lowest cost DC-DC converters!  eGaN technology makes this, and much more possible and will be on full display at this year’s American Power Engineering Conference, APEC, where power engineers from around the world gather to see and learn about the latest innovations and products available in the world of power electronics.

EPC GaN experts will be presenting a half-day educational seminar on the state of GaN technology and its application to leading-edge power electronics. In addition, EPC will deliver six technical sessions, as well as demonstrate eGaN applications in our booth and customer suite.

48V-to-1V Conversion – the Rebirth of Direct-to-Chip Power

48V-to-1V Conversion – the Rebirth of Direct-to-Chip Power
Jul 28 2017

This post was originally published May 26, 2017 on the PowerPulse.net web site . Learn more about eGaN technology and EPC GaN solutions for 48 V to Point-of-Load.

During last week’s PCIM Europe event in Nuremberg, Germany, direct 48V-to-1V power conversion architectures were a significant topic, mostly outside of the exhibit floor. Vicor was quietly showing its latest generation of 48V direct-to-chip power components. Ericsson Power Modules and Efficient Power Conversion were holding invitation-only meetings where future designs of 48V direct to load power conversion architectures were the focus of the discussions. By the end of 2017, several vendors are expected to be offering dc-dc converters delivering 48V-to-1V direct conversion.

Rethinking Server Power Architecture in a Post-Silicon World: Getting from 48 Vin – 1 Vout Directly

Rethinking Server Power Architecture in a Post-Silicon World: Getting from 48 Vin – 1 Vout  Directly
Jul 26 2016

The demand by our society for information is growing at an unprecedented rate. With emerging technologies, such as cloud computing and the internet of things (IoT), this trend for more and faster access to information is showing no signs of slowing. What makes the transfer of information at high rates of speed possible are racks and racks of servers, mostly located in centralized data centers.